pn-homojunction formation in single fullerene films
A pn-homojunction was fabricated in a single fullerene (C60) film containing MoO3- and Ca-doped regions. The clear observation of masking effects under light irradiation to both sides of the electrode confirmed the existence of a pn-homojunction in the bulk cell. The position of the pn-homojunction...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2011-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.3647994 |
| _version_ | 1819060961077624832 |
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| author | Masayuki Kubo Toshihiko Kaji Masahiro Hiramoto |
| author_facet | Masayuki Kubo Toshihiko Kaji Masahiro Hiramoto |
| author_sort | Masayuki Kubo |
| collection | DOAJ |
| description | A pn-homojunction was fabricated in a single fullerene (C60) film containing MoO3- and Ca-doped regions. The clear observation of masking effects under light irradiation to both sides of the electrode confirmed the existence of a pn-homojunction in the bulk cell. The position of the pn-homojunction was intentionally controlled by changing the thickness of the MoO3/Ca doped regions. |
| first_indexed | 2024-12-21T14:35:18Z |
| format | Article |
| id | doaj.art-79e8c1f6f5204b1f8c22a2b30686f530 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-21T14:35:18Z |
| publishDate | 2011-09-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-79e8c1f6f5204b1f8c22a2b30686f5302022-12-21T19:00:20ZengAIP Publishing LLCAIP Advances2158-32262011-09-0113032177032177-510.1063/1.3647994077103ADVpn-homojunction formation in single fullerene filmsMasayuki Kubo0Toshihiko Kaji1Masahiro Hiramoto2Institute for Molecular Science, 5-1 Higashiyama, Myodaiji, Okazaki 444-8787, Aichi, JapanInstitute for Molecular Science, 5-1 Higashiyama, Myodaiji, Okazaki 444-8787, Aichi, JapanInstitute for Molecular Science, 5-1 Higashiyama, Myodaiji, Okazaki 444-8787, Aichi, JapanA pn-homojunction was fabricated in a single fullerene (C60) film containing MoO3- and Ca-doped regions. The clear observation of masking effects under light irradiation to both sides of the electrode confirmed the existence of a pn-homojunction in the bulk cell. The position of the pn-homojunction was intentionally controlled by changing the thickness of the MoO3/Ca doped regions.http://dx.doi.org/10.1063/1.3647994 |
| spellingShingle | Masayuki Kubo Toshihiko Kaji Masahiro Hiramoto pn-homojunction formation in single fullerene films AIP Advances |
| title | pn-homojunction formation in single fullerene films |
| title_full | pn-homojunction formation in single fullerene films |
| title_fullStr | pn-homojunction formation in single fullerene films |
| title_full_unstemmed | pn-homojunction formation in single fullerene films |
| title_short | pn-homojunction formation in single fullerene films |
| title_sort | pn homojunction formation in single fullerene films |
| url | http://dx.doi.org/10.1063/1.3647994 |
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