Influence of strain induced by AlN nucleation layer on the electrical properties of AlGaN/GaN heterostructures on Si(111) substrate

Influence of strain induced by AlN nucleation layer on the electrical properties of AlGaN/GaN heterostructures on Si(111) substrate

The crack-free metal-organic chemical vapor deposition (MOCVD) grown AlGaN/GaN heterostructures on Si substrate with modified growth conditions of AlN nucleation layer (NL) and its influence on the electrical and structural properties of conductive GaN layer are presented. From the Hall electrical m...

Πλήρης περιγραφή

Λεπτομέρειες βιβλιογραφικής εγγραφής
Κύριοι συγγραφείς:	Dennis Christy, Arata Watanabe, Takashi Egawa
Μορφή:	Άρθρο
Γλώσσα:	English
Έκδοση:	AIP Publishing LLC 2014-10-01
Σειρά:	AIP Advances
Διαθέσιμο Online:	http://dx.doi.org/10.1063/1.4897338

Παρόμοια τεκμήρια

Investigation of interface properties of h-BN and AlN on AlGaN/GaN heterostructures
ανά: Whiteside, Matthew David
Έκδοση: (2021)

Toward AlGaN channel HEMTs on AlN: Polarization-induced 2DEGs in AlN/AlGaN/AlN heterostructures
ανά: Jashan Singhal, κ.ά.
Έκδοση: (2022-11-01)

Optical Performance of Two Dimensional Electron Gas and GaN:C Buffer Layers in AlGaN/AlN/GaN Heterostructures on SiC Substrate
ανά: Roman B. Adamov, κ.ά.
Έκδοση: (2021-06-01)

Off-state electrical breakdown of AlGaN/GaN/Ga(Al)N HEMT heterostructure grown on Si(111)
ανά: Shuiming Li, κ.ά.
Έκδοση: (2016-03-01)

Structural and optical properties of AlN/GaN and AlN/AlGaN/GaN thin films on silicon substrate prepared by plasma assisted molecular beam epitaxy (MBE)
ανά: Ho Xin Jing, κ.ά.
Έκδοση: (2019-03-01)

Control of yellow photoluminescence in AlGaN/GaN heterostructures
ανά: Nadezhda B. Gladysheva, κ.ά.
Έκδοση: (2019-06-01)

Influence of the gate position on source-to-drain resistance in AlGaN/AlN/GaN heterostructure field-effect transistors
ανά: Yan Liu, κ.ά.
Έκδοση: (2017-08-01)

High vertical breakdown strength in with low specific on-resistance AlGaN/AlN/GaN HEMTs on silicon
ανά: Vicknesh, S., κ.ά.
Έκδοση: (2014)

AlGaN/AlN heterostructures: an emerging platform for integrated photonics
ανά: Sinan Gündoğdu, κ.ά.
Έκδοση: (2025-01-01)

Atomic-column resolution quantitative composition analysis of AlN interlayer in MOCVD-grown AlGaN/AlN/GaN heterostructure using HAADF-STEM
ανά: Q. Li, κ.ά.
Έκδοση: (2023-01-01)

Nucleation and growth of GaN/AlN quantum dots
ανά: Adelmann, C, κ.ά.
Έκδοση: (2004)

Growth and characterization of AlGaN/GaN HEMT heterostructures on 100-mm Si (111) by MBE
ανά: Manvi Agrawal
Έκδοση: (2013)

Study of Interface of Ohmic Contacts to AlGaN/GaN Heterostructure
ανά: Joanna Prazmowska, κ.ά.
Έκδοση: (2016-01-01)

Improvement Performance of p-GaN Gate High-Electron-Mobility Transistors with GaN/AlN/AlGaN Barrier Structure
ανά: An-Chen Liu, κ.ά.
Έκδοση: (2024-04-01)

AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)
ανά: Dolmanan, S. B., κ.ά.
Έκδοση: (2013)

The Effect of the Barrier Layer on the Uniformity of the Transport Characteristics of AlGaN/GaN Heterostructures on HR-Si(111)
ανά: Yujie Yan, κ.ά.
Έκδοση: (2024-04-01)

Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs
ανά: Tzu-Hsuan Chang, κ.ά.
Έκδοση: (2017-07-01)

MOCVD Growth and Investigation of InGaN/GaN Heterostructure Grown on AlGaN/GaN-on-Si Template
ανά: Haruka Matsuura, κ.ά.
Έκδοση: (2019-04-01)

Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate
ανά: Adarsh Nigam, κ.ά.
Έκδοση: (2017-08-01)

Growth and Device Performance of AlGaN/GaN Heterostructure with AlSiC Precoverage on Silicon Substrate
ανά: Jae-Hoon Lee, κ.ά.
Έκδοση: (2014-01-01)

Temperature Dependence of the Energy Band Diagram of AlGaN/GaN Heterostructure
ανά: Yanli Liu, κ.ά.
Έκδοση: (2018-01-01)

AlGaN/GaN heterostructure based 3-dimensional force sensors
ανά: Péter Lajos Neumann, κ.ά.
Έκδοση: (2023-06-01)

Study of Scandium Based Ohmic Contacts to AlGaN/GaN Heterostructures
ανά: Grzegorz Ilgiewicz, κ.ά.
Έκδοση: (2021-01-01)

Study of the effect of passivation layers on capacitance of AlGaN/GaN heterostructures
ανά: Kira L. Enisherlova, κ.ά.
Έκδοση: (2016-12-01)

Role of Self-Heating and Polarization in AlGaN/GaN-Based Heterostructures
ανά: Khaled Ahmeda, κ.ά.
Έκδοση: (2017-01-01)

Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates
ανά: Chong-Rong Huang, κ.ά.
Έκδοση: (2021-10-01)

Cutoff frequency increase of gate recessed AlGaN/GaN MISHFETs with amorphous AlN insulator
ανά: Peter Kordoš, κ.ά.
Έκδοση: (2025-02-01)

Optical and Electrical Properties of AlGaN-Based High Electron Mobility Transistors and Photodetectors with AlGaN/AlN/GaN Channel-Stacking Structure
ανά: Chia-Feng Lin, κ.ά.
Έκδοση: (2024-05-01)

Polariton lasing in AlGaN microring with GaN/AlGaN quantum wells
ανά: Anthonin Delphan, κ.ά.
Έκδοση: (2023-02-01)

Breakdown mechanism in AlGaN/GaN HEMTs on Si substrate
ανά: Lu, Bin, κ.ά.
Έκδοση: (2012)

Analysis of electrical properties in lateral Schottky barrier diode based on n-GaN and AlGaN/GaN heterostructure
ανά: Honghui Liu, κ.ά.
Έκδοση: (2022-11-01)

2DEG enhancement via epilayer stress engineering in AlN/GaN/AlN heterostructure
ανά: Patwal, Shashank
Έκδοση: (2021)

Effect of post-deposition annealing on the interface electronic structures of Al2O3-Capped GaN and GaN/AlGaN/GaN heterostructure
ανά: Duan, Tian Li, κ.ά.
Έκδοση: (2019)

Enhanced breakdown voltage for p-GaN gate AlGaN/GaN HEMT on AlN/Si with triple trenches: A simulation study
ανά: Muhaimin Haziq, κ.ά.
Έκδοση: (2024-09-01)

Effects of heavy Si doping on the structural and optical properties of n-GaN/AlN/Si(111) heterostructures
ανά: M A Zambrano-Serrano, κ.ά.
Έκδοση: (2022-01-01)

Demonstration of AlGaN/GaN MISHEMT on Si with low-temperature epitaxy grown AlN dielectric gate
ανά: Whiteside, Matthew, κ.ά.
Έκδοση: (2021)

Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si
ανά: Liu, Siyu, κ.ά.
Έκδοση: (2024)

Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact
ανά: Yannick Baines, κ.ά.
Έκδοση: (2017-08-01)

Structural properties of GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxy
ανά: Agrawal, M., κ.ά.
Έκδοση: (2013)

Use of Laser Interferometry to Determine the End Time of the Plasma-Chemical Etching of p-GaN and AlGaN Layers of the p-GaN/AlGaN/GaN Heterostructure with Two-Dimensional Electron Gas
ανά: A. D. Yunik, κ.ά.
Έκδοση: (2022-12-01)