Electric Double Layer Field-Effect Transistors Using Two-Dimensional (2D) Layers of Copper Indium Selenide (CuIn<sub>7</sub>Se<sub>11</sub>)
Innovations in the design of field-effect transistor (FET) devices will be the key to future application development related to ultrathin and low-power device technologies. In order to boost the current semiconductor device industry, new device architectures based on novel materials and system need...
Main Authors: | Prasanna D. Patil, Sujoy Ghosh, Milinda Wasala, Sidong Lei, Robert Vajtai, Pulickel M. Ajayan, Saikat Talapatra |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2019-06-01
|
Series: | Electronics |
Subjects: | |
Online Access: | https://www.mdpi.com/2079-9292/8/6/645 |
Similar Items
-
Thermoelectric Properties of Si-Doped In<sub>2</sub>Se<sub>3</sub> Polycrystalline Alloys
by: Okmin Park, et al.
Published: (2022-07-01) -
The Role Ionic Liquid [BMIM][PF<sub>6</sub>] in One-Pot Synthesis of Tetrahydropyran Rings through Tandem Barbier–Prins Reaction
by: Poliane K. Batista, et al.
Published: (2019-05-01) -
Effect of In-Incorporation and Annealing on Cu<sub>x</sub>Se Thin Films
by: Algimantas Ivanauskas, et al.
Published: (2021-07-01) -
Molecular Beam Epitaxy of Twin-Free Bi<sub>2</sub>Se<sub>3</sub> and Sb<sub>2</sub>Te<sub>3</sub> on In<sub>2</sub>Se<sub>3</sub>/InP(111)B Virtual Substrates
by: Kaushini S. Wickramasinghe, et al.
Published: (2023-04-01) -
Analysis of Post-Deposition Recrystallization Processing via Indium Bromide of Cu(In,Ga)Se<sub>2</sub> Thin Films
by: Deewakar Poudel, et al.
Published: (2021-06-01)