A three-dimensional silicon photonic crystal nanocavity with enhanced emission from embedded germanium islands
We report the realization of a silicon three-dimensional photonic crystal nanocavity containing self-assembled germanium-island emitters. The three-dimensional woodpile photonic crystal was assembled layer by layer by micromanipulation using silicon plates grown by molecular beam epitaxy. An optical...
| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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IOP Publishing
2012-01-01
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| Series: | New Journal of Physics |
| Online Access: | https://doi.org/10.1088/1367-2630/14/8/083035 |
| _version_ | 1797751586347286528 |
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| author | N Hauke A Tandaechanurat T Zabel T Reichert H Takagi M Kaniber S Iwamoto D Bougeard J J Finley G Abstreiter Y Arakawa |
| author_facet | N Hauke A Tandaechanurat T Zabel T Reichert H Takagi M Kaniber S Iwamoto D Bougeard J J Finley G Abstreiter Y Arakawa |
| author_sort | N Hauke |
| collection | DOAJ |
| description | We report the realization of a silicon three-dimensional photonic crystal nanocavity containing self-assembled germanium-island emitters. The three-dimensional woodpile photonic crystal was assembled layer by layer by micromanipulation using silicon plates grown by molecular beam epitaxy. An optical nanocavity was formed in the center of the photonic crystal by introducing a point defect into one of the plates. Measurements of the filtered spontaneous emission from the Ge islands in the active plate through the localized modes of the structure directly reveal information on the evolution of the frequency and Q -factor as upper cladding plates are sequentially added. An exponential increase of the cavity- Q is observed when the number of upper cladding plates is increased up to a maximum of ten. The emission of germanium-islands within the cavity reveals several strongly polarized cavity modes with quality-factors up to ≈13 600. The emission intensity of the cavity modes is enhanced by large factors up to ≈58× as compared with the active plate outside the photonic environment. |
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| id | doaj.art-7a9f3de931f84c0c81882a814b1ba10b |
| institution | Directory Open Access Journal |
| issn | 1367-2630 |
| language | English |
| last_indexed | 2024-03-12T16:50:40Z |
| publishDate | 2012-01-01 |
| publisher | IOP Publishing |
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| series | New Journal of Physics |
| spelling | doaj.art-7a9f3de931f84c0c81882a814b1ba10b2023-08-08T11:10:32ZengIOP PublishingNew Journal of Physics1367-26302012-01-0114808303510.1088/1367-2630/14/8/083035A three-dimensional silicon photonic crystal nanocavity with enhanced emission from embedded germanium islandsN Hauke0A Tandaechanurat1T Zabel2T Reichert3H Takagi4M Kaniber5S Iwamoto6D Bougeard7J J Finley8G Abstreiter9Y Arakawa10Institute of Industrial Science, Institute for Nano Quantum Information Electronics, The University of Tokyo , 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan; Walter Schottky Institut and Physik Department, Technische Universität München , Am Coulombwall 4, D-85748 Garching, GermanyInstitute of Industrial Science, Institute for Nano Quantum Information Electronics, The University of Tokyo , 4-6-1 Komaba, Meguro, Tokyo 153-8505, JapanWalter Schottky Institut and Physik Department, Technische Universität München , Am Coulombwall 4, D-85748 Garching, GermanyWalter Schottky Institut and Physik Department, Technische Universität München , Am Coulombwall 4, D-85748 Garching, GermanyInstitute of Industrial Science, Institute for Nano Quantum Information Electronics, The University of Tokyo , 4-6-1 Komaba, Meguro, Tokyo 153-8505, JapanWalter Schottky Institut and Physik Department, Technische Universität München , Am Coulombwall 4, D-85748 Garching, GermanyInstitute of Industrial Science, Institute for Nano Quantum Information Electronics, The University of Tokyo , 4-6-1 Komaba, Meguro, Tokyo 153-8505, JapanWalter Schottky Institut and Physik Department, Technische Universität München , Am Coulombwall 4, D-85748 Garching, Germany; Institut für Experimentelle und Angewandte Physik, Universität Regensburg , D-93040 Regensburg, GermanyWalter Schottky Institut and Physik Department, Technische Universität München , Am Coulombwall 4, D-85748 Garching, GermanyWalter Schottky Institut and Physik Department, Technische Universität München , Am Coulombwall 4, D-85748 Garching, Germany; Institute for Advanced Study, Technische Universität München , D-85748 Garching, GermanyInstitute of Industrial Science, Institute for Nano Quantum Information Electronics, The University of Tokyo , 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan; Institute for Advanced Study, Technische Universität München , D-85748 Garching, GermanyWe report the realization of a silicon three-dimensional photonic crystal nanocavity containing self-assembled germanium-island emitters. The three-dimensional woodpile photonic crystal was assembled layer by layer by micromanipulation using silicon plates grown by molecular beam epitaxy. An optical nanocavity was formed in the center of the photonic crystal by introducing a point defect into one of the plates. Measurements of the filtered spontaneous emission from the Ge islands in the active plate through the localized modes of the structure directly reveal information on the evolution of the frequency and Q -factor as upper cladding plates are sequentially added. An exponential increase of the cavity- Q is observed when the number of upper cladding plates is increased up to a maximum of ten. The emission of germanium-islands within the cavity reveals several strongly polarized cavity modes with quality-factors up to ≈13 600. The emission intensity of the cavity modes is enhanced by large factors up to ≈58× as compared with the active plate outside the photonic environment.https://doi.org/10.1088/1367-2630/14/8/083035 |
| spellingShingle | N Hauke A Tandaechanurat T Zabel T Reichert H Takagi M Kaniber S Iwamoto D Bougeard J J Finley G Abstreiter Y Arakawa A three-dimensional silicon photonic crystal nanocavity with enhanced emission from embedded germanium islands New Journal of Physics |
| title | A three-dimensional silicon photonic crystal nanocavity with enhanced emission from embedded germanium islands |
| title_full | A three-dimensional silicon photonic crystal nanocavity with enhanced emission from embedded germanium islands |
| title_fullStr | A three-dimensional silicon photonic crystal nanocavity with enhanced emission from embedded germanium islands |
| title_full_unstemmed | A three-dimensional silicon photonic crystal nanocavity with enhanced emission from embedded germanium islands |
| title_short | A three-dimensional silicon photonic crystal nanocavity with enhanced emission from embedded germanium islands |
| title_sort | three dimensional silicon photonic crystal nanocavity with enhanced emission from embedded germanium islands |
| url | https://doi.org/10.1088/1367-2630/14/8/083035 |
| work_keys_str_mv | AT nhauke athreedimensionalsiliconphotoniccrystalnanocavitywithenhancedemissionfromembeddedgermaniumislands AT atandaechanurat athreedimensionalsiliconphotoniccrystalnanocavitywithenhancedemissionfromembeddedgermaniumislands AT tzabel athreedimensionalsiliconphotoniccrystalnanocavitywithenhancedemissionfromembeddedgermaniumislands AT treichert athreedimensionalsiliconphotoniccrystalnanocavitywithenhancedemissionfromembeddedgermaniumislands AT htakagi athreedimensionalsiliconphotoniccrystalnanocavitywithenhancedemissionfromembeddedgermaniumislands AT mkaniber athreedimensionalsiliconphotoniccrystalnanocavitywithenhancedemissionfromembeddedgermaniumislands AT siwamoto athreedimensionalsiliconphotoniccrystalnanocavitywithenhancedemissionfromembeddedgermaniumislands AT dbougeard athreedimensionalsiliconphotoniccrystalnanocavitywithenhancedemissionfromembeddedgermaniumislands AT jjfinley athreedimensionalsiliconphotoniccrystalnanocavitywithenhancedemissionfromembeddedgermaniumislands AT gabstreiter athreedimensionalsiliconphotoniccrystalnanocavitywithenhancedemissionfromembeddedgermaniumislands AT yarakawa athreedimensionalsiliconphotoniccrystalnanocavitywithenhancedemissionfromembeddedgermaniumislands AT nhauke threedimensionalsiliconphotoniccrystalnanocavitywithenhancedemissionfromembeddedgermaniumislands AT atandaechanurat threedimensionalsiliconphotoniccrystalnanocavitywithenhancedemissionfromembeddedgermaniumislands AT tzabel threedimensionalsiliconphotoniccrystalnanocavitywithenhancedemissionfromembeddedgermaniumislands AT treichert threedimensionalsiliconphotoniccrystalnanocavitywithenhancedemissionfromembeddedgermaniumislands AT htakagi threedimensionalsiliconphotoniccrystalnanocavitywithenhancedemissionfromembeddedgermaniumislands AT mkaniber threedimensionalsiliconphotoniccrystalnanocavitywithenhancedemissionfromembeddedgermaniumislands AT siwamoto threedimensionalsiliconphotoniccrystalnanocavitywithenhancedemissionfromembeddedgermaniumislands AT dbougeard threedimensionalsiliconphotoniccrystalnanocavitywithenhancedemissionfromembeddedgermaniumislands AT jjfinley threedimensionalsiliconphotoniccrystalnanocavitywithenhancedemissionfromembeddedgermaniumislands AT gabstreiter threedimensionalsiliconphotoniccrystalnanocavitywithenhancedemissionfromembeddedgermaniumislands AT yarakawa threedimensionalsiliconphotoniccrystalnanocavitywithenhancedemissionfromembeddedgermaniumislands |