| Summary: | Various strategies and mechanisms have been suggested for investigating a Schottky
contact behavior in molybdenum disulfide (MoS2) thin-film transistor
(TFT), which are still in much debate and controversy. As one of promising
breakthrough for transparent electronics with a high device performance, we have
realized MoS2 TFTs with source/drain electrodes consisting of transparent
bi-layers of a conducting oxide over a thin film of low work function metal.
Intercalation of a low work function metal layer, such as aluminum, between
MoS2 and transparent source/drain electrodes makes it possible to
optimize the Schottky contact characteristics, resulting in about 24-fold and 3
orders of magnitude enhancement of the field-effect mobility and on-off current
ratio, respectively, as well as transmittance of 87.4 % in the visible wavelength
range.
|
|---|