Overview on GaN FET structure, driving and its application
To make power electronic devices miniaturization and lightweight, GaN FET is paid extensive attention in power electronic application fields because of its advanced performance than Si device. GaN FET structure and its driving circuit have important impacts on operating safely and stably. In the pap...
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | zho |
| Published: |
National Computer System Engineering Research Institute of China
2020-01-01
|
| Series: | Dianzi Jishu Yingyong |
| Subjects: | |
| Online Access: | http://www.chinaaet.com/article/3000112333 |
| _version_ | 1819043441694212096 |
|---|---|
| author | Wu Wenjun Lan Xuemei |
| author_facet | Wu Wenjun Lan Xuemei |
| author_sort | Wu Wenjun |
| collection | DOAJ |
| description | To make power electronic devices miniaturization and lightweight, GaN FET is paid extensive attention in power electronic application fields because of its advanced performance than Si device. GaN FET structure and its driving circuit have important impacts on operating safely and stably. In the paper, firstly, the GaN FET structure and its products are introduced; Secondly, the isolated method is described, then the principles of the discrete driving circuit and the integrated driving circuit are presented; Finally, GaN FET′s application is summarized. |
| first_indexed | 2024-12-21T09:56:50Z |
| format | Article |
| id | doaj.art-7b1029377c694fd0ab96994910045072 |
| institution | Directory Open Access Journal |
| issn | 0258-7998 |
| language | zho |
| last_indexed | 2024-12-21T09:56:50Z |
| publishDate | 2020-01-01 |
| publisher | National Computer System Engineering Research Institute of China |
| record_format | Article |
| series | Dianzi Jishu Yingyong |
| spelling | doaj.art-7b1029377c694fd0ab969949100450722022-12-21T19:08:03ZzhoNational Computer System Engineering Research Institute of ChinaDianzi Jishu Yingyong0258-79982020-01-01461222910.16157/j.issn.0258-7998.1909613000112333Overview on GaN FET structure, driving and its applicationWu Wenjun0Lan Xuemei1School of Automation and Information Engineering，Xi′an University of Technology，Xi′an 710048，ChinaSchool of Automation and Information Engineering，Xi′an University of Technology，Xi′an 710048，ChinaTo make power electronic devices miniaturization and lightweight, GaN FET is paid extensive attention in power electronic application fields because of its advanced performance than Si device. GaN FET structure and its driving circuit have important impacts on operating safely and stably. In the paper, firstly, the GaN FET structure and its products are introduced; Secondly, the isolated method is described, then the principles of the discrete driving circuit and the integrated driving circuit are presented; Finally, GaN FET′s application is summarized.http://www.chinaaet.com/article/3000112333gan fetstuctureprincipledrivingproduct |
| spellingShingle | Wu Wenjun Lan Xuemei Overview on GaN FET structure, driving and its application Dianzi Jishu Yingyong gan fet stucture principle driving product |
| title | Overview on GaN FET structure, driving and its application |
| title_full | Overview on GaN FET structure, driving and its application |
| title_fullStr | Overview on GaN FET structure, driving and its application |
| title_full_unstemmed | Overview on GaN FET structure, driving and its application |
| title_short | Overview on GaN FET structure, driving and its application |
| title_sort | overview on gan fet structure driving and its application |
| topic | gan fet stucture principle driving product |
| url | http://www.chinaaet.com/article/3000112333 |
| work_keys_str_mv | AT wuwenjun overviewonganfetstructuredrivinganditsapplication AT lanxuemei overviewonganfetstructuredrivinganditsapplication |