Electric Double Layer Field-Effect Transistors Using Two-Dimensional (2D) Layers of Copper Indium Selenide (CuIn<sub>7</sub>Se<sub>11</sub>)

Electric Double Layer Field-Effect Transistors Using Two-Dimensional (2D) Layers of Copper Indium Selenide (CuIn<sub>7</sub>Se<sub>11</sub>)

Innovations in the design of field-effect transistor (FET) devices will be the key to future application development related to ultrathin and low-power device technologies. In order to boost the current semiconductor device industry, new device architectures based on novel materials and system need...

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Bibliographic Details
Main Authors:	Prasanna D. Patil, Sujoy Ghosh, Milinda Wasala, Sidong Lei, Robert Vajtai, Pulickel M. Ajayan, Saikat Talapatra
Format:	Article
Language:	English
Published:	MDPI AG 2019-06-01
Series:	Electronics
Subjects:	2D materials copper indium selenide field-effect transistors electric double layer EDL-FET ionic liquid BMIM-PF<sub>6</sub>
Online Access:	https://www.mdpi.com/2079-9292/8/6/645

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