The effect of atmospheric doping on pressure-dependent Raman scattering in supported graphene

Atmospheric doping of supported graphene was investigated by Raman scattering under different pressures. Various Raman spectra parameters were found to depend on the pressure and the substrate material. The results are interpreted in terms of atmospheric adsorption leading to a change in graphene ch...

Full description

Bibliographic Details
Main Authors: Egor A. Kolesov, Mikhail S. Tivanov, Olga V. Korolik, Olesya O. Kapitanova, Xiao Fu, Hak Dong Cho, Tae Won Kang, Gennady N Panin
Format: Article
Language:English
Published: Beilstein-Institut 2018-02-01
Series:Beilstein Journal of Nanotechnology
Subjects:
Online Access:https://doi.org/10.3762/bjnano.9.65
_version_ 1819014406646792192
author Egor A. Kolesov
Mikhail S. Tivanov
Olga V. Korolik
Olesya O. Kapitanova
Xiao Fu
Hak Dong Cho
Tae Won Kang
Gennady N Panin
author_facet Egor A. Kolesov
Mikhail S. Tivanov
Olga V. Korolik
Olesya O. Kapitanova
Xiao Fu
Hak Dong Cho
Tae Won Kang
Gennady N Panin
author_sort Egor A. Kolesov
collection DOAJ
description Atmospheric doping of supported graphene was investigated by Raman scattering under different pressures. Various Raman spectra parameters were found to depend on the pressure and the substrate material. The results are interpreted in terms of atmospheric adsorption leading to a change in graphene charge carrier density and the effect of the substrate on the electronic and phonon properties of graphene. It was found that adsorption of molecules from the atmosphere onto graphene doped with nitrogen (electron doping) compensates for the electron charge. Furthermore, the atmosphere-induced doping drastically decreases the spatial heterogeneity of charge carriers in graphene doped with nitrogen, while the opposite effect was observed for undoped samples. The results of this study should be taken into account for the development of sensors and nanoelectronic devices based on graphene.
first_indexed 2024-12-21T02:15:20Z
format Article
id doaj.art-79ba28ece6ca459ca2d201524b734070
institution Directory Open Access Journal
issn 2190-4286
language English
last_indexed 2024-12-21T02:15:20Z
publishDate 2018-02-01
publisher Beilstein-Institut
record_format Article
series Beilstein Journal of Nanotechnology
spelling doaj.art-79ba28ece6ca459ca2d201524b7340702022-12-21T19:19:16ZengBeilstein-InstitutBeilstein Journal of Nanotechnology2190-42862018-02-019170471010.3762/bjnano.9.652190-4286-9-65The effect of atmospheric doping on pressure-dependent Raman scattering in supported grapheneEgor A. Kolesov0Mikhail S. Tivanov1Olga V. Korolik2Olesya O. Kapitanova3Xiao Fu4Hak Dong Cho5Tae Won Kang6Gennady N Panin7Belarusian State University, 4 Nezavisimosti Av., 220030 Minsk, BelarusBelarusian State University, 4 Nezavisimosti Av., 220030 Minsk, BelarusBelarusian State University, 4 Nezavisimosti Av., 220030 Minsk, BelarusDepartment of Chemistry, Moscow State University, Leninskie Gory, 1, b.3, 119991, Moscow, RussiaDepartment of Physics, Quantum-Functional Semiconductor Research Center, Nano Information Technology Academy, Dongguk University, 3-26 Pildong, Junggu, 100-715, Seoul, KoreaDepartment of Physics, Quantum-Functional Semiconductor Research Center, Nano Information Technology Academy, Dongguk University, 3-26 Pildong, Junggu, 100-715, Seoul, KoreaDepartment of Physics, Quantum-Functional Semiconductor Research Center, Nano Information Technology Academy, Dongguk University, 3-26 Pildong, Junggu, 100-715, Seoul, KoreaDepartment of Physics, Quantum-Functional Semiconductor Research Center, Nano Information Technology Academy, Dongguk University, 3-26 Pildong, Junggu, 100-715, Seoul, KoreaAtmospheric doping of supported graphene was investigated by Raman scattering under different pressures. Various Raman spectra parameters were found to depend on the pressure and the substrate material. The results are interpreted in terms of atmospheric adsorption leading to a change in graphene charge carrier density and the effect of the substrate on the electronic and phonon properties of graphene. It was found that adsorption of molecules from the atmosphere onto graphene doped with nitrogen (electron doping) compensates for the electron charge. Furthermore, the atmosphere-induced doping drastically decreases the spatial heterogeneity of charge carriers in graphene doped with nitrogen, while the opposite effect was observed for undoped samples. The results of this study should be taken into account for the development of sensors and nanoelectronic devices based on graphene.https://doi.org/10.3762/bjnano.9.65adsorptiondopinggraphenepressureRaman spectroscopysubstrate
spellingShingle Egor A. Kolesov
Mikhail S. Tivanov
Olga V. Korolik
Olesya O. Kapitanova
Xiao Fu
Hak Dong Cho
Tae Won Kang
Gennady N Panin
The effect of atmospheric doping on pressure-dependent Raman scattering in supported graphene
Beilstein Journal of Nanotechnology
adsorption
doping
graphene
pressure
Raman spectroscopy
substrate
title The effect of atmospheric doping on pressure-dependent Raman scattering in supported graphene
title_full The effect of atmospheric doping on pressure-dependent Raman scattering in supported graphene
title_fullStr The effect of atmospheric doping on pressure-dependent Raman scattering in supported graphene
title_full_unstemmed The effect of atmospheric doping on pressure-dependent Raman scattering in supported graphene
title_short The effect of atmospheric doping on pressure-dependent Raman scattering in supported graphene
title_sort effect of atmospheric doping on pressure dependent raman scattering in supported graphene
topic adsorption
doping
graphene
pressure
Raman spectroscopy
substrate
url https://doi.org/10.3762/bjnano.9.65
work_keys_str_mv AT egorakolesov theeffectofatmosphericdopingonpressuredependentramanscatteringinsupportedgraphene
AT mikhailstivanov theeffectofatmosphericdopingonpressuredependentramanscatteringinsupportedgraphene
AT olgavkorolik theeffectofatmosphericdopingonpressuredependentramanscatteringinsupportedgraphene
AT olesyaokapitanova theeffectofatmosphericdopingonpressuredependentramanscatteringinsupportedgraphene
AT xiaofu theeffectofatmosphericdopingonpressuredependentramanscatteringinsupportedgraphene
AT hakdongcho theeffectofatmosphericdopingonpressuredependentramanscatteringinsupportedgraphene
AT taewonkang theeffectofatmosphericdopingonpressuredependentramanscatteringinsupportedgraphene
AT gennadynpanin theeffectofatmosphericdopingonpressuredependentramanscatteringinsupportedgraphene
AT egorakolesov effectofatmosphericdopingonpressuredependentramanscatteringinsupportedgraphene
AT mikhailstivanov effectofatmosphericdopingonpressuredependentramanscatteringinsupportedgraphene
AT olgavkorolik effectofatmosphericdopingonpressuredependentramanscatteringinsupportedgraphene
AT olesyaokapitanova effectofatmosphericdopingonpressuredependentramanscatteringinsupportedgraphene
AT xiaofu effectofatmosphericdopingonpressuredependentramanscatteringinsupportedgraphene
AT hakdongcho effectofatmosphericdopingonpressuredependentramanscatteringinsupportedgraphene
AT taewonkang effectofatmosphericdopingonpressuredependentramanscatteringinsupportedgraphene
AT gennadynpanin effectofatmosphericdopingonpressuredependentramanscatteringinsupportedgraphene