Modeling Nanoscale III–V Channel MOSFETs with the Self-Consistent Multi-Valley/Multi-Subband Monte Carlo Approach

Modeling Nanoscale III–V Channel MOSFETs with the Self-Consistent Multi-Valley/Multi-Subband Monte Carlo Approach

We describe the multi-valley/multi-subband Monte Carlo (MV–MSMC) approach to model nanoscale MOSFETs featuring III–V semiconductors as channel material. This approach describes carrier quantization normal to the channel direction, solving the Schrödinger equation while off-equilibrium transport is c...

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Bibliographic Details
Main Authors: Enrico Caruso, David Esseni, Elena Gnani, Daniel Lizzit, Pierpaolo Palestri, Alessandro Pin, Francesco Maria Puglisi, Luca Selmi, Nicolò Zagni
Format: Article
Language:English
Published: MDPI AG 2021-10-01
Series:Electronics
Subjects:
III–V semiconductors
modeling and simulation
Monte Carlo
Online Access:https://www.mdpi.com/2079-9292/10/20/2472

Internet

https://www.mdpi.com/2079-9292/10/20/2472

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