Nonlinear dynamics of non-equilibrium holes in <it>p</it>-type modulation-doped GaInNAs/GaAs quantum wells
<p>Abstract</p> <p>Nonlinear charge transport parallel to the layers of <it>p</it>-modulation-doped GaInNAs/GaAs quantum wells (QWs) is studied both theoretically and experimentally. Experimental results show that at low temperature, <it>T </it>= 13 K, the p...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2011-01-01
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| Series: | Nanoscale Research Letters |
| Online Access: | http://www.nanoscalereslett.com/content/6/1/191 |
| Summary: | <p>Abstract</p> <p>Nonlinear charge transport parallel to the layers of <it>p</it>-modulation-doped GaInNAs/GaAs quantum wells (QWs) is studied both theoretically and experimentally. Experimental results show that at low temperature, <it>T </it>= 13 K, the presence of an applied electric field of about 6 kV/cm leads to the heating of the high mobility holes in the GaInNAs QWs, and their real-space transfer (RST) into the low-mobility GaAs barriers. This results in a negative differential mobility and self-generated oscillatory instabilities in the RST regime. We developed an analytical model based upon the coupled nonlinear dynamics of the real-space hole transfer and of the interface potential barrier controlled by space-charge in the doped GaAs layer. Our simulation results predict dc bias-dependent self-generated current oscillations with frequencies in the high microwave range.</p> |
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| ISSN: | 1931-7573 1556-276X |