High performance and transparent multilayer MoS2 transistors: Tuning Schottky barrier characteristics
Various strategies and mechanisms have been suggested for investigating a Schottky contact behavior in molybdenum disulfide (MoS2) thin-film transistor (TFT), which are still in much debate and controversy. As one of promising breakthrough for transparent...
| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2016-05-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4953062 |
| _version_ | 1828858785852030976 |
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| author | Young Ki Hong Geonwook Yoo Junyeon Kwon Seongin Hong Won Geun Song Na Liu Inturu Omkaram Byungwook Yoo Sanghyun Ju Sunkook Kim Min Suk Oh |
| author_facet | Young Ki Hong Geonwook Yoo Junyeon Kwon Seongin Hong Won Geun Song Na Liu Inturu Omkaram Byungwook Yoo Sanghyun Ju Sunkook Kim Min Suk Oh |
| author_sort | Young Ki Hong |
| collection | DOAJ |
| description | Various strategies and mechanisms have been suggested for investigating a Schottky
contact behavior in molybdenum disulfide (MoS2) thin-film transistor
(TFT), which are still in much debate and controversy. As one of promising
breakthrough for transparent electronics with a high device performance, we have
realized MoS2 TFTs with source/drain electrodes consisting of transparent
bi-layers of a conducting oxide over a thin film of low work function metal.
Intercalation of a low work function metal layer, such as aluminum, between
MoS2 and transparent source/drain electrodes makes it possible to
optimize the Schottky contact characteristics, resulting in about 24-fold and 3
orders of magnitude enhancement of the field-effect mobility and on-off current
ratio, respectively, as well as transmittance of 87.4 % in the visible wavelength
range. |
| first_indexed | 2024-12-13T02:04:26Z |
| format | Article |
| id | doaj.art-79df7228df6347128f3761c43726890a |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-13T02:04:26Z |
| publishDate | 2016-05-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-79df7228df6347128f3761c43726890a2022-12-22T00:03:11ZengAIP Publishing LLCAIP Advances2158-32262016-05-0165055026055026-610.1063/1.4953062093605ADVHigh performance and transparent multilayer MoS2 transistors: Tuning Schottky barrier characteristicsYoung Ki Hong0Geonwook Yoo1Junyeon Kwon2Seongin Hong3Won Geun Song4Na Liu5Inturu Omkaram6Byungwook Yoo7Sanghyun Ju8Sunkook Kim9Min Suk Oh10Multi-Functional Bio/Nano Lab., Kyung Hee University, Gyeonggi 446-701, South KoreaDisplay Convergence Research Center, Korea Electronics Technology Institute, Gyeonggi 463-816, South KoreaMulti-Functional Bio/Nano Lab., Kyung Hee University, Gyeonggi 446-701, South KoreaMulti-Functional Bio/Nano Lab., Kyung Hee University, Gyeonggi 446-701, South KoreaMulti-Functional Bio/Nano Lab., Kyung Hee University, Gyeonggi 446-701, South KoreaMulti-Functional Bio/Nano Lab., Kyung Hee University, Gyeonggi 446-701, South KoreaMulti-Functional Bio/Nano Lab., Kyung Hee University, Gyeonggi 446-701, South KoreaDisplay Convergence Research Center, Korea Electronics Technology Institute, Gyeonggi 463-816, South KoreaDepartment of Physics, Kyonggi University, Suwon, Gyeonggi-Do 443-760, South KoreaMulti-Functional Bio/Nano Lab., Kyung Hee University, Gyeonggi 446-701, South KoreaDisplay Convergence Research Center, Korea Electronics Technology Institute, Gyeonggi 463-816, South KoreaVarious strategies and mechanisms have been suggested for investigating a Schottky contact behavior in molybdenum disulfide (MoS2) thin-film transistor (TFT), which are still in much debate and controversy. As one of promising breakthrough for transparent electronics with a high device performance, we have realized MoS2 TFTs with source/drain electrodes consisting of transparent bi-layers of a conducting oxide over a thin film of low work function metal. Intercalation of a low work function metal layer, such as aluminum, between MoS2 and transparent source/drain electrodes makes it possible to optimize the Schottky contact characteristics, resulting in about 24-fold and 3 orders of magnitude enhancement of the field-effect mobility and on-off current ratio, respectively, as well as transmittance of 87.4 % in the visible wavelength range.http://dx.doi.org/10.1063/1.4953062 |
| spellingShingle | Young Ki Hong Geonwook Yoo Junyeon Kwon Seongin Hong Won Geun Song Na Liu Inturu Omkaram Byungwook Yoo Sanghyun Ju Sunkook Kim Min Suk Oh High performance and transparent multilayer MoS2 transistors: Tuning Schottky barrier characteristics AIP Advances |
| title | High performance and transparent multilayer MoS2 transistors:
Tuning Schottky barrier characteristics |
| title_full | High performance and transparent multilayer MoS2 transistors:
Tuning Schottky barrier characteristics |
| title_fullStr | High performance and transparent multilayer MoS2 transistors:
Tuning Schottky barrier characteristics |
| title_full_unstemmed | High performance and transparent multilayer MoS2 transistors:
Tuning Schottky barrier characteristics |
| title_short | High performance and transparent multilayer MoS2 transistors:
Tuning Schottky barrier characteristics |
| title_sort | high performance and transparent multilayer mos2 transistors tuning schottky barrier characteristics |
| url | http://dx.doi.org/10.1063/1.4953062 |
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