Data on lateral photocurrent along a Cu(In,Ga)Se2 thin film as a function of air exposure time
Wavelength-dependent (i.e. penetration-depth-dependent) lateral photocurrent (iLP) measurement has been used to extract depth-resolved Lc profiles, where Lc is the minority carrier collection length by diffusion. The extracted Lc depth-profiles can be used to determine the minority carrier diffusion...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2019-12-01
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| Series: | Data in Brief |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2352340919310236 |
| _version_ | 1818947165639147520 |
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| author | Jiseong Jang Sangyeob Lee Choong-Heui Chung |
| author_facet | Jiseong Jang Sangyeob Lee Choong-Heui Chung |
| author_sort | Jiseong Jang |
| collection | DOAJ |
| description | Wavelength-dependent (i.e. penetration-depth-dependent) lateral photocurrent (iLP) measurement has been used to extract depth-resolved Lc profiles, where Lc is the minority carrier collection length by diffusion. The extracted Lc depth-profiles can be used to determine the minority carrier diffusion length and back-surface recombination velocity in Cu(In,Ga)Se2 (CIGS) thin film solar cells (Chung, 2019). During the measurement of iLP, the CIGS thin film is generally exposed to air. The CIGS thin films can be degraded by air exposure (Metzger et al., 2009). Therefore, it will be helpful to know the effect of air exposure time of CIGS thin films on the iLP values to properly estimate the electrical quality of CIGS thin films. Keywords: Lateral photocurrent, Minority carrier diffusion length, Back-surface recombination velocity, Solar cells, CIGS |
| first_indexed | 2024-12-20T08:26:34Z |
| format | Article |
| id | doaj.art-79aceecf53bf4dfab3733dad6ce76c4e |
| institution | Directory Open Access Journal |
| issn | 2352-3409 |
| language | English |
| last_indexed | 2024-12-20T08:26:34Z |
| publishDate | 2019-12-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Data in Brief |
| spelling | doaj.art-79aceecf53bf4dfab3733dad6ce76c4e2022-12-21T19:46:48ZengElsevierData in Brief2352-34092019-12-0127Data on lateral photocurrent along a Cu(In,Ga)Se2 thin film as a function of air exposure timeJiseong Jang0Sangyeob Lee1Choong-Heui Chung2Department of Materials and Manufacturing Engineering, Hanbat National University, Daejeon, 34158, Republic of KoreaDepartment of Materials and Manufacturing Engineering, Hanbat National University, Daejeon, 34158, Republic of Korea; Department of Materials Science and Engineering, Hanbat National University, Daejeon, 34158, Republic of KoreaDepartment of Materials and Manufacturing Engineering, Hanbat National University, Daejeon, 34158, Republic of Korea; Department of Materials Science and Engineering, Hanbat National University, Daejeon, 34158, Republic of Korea; Corresponding author. Department of Materials and Manufacturing Engineering, Hanbat National University, Daejeon, 34158, Republic of Korea.Wavelength-dependent (i.e. penetration-depth-dependent) lateral photocurrent (iLP) measurement has been used to extract depth-resolved Lc profiles, where Lc is the minority carrier collection length by diffusion. The extracted Lc depth-profiles can be used to determine the minority carrier diffusion length and back-surface recombination velocity in Cu(In,Ga)Se2 (CIGS) thin film solar cells (Chung, 2019). During the measurement of iLP, the CIGS thin film is generally exposed to air. The CIGS thin films can be degraded by air exposure (Metzger et al., 2009). Therefore, it will be helpful to know the effect of air exposure time of CIGS thin films on the iLP values to properly estimate the electrical quality of CIGS thin films. Keywords: Lateral photocurrent, Minority carrier diffusion length, Back-surface recombination velocity, Solar cells, CIGShttp://www.sciencedirect.com/science/article/pii/S2352340919310236 |
| spellingShingle | Jiseong Jang Sangyeob Lee Choong-Heui Chung Data on lateral photocurrent along a Cu(In,Ga)Se2 thin film as a function of air exposure time Data in Brief |
| title | Data on lateral photocurrent along a Cu(In,Ga)Se2 thin film as a function of air exposure time |
| title_full | Data on lateral photocurrent along a Cu(In,Ga)Se2 thin film as a function of air exposure time |
| title_fullStr | Data on lateral photocurrent along a Cu(In,Ga)Se2 thin film as a function of air exposure time |
| title_full_unstemmed | Data on lateral photocurrent along a Cu(In,Ga)Se2 thin film as a function of air exposure time |
| title_short | Data on lateral photocurrent along a Cu(In,Ga)Se2 thin film as a function of air exposure time |
| title_sort | data on lateral photocurrent along a cu in ga se2 thin film as a function of air exposure time |
| url | http://www.sciencedirect.com/science/article/pii/S2352340919310236 |
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