Nonlinear dynamics of non-equilibrium holes in <it>p</it>-type modulation-doped GaInNAs/GaAs quantum wells
<p>Abstract</p> <p>Nonlinear charge transport parallel to the layers of <it>p</it>-modulation-doped GaInNAs/GaAs quantum wells (QWs) is studied both theoretically and experimentally. Experimental results show that at low temperature, <it>T </it>= 13 K, the p...
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Format: | Article |
Language: | English |
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SpringerOpen
2011-01-01
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Series: | Nanoscale Research Letters |
Online Access: | http://www.nanoscalereslett.com/content/6/1/191 |
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author | Amann Andreas Sopanen Markku Khalil Hagir Sun Yun Balkan Naci |
author_facet | Amann Andreas Sopanen Markku Khalil Hagir Sun Yun Balkan Naci |
author_sort | Amann Andreas |
collection | DOAJ |
description | <p>Abstract</p> <p>Nonlinear charge transport parallel to the layers of <it>p</it>-modulation-doped GaInNAs/GaAs quantum wells (QWs) is studied both theoretically and experimentally. Experimental results show that at low temperature, <it>T </it>= 13 K, the presence of an applied electric field of about 6 kV/cm leads to the heating of the high mobility holes in the GaInNAs QWs, and their real-space transfer (RST) into the low-mobility GaAs barriers. This results in a negative differential mobility and self-generated oscillatory instabilities in the RST regime. We developed an analytical model based upon the coupled nonlinear dynamics of the real-space hole transfer and of the interface potential barrier controlled by space-charge in the doped GaAs layer. Our simulation results predict dc bias-dependent self-generated current oscillations with frequencies in the high microwave range.</p> |
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institution | Directory Open Access Journal |
issn | 1931-7573 1556-276X |
language | English |
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publishDate | 2011-01-01 |
publisher | SpringerOpen |
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series | Nanoscale Research Letters |
spelling | doaj.art-7afe922a2777432fbcdf16dccb1ee0ed2023-08-02T06:39:00ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2011-01-0161191Nonlinear dynamics of non-equilibrium holes in <it>p</it>-type modulation-doped GaInNAs/GaAs quantum wellsAmann AndreasSopanen MarkkuKhalil HagirSun YunBalkan Naci<p>Abstract</p> <p>Nonlinear charge transport parallel to the layers of <it>p</it>-modulation-doped GaInNAs/GaAs quantum wells (QWs) is studied both theoretically and experimentally. Experimental results show that at low temperature, <it>T </it>= 13 K, the presence of an applied electric field of about 6 kV/cm leads to the heating of the high mobility holes in the GaInNAs QWs, and their real-space transfer (RST) into the low-mobility GaAs barriers. This results in a negative differential mobility and self-generated oscillatory instabilities in the RST regime. We developed an analytical model based upon the coupled nonlinear dynamics of the real-space hole transfer and of the interface potential barrier controlled by space-charge in the doped GaAs layer. Our simulation results predict dc bias-dependent self-generated current oscillations with frequencies in the high microwave range.</p>http://www.nanoscalereslett.com/content/6/1/191 |
spellingShingle | Amann Andreas Sopanen Markku Khalil Hagir Sun Yun Balkan Naci Nonlinear dynamics of non-equilibrium holes in <it>p</it>-type modulation-doped GaInNAs/GaAs quantum wells Nanoscale Research Letters |
title | Nonlinear dynamics of non-equilibrium holes in <it>p</it>-type modulation-doped GaInNAs/GaAs quantum wells |
title_full | Nonlinear dynamics of non-equilibrium holes in <it>p</it>-type modulation-doped GaInNAs/GaAs quantum wells |
title_fullStr | Nonlinear dynamics of non-equilibrium holes in <it>p</it>-type modulation-doped GaInNAs/GaAs quantum wells |
title_full_unstemmed | Nonlinear dynamics of non-equilibrium holes in <it>p</it>-type modulation-doped GaInNAs/GaAs quantum wells |
title_short | Nonlinear dynamics of non-equilibrium holes in <it>p</it>-type modulation-doped GaInNAs/GaAs quantum wells |
title_sort | nonlinear dynamics of non equilibrium holes in it p it type modulation doped gainnas gaas quantum wells |
url | http://www.nanoscalereslett.com/content/6/1/191 |
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