| Summary: | In this study, we expand a 2D sine map via adding the discrete memristor to introduce a new 3D fractional-order sine-based memristor map. Under commensurate and incommensurate orders, we conduct an extensive exploration and analysis of its nonlinear dynamic behaviors, employing diverse numerical techniques, such as analyzing Lyapunov exponents, visualizing phase portraits, and plotting bifurcation diagrams. The results emphasize the sine-based memristor map’s sensitivity to fractional-order parameters, resulting in the emergence of distinct and diverse dynamic patterns. In addition, we employ the sample entropy (<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi>S</mi><mi>a</mi><mi>m</mi><mi>p</mi><mi>E</mi><mi>n</mi></mrow></semantics></math></inline-formula>) method and <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>C</mi><mn>0</mn></msub></semantics></math></inline-formula> complexity to quantitatively measure complexity, and we also utilize the 0–1 test to validate the presence of chaos in the proposed fractional-order sine-based memristor map. Finally, MATLAB simulations are be executed to confirm the results provided.
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