High-Performance On-Chip Silicon Beamsplitter Based on Subwavelength Metamaterials for Enhanced Fabrication Tolerance

Efficient power splitting is a fundamental functionality in silicon photonic integrated circuits, but state-of-the-art power-division architectures are hampered by limited operational bandwidth, high sensitivity to fabrication errors or large footprints. In particular, traditional Y-junction power s...

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Main Authors: Raquel Fernández de Cabo, David González-Andrade, Pavel Cheben, Aitor V. Velasco
Format: Article
Language:English
Published: MDPI AG 2021-05-01
Series:Nanomaterials
Subjects:
Online Access:https://www.mdpi.com/2079-4991/11/5/1304
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author Raquel Fernández de Cabo
David González-Andrade
Pavel Cheben
Aitor V. Velasco
author_facet Raquel Fernández de Cabo
David González-Andrade
Pavel Cheben
Aitor V. Velasco
author_sort Raquel Fernández de Cabo
collection DOAJ
description Efficient power splitting is a fundamental functionality in silicon photonic integrated circuits, but state-of-the-art power-division architectures are hampered by limited operational bandwidth, high sensitivity to fabrication errors or large footprints. In particular, traditional Y-junction power splitters suffer from fundamental mode losses due to limited fabrication resolution near the junction tip. In order to circumvent this limitation, we propose a new type of high-performance Y-junction power splitter that incorporates subwavelength metamaterials. Full three-dimensional simulations show a fundamental mode excess loss below 0.1 dB in an ultra-broad bandwidth of 300 nm (1400–1700 nm) when optimized for a fabrication resolution of 50 nm, and under 0.3 dB in a 350 nm extended bandwidth (1350–1700 nm) for a 100 nm resolution. Moreover, analysis of fabrication tolerances shows robust operation for the fundamental mode to etching errors up to ±20 nm. A proof-of-concept device provides an initial validation of its operation principle, showing experimental excess losses lower than 0.2 dB in a 195 nm bandwidth for the best-case resolution scenario (i.e., 50 nm).
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spelling doaj.art-7b1dedc1929c4c25a2323bf1f37072d82023-11-21T19:48:37ZengMDPI AGNanomaterials2079-49912021-05-01115130410.3390/nano11051304High-Performance On-Chip Silicon Beamsplitter Based on Subwavelength Metamaterials for Enhanced Fabrication ToleranceRaquel Fernández de Cabo0David González-Andrade1Pavel Cheben2Aitor V. Velasco3Instituto de Óptica Daza de Valdés, Consejo Superior de Investigaciones Científicas (CSIC), 28006 Madrid, SpainInstituto de Óptica Daza de Valdés, Consejo Superior de Investigaciones Científicas (CSIC), 28006 Madrid, SpainNational Research Council Canada, Ottawa, ON K1A 0R6, CanadaInstituto de Óptica Daza de Valdés, Consejo Superior de Investigaciones Científicas (CSIC), 28006 Madrid, SpainEfficient power splitting is a fundamental functionality in silicon photonic integrated circuits, but state-of-the-art power-division architectures are hampered by limited operational bandwidth, high sensitivity to fabrication errors or large footprints. In particular, traditional Y-junction power splitters suffer from fundamental mode losses due to limited fabrication resolution near the junction tip. In order to circumvent this limitation, we propose a new type of high-performance Y-junction power splitter that incorporates subwavelength metamaterials. Full three-dimensional simulations show a fundamental mode excess loss below 0.1 dB in an ultra-broad bandwidth of 300 nm (1400–1700 nm) when optimized for a fabrication resolution of 50 nm, and under 0.3 dB in a 350 nm extended bandwidth (1350–1700 nm) for a 100 nm resolution. Moreover, analysis of fabrication tolerances shows robust operation for the fundamental mode to etching errors up to ±20 nm. A proof-of-concept device provides an initial validation of its operation principle, showing experimental excess losses lower than 0.2 dB in a 195 nm bandwidth for the best-case resolution scenario (i.e., 50 nm).https://www.mdpi.com/2079-4991/11/5/1304photonic integrated circuitssilicon photonicspower divisionbeamsplitterY-junctionsubwavelength metamaterial
spellingShingle Raquel Fernández de Cabo
David González-Andrade
Pavel Cheben
Aitor V. Velasco
High-Performance On-Chip Silicon Beamsplitter Based on Subwavelength Metamaterials for Enhanced Fabrication Tolerance
Nanomaterials
photonic integrated circuits
silicon photonics
power division
beamsplitter
Y-junction
subwavelength metamaterial
title High-Performance On-Chip Silicon Beamsplitter Based on Subwavelength Metamaterials for Enhanced Fabrication Tolerance
title_full High-Performance On-Chip Silicon Beamsplitter Based on Subwavelength Metamaterials for Enhanced Fabrication Tolerance
title_fullStr High-Performance On-Chip Silicon Beamsplitter Based on Subwavelength Metamaterials for Enhanced Fabrication Tolerance
title_full_unstemmed High-Performance On-Chip Silicon Beamsplitter Based on Subwavelength Metamaterials for Enhanced Fabrication Tolerance
title_short High-Performance On-Chip Silicon Beamsplitter Based on Subwavelength Metamaterials for Enhanced Fabrication Tolerance
title_sort high performance on chip silicon beamsplitter based on subwavelength metamaterials for enhanced fabrication tolerance
topic photonic integrated circuits
silicon photonics
power division
beamsplitter
Y-junction
subwavelength metamaterial
url https://www.mdpi.com/2079-4991/11/5/1304
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AT davidgonzalezandrade highperformanceonchipsiliconbeamsplitterbasedonsubwavelengthmetamaterialsforenhancedfabricationtolerance
AT pavelcheben highperformanceonchipsiliconbeamsplitterbasedonsubwavelengthmetamaterialsforenhancedfabricationtolerance
AT aitorvvelasco highperformanceonchipsiliconbeamsplitterbasedonsubwavelengthmetamaterialsforenhancedfabricationtolerance