A SiGe 3-stage LNA for automotive radar application from 76 to 81 GHz
This paper presents the simulation results of the W-band 3-stage low noise amplifier which is designed in 0.13 μm SiGe BiCMOS technology. The LNA achieves a peak S21 of 24.1 dB and noise figure of 6 dB at 80 GHz with 3 dB bandwidth of 14 GHz from 73 to 87 GHz. S11 is better than 11 dB. The simulated...
Main Authors: | Budnyaev Vadim, Vertegel Valeriy |
---|---|
Format: | Article |
Language: | English |
Published: |
EDP Sciences
2019-01-01
|
Series: | ITM Web of Conferences |
Online Access: | https://www.itm-conferences.org/articles/itmconf/pdf/2019/07/itmconf_crimico2019_01004.pdf |
Similar Items
-
A 20–44 GHz Wideband LNA Design Using the SiGe Technology for 5G Millimeter-Wave Applications
by: Warsha Balani, et al.
Published: (2021-12-01) -
Phonon heat transport in superlattices: Case of Si/SiGe and SiGe/SiGe superlattices
by: M. Hijazi, et al.
Published: (2016-06-01) -
Selective SiGe nanostructures
by: Langdo, Thomas Andrew, 1974-
Published: (2005) -
Limited-area growth of Ge and SiGe on Si
by: Kim, Meekyung, Ph. D. Massachusetts Institute of Technology
Published: (2011) -
Si/SiGe heterointerfaces in one-, two-, and three-dimensional nanostructures: their impact on SiGe light emission
by: David J. Lockwood, et al.
Published: (2016-03-01)