41.6 Gb/s High-Depth Pre-Interleaver for DFE Error Propagation in 65 nm CMOS Technology

A high-speed, high-depth pre-interleaver in the proposed symbol pre-interleaving Bit MUX (PBM) was implemented to mitigate decision feedback equalizer (DFE) error propagation in a 400 G Ethernet Serializer–Deserializer (SerDes) interface. Based on the SerDes interface link architecture with 5-tap DF...

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Main Authors: Yongzheng Zhan, Tuo Li, Xiaofeng Zou, Qingsheng Hu, Lianming Li, Lu Zhang
Format: Article
Language:English
Published: MDPI AG 2023-09-01
Series:Electronics
Subjects:
Online Access:https://www.mdpi.com/2079-9292/12/18/3912
_version_ 1797580460936658944
author Yongzheng Zhan
Tuo Li
Xiaofeng Zou
Qingsheng Hu
Lianming Li
Lu Zhang
author_facet Yongzheng Zhan
Tuo Li
Xiaofeng Zou
Qingsheng Hu
Lianming Li
Lu Zhang
author_sort Yongzheng Zhan
collection DOAJ
description A high-speed, high-depth pre-interleaver in the proposed symbol pre-interleaving Bit MUX (PBM) was implemented to mitigate decision feedback equalizer (DFE) error propagation in a 400 G Ethernet Serializer–Deserializer (SerDes) interface. Based on the SerDes interface link architecture with 5-tap DFE, the performance of the PBM under DFE error propagation was simulated theoretically, which could obtain an interleaving gain of 0.35 dB. In the pre-interleaver, in order to significantly increase the transmission rate while keeping the larger interleaving depth, characteristic polynomial parallelization with the logic expansion method and register-based memory with interleaving technology were adopted. Finally, the pre-interleaver was fabricated with 65 nm CMOS technology, with a total area of 0.615 mm<sup>2</sup>, including the I/O pad. The measurement results show that the horizontal opening degree of the output signal can reach 0.925 UI at the data rate of 41.6 Gb/s. The total power consumption is 38.52 mW at the supply voltage of 1.2 V and frequency of 1.3 GHz.
first_indexed 2024-03-10T22:50:20Z
format Article
id doaj.art-7aa2b0af5a5c4c36b1c8ad686e18c0f9
institution Directory Open Access Journal
issn 2079-9292
language English
last_indexed 2024-03-10T22:50:20Z
publishDate 2023-09-01
publisher MDPI AG
record_format Article
series Electronics
spelling doaj.art-7aa2b0af5a5c4c36b1c8ad686e18c0f92023-11-19T10:23:07ZengMDPI AGElectronics2079-92922023-09-011218391210.3390/electronics1218391241.6 Gb/s High-Depth Pre-Interleaver for DFE Error Propagation in 65 nm CMOS TechnologyYongzheng Zhan0Tuo Li1Xiaofeng Zou2Qingsheng Hu3Lianming Li4Lu Zhang5Shandong Yunhai Guochuang Cloud Computing Equipment Industry Innovation Co., Ltd., Jinan 250101, ChinaShandong Yunhai Guochuang Cloud Computing Equipment Industry Innovation Co., Ltd., Jinan 250101, ChinaShandong Yunhai Guochuang Cloud Computing Equipment Industry Innovation Co., Ltd., Jinan 250101, ChinaInstitute of RF- & OE-ICs, Southeast University, Nanjing 210096, ChinaPurple Mountain Laboratories, Nanjing 211111, ChinaShandong Yunhai Guochuang Cloud Computing Equipment Industry Innovation Co., Ltd., Jinan 250101, ChinaA high-speed, high-depth pre-interleaver in the proposed symbol pre-interleaving Bit MUX (PBM) was implemented to mitigate decision feedback equalizer (DFE) error propagation in a 400 G Ethernet Serializer–Deserializer (SerDes) interface. Based on the SerDes interface link architecture with 5-tap DFE, the performance of the PBM under DFE error propagation was simulated theoretically, which could obtain an interleaving gain of 0.35 dB. In the pre-interleaver, in order to significantly increase the transmission rate while keeping the larger interleaving depth, characteristic polynomial parallelization with the logic expansion method and register-based memory with interleaving technology were adopted. Finally, the pre-interleaver was fabricated with 65 nm CMOS technology, with a total area of 0.615 mm<sup>2</sup>, including the I/O pad. The measurement results show that the horizontal opening degree of the output signal can reach 0.925 UI at the data rate of 41.6 Gb/s. The total power consumption is 38.52 mW at the supply voltage of 1.2 V and frequency of 1.3 GHz.https://www.mdpi.com/2079-9292/12/18/3912high speedpre-interleaverDFE error propagationparallel PRBS generatorregister
spellingShingle Yongzheng Zhan
Tuo Li
Xiaofeng Zou
Qingsheng Hu
Lianming Li
Lu Zhang
41.6 Gb/s High-Depth Pre-Interleaver for DFE Error Propagation in 65 nm CMOS Technology
Electronics
high speed
pre-interleaver
DFE error propagation
parallel PRBS generator
register
title 41.6 Gb/s High-Depth Pre-Interleaver for DFE Error Propagation in 65 nm CMOS Technology
title_full 41.6 Gb/s High-Depth Pre-Interleaver for DFE Error Propagation in 65 nm CMOS Technology
title_fullStr 41.6 Gb/s High-Depth Pre-Interleaver for DFE Error Propagation in 65 nm CMOS Technology
title_full_unstemmed 41.6 Gb/s High-Depth Pre-Interleaver for DFE Error Propagation in 65 nm CMOS Technology
title_short 41.6 Gb/s High-Depth Pre-Interleaver for DFE Error Propagation in 65 nm CMOS Technology
title_sort 41 6 gb s high depth pre interleaver for dfe error propagation in 65 nm cmos technology
topic high speed
pre-interleaver
DFE error propagation
parallel PRBS generator
register
url https://www.mdpi.com/2079-9292/12/18/3912
work_keys_str_mv AT yongzhengzhan 416gbshighdepthpreinterleaverfordfeerrorpropagationin65nmcmostechnology
AT tuoli 416gbshighdepthpreinterleaverfordfeerrorpropagationin65nmcmostechnology
AT xiaofengzou 416gbshighdepthpreinterleaverfordfeerrorpropagationin65nmcmostechnology
AT qingshenghu 416gbshighdepthpreinterleaverfordfeerrorpropagationin65nmcmostechnology
AT lianmingli 416gbshighdepthpreinterleaverfordfeerrorpropagationin65nmcmostechnology
AT luzhang 416gbshighdepthpreinterleaverfordfeerrorpropagationin65nmcmostechnology