Information readout devices for large-size matrices of IR-photodiodes

The research results are given for designed and manufactured readout devices for matrices of infrared photodiodes of formats 640×512 and 320×256. The article comments the architecture of reading circuit diagramming and its influence on the parameters of the FPU, the design of interfaces with an infr...

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Main Authors: Reva V. P., Marchishin I. V., Korinets S. V., Sizov F. F.
Format: Article
Language:English
Published: Politehperiodika 2011-08-01
Series:Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
Subjects:
Online Access:http://www.tkea.com.ua/tkea/2011/4_2011/pdf/05.zip
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author Reva V. P.
Marchishin I. V.
Korinets S. V.
Sizov F. F.
author_facet Reva V. P.
Marchishin I. V.
Korinets S. V.
Sizov F. F.
author_sort Reva V. P.
collection DOAJ
description The research results are given for designed and manufactured readout devices for matrices of infrared photodiodes of formats 640×512 and 320×256. The article comments the architecture of reading circuit diagramming and its influence on the parameters of the FPU, the design of interfaces with an infrared photodiodes, the design of the reading circuit of the information charge, the influence of the geometric dimensions of the matrix elements on the output parameters of readout devices. A comparison of calculated and measured parameters of readout devices has been carried out.
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spelling doaj.art-79f0448ca67c4b20992fe7e9626c1eac2022-12-22T01:36:42ZengPolitehperiodikaTekhnologiya i Konstruirovanie v Elektronnoi Apparature2225-58182011-08-0142528Information readout devices for large-size matrices of IR-photodiodesReva V. P.Marchishin I. V.Korinets S. V.Sizov F. F.The research results are given for designed and manufactured readout devices for matrices of infrared photodiodes of formats 640×512 and 320×256. The article comments the architecture of reading circuit diagramming and its influence on the parameters of the FPU, the design of interfaces with an infrared photodiodes, the design of the reading circuit of the information charge, the influence of the geometric dimensions of the matrix elements on the output parameters of readout devices. A comparison of calculated and measured parameters of readout devices has been carried out.http://www.tkea.com.ua/tkea/2011/4_2011/pdf/05.zipphotodetectorsreadout circuitIR photodiodessilicon integrated circuits
spellingShingle Reva V. P.
Marchishin I. V.
Korinets S. V.
Sizov F. F.
Information readout devices for large-size matrices of IR-photodiodes
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature
photodetectors
readout circuit
IR photodiodes
silicon integrated circuits
title Information readout devices for large-size matrices of IR-photodiodes
title_full Information readout devices for large-size matrices of IR-photodiodes
title_fullStr Information readout devices for large-size matrices of IR-photodiodes
title_full_unstemmed Information readout devices for large-size matrices of IR-photodiodes
title_short Information readout devices for large-size matrices of IR-photodiodes
title_sort information readout devices for large size matrices of ir photodiodes
topic photodetectors
readout circuit
IR photodiodes
silicon integrated circuits
url http://www.tkea.com.ua/tkea/2011/4_2011/pdf/05.zip
work_keys_str_mv AT revavp informationreadoutdevicesforlargesizematricesofirphotodiodes
AT marchishiniv informationreadoutdevicesforlargesizematricesofirphotodiodes
AT korinetssv informationreadoutdevicesforlargesizematricesofirphotodiodes
AT sizovff informationreadoutdevicesforlargesizematricesofirphotodiodes