Influence of strain induced by AlN nucleation layer on the electrical properties of AlGaN/GaN heterostructures on Si(111) substrate

Influence of strain induced by AlN nucleation layer on the electrical properties of AlGaN/GaN heterostructures on Si(111) substrate

The crack-free metal-organic chemical vapor deposition (MOCVD) grown AlGaN/GaN heterostructures on Si substrate with modified growth conditions of AlN nucleation layer (NL) and its influence on the electrical and structural properties of conductive GaN layer are presented. From the Hall electrical m...

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Dades bibliogràfiques
Autors principals:	Dennis Christy, Arata Watanabe, Takashi Egawa
Format:	Article
Idioma:	English
Publicat:	AIP Publishing LLC 2014-10-01
Col·lecció:	AIP Advances
Accés en línia:	http://dx.doi.org/10.1063/1.4897338

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