Influence of strain induced by AlN nucleation layer on the electrical properties of AlGaN/GaN heterostructures on Si(111) substrate

Influence of strain induced by AlN nucleation layer on the electrical properties of AlGaN/GaN heterostructures on Si(111) substrate

The crack-free metal-organic chemical vapor deposition (MOCVD) grown AlGaN/GaN heterostructures on Si substrate with modified growth conditions of AlN nucleation layer (NL) and its influence on the electrical and structural properties of conductive GaN layer are presented. From the Hall electrical m...

Cur síos iomlán

Sonraí bibleagrafaíochta
Príomhchruthaitheoirí:	Dennis Christy, Arata Watanabe, Takashi Egawa
Formáid:	Alt
Teanga:	English
Foilsithe / Cruthaithe:	AIP Publishing LLC 2014-10-01
Sraith:	AIP Advances
Rochtain ar líne:	http://dx.doi.org/10.1063/1.4897338

Míreanna comhchosúla

Investigation of interface properties of h-BN and AlN on AlGaN/GaN heterostructures
de réir: Whiteside, Matthew David
Foilsithe / Cruthaithe: (2021)

Toward AlGaN channel HEMTs on AlN: Polarization-induced 2DEGs in AlN/AlGaN/AlN heterostructures
de réir: Jashan Singhal, et al.
Foilsithe / Cruthaithe: (2022-11-01)

Optical Performance of Two Dimensional Electron Gas and GaN:C Buffer Layers in AlGaN/AlN/GaN Heterostructures on SiC Substrate
de réir: Roman B. Adamov, et al.
Foilsithe / Cruthaithe: (2021-06-01)

Off-state electrical breakdown of AlGaN/GaN/Ga(Al)N HEMT heterostructure grown on Si(111)
de réir: Shuiming Li, et al.
Foilsithe / Cruthaithe: (2016-03-01)

Structural and optical properties of AlN/GaN and AlN/AlGaN/GaN thin films on silicon substrate prepared by plasma assisted molecular beam epitaxy (MBE)
de réir: Ho Xin Jing, et al.
Foilsithe / Cruthaithe: (2019-03-01)

Control of yellow photoluminescence in AlGaN/GaN heterostructures
de réir: Nadezhda B. Gladysheva, et al.
Foilsithe / Cruthaithe: (2019-06-01)

Influence of the gate position on source-to-drain resistance in AlGaN/AlN/GaN heterostructure field-effect transistors
de réir: Yan Liu, et al.
Foilsithe / Cruthaithe: (2017-08-01)

High vertical breakdown strength in with low specific on-resistance AlGaN/AlN/GaN HEMTs on silicon
de réir: Vicknesh, S., et al.
Foilsithe / Cruthaithe: (2014)

AlGaN/AlN heterostructures: an emerging platform for integrated photonics
de réir: Sinan Gündoğdu, et al.
Foilsithe / Cruthaithe: (2025-01-01)

Atomic-column resolution quantitative composition analysis of AlN interlayer in MOCVD-grown AlGaN/AlN/GaN heterostructure using HAADF-STEM
de réir: Q. Li, et al.
Foilsithe / Cruthaithe: (2023-01-01)

Nucleation and growth of GaN/AlN quantum dots
de réir: Adelmann, C, et al.
Foilsithe / Cruthaithe: (2004)

Growth and characterization of AlGaN/GaN HEMT heterostructures on 100-mm Si (111) by MBE
de réir: Manvi Agrawal
Foilsithe / Cruthaithe: (2013)

Study of Interface of Ohmic Contacts to AlGaN/GaN Heterostructure
de réir: Joanna Prazmowska, et al.
Foilsithe / Cruthaithe: (2016-01-01)

Improvement Performance of p-GaN Gate High-Electron-Mobility Transistors with GaN/AlN/AlGaN Barrier Structure
de réir: An-Chen Liu, et al.
Foilsithe / Cruthaithe: (2024-04-01)

AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)
de réir: Dolmanan, S. B., et al.
Foilsithe / Cruthaithe: (2013)

The Effect of the Barrier Layer on the Uniformity of the Transport Characteristics of AlGaN/GaN Heterostructures on HR-Si(111)
de réir: Yujie Yan, et al.
Foilsithe / Cruthaithe: (2024-04-01)

Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs
de réir: Tzu-Hsuan Chang, et al.
Foilsithe / Cruthaithe: (2017-07-01)

MOCVD Growth and Investigation of InGaN/GaN Heterostructure Grown on AlGaN/GaN-on-Si Template
de réir: Haruka Matsuura, et al.
Foilsithe / Cruthaithe: (2019-04-01)

Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate
de réir: Adarsh Nigam, et al.
Foilsithe / Cruthaithe: (2017-08-01)

Growth and Device Performance of AlGaN/GaN Heterostructure with AlSiC Precoverage on Silicon Substrate
de réir: Jae-Hoon Lee, et al.
Foilsithe / Cruthaithe: (2014-01-01)

Temperature Dependence of the Energy Band Diagram of AlGaN/GaN Heterostructure
de réir: Yanli Liu, et al.
Foilsithe / Cruthaithe: (2018-01-01)

AlGaN/GaN heterostructure based 3-dimensional force sensors
de réir: Péter Lajos Neumann, et al.
Foilsithe / Cruthaithe: (2023-06-01)

Study of Scandium Based Ohmic Contacts to AlGaN/GaN Heterostructures
de réir: Grzegorz Ilgiewicz, et al.
Foilsithe / Cruthaithe: (2021-01-01)

Study of the effect of passivation layers on capacitance of AlGaN/GaN heterostructures
de réir: Kira L. Enisherlova, et al.
Foilsithe / Cruthaithe: (2016-12-01)

Role of Self-Heating and Polarization in AlGaN/GaN-Based Heterostructures
de réir: Khaled Ahmeda, et al.
Foilsithe / Cruthaithe: (2017-01-01)

Characteristic Analysis of AlGaN/GaN HEMT with Composited Buffer Layer on High-Heat Dissipation Poly-AlN Substrates
de réir: Chong-Rong Huang, et al.
Foilsithe / Cruthaithe: (2021-10-01)

Cutoff frequency increase of gate recessed AlGaN/GaN MISHFETs with amorphous AlN insulator
de réir: Peter Kordoš, et al.
Foilsithe / Cruthaithe: (2025-02-01)

Optical and Electrical Properties of AlGaN-Based High Electron Mobility Transistors and Photodetectors with AlGaN/AlN/GaN Channel-Stacking Structure
de réir: Chia-Feng Lin, et al.
Foilsithe / Cruthaithe: (2024-05-01)

Polariton lasing in AlGaN microring with GaN/AlGaN quantum wells
de réir: Anthonin Delphan, et al.
Foilsithe / Cruthaithe: (2023-02-01)

Breakdown mechanism in AlGaN/GaN HEMTs on Si substrate
de réir: Lu, Bin, et al.
Foilsithe / Cruthaithe: (2012)

Analysis of electrical properties in lateral Schottky barrier diode based on n-GaN and AlGaN/GaN heterostructure
de réir: Honghui Liu, et al.
Foilsithe / Cruthaithe: (2022-11-01)

2DEG enhancement via epilayer stress engineering in AlN/GaN/AlN heterostructure
de réir: Patwal, Shashank
Foilsithe / Cruthaithe: (2021)

Effect of post-deposition annealing on the interface electronic structures of Al2O3-Capped GaN and GaN/AlGaN/GaN heterostructure
de réir: Duan, Tian Li, et al.
Foilsithe / Cruthaithe: (2019)

Enhanced breakdown voltage for p-GaN gate AlGaN/GaN HEMT on AlN/Si with triple trenches: A simulation study
de réir: Muhaimin Haziq, et al.
Foilsithe / Cruthaithe: (2024-09-01)

Effects of heavy Si doping on the structural and optical properties of n-GaN/AlN/Si(111) heterostructures
de réir: M A Zambrano-Serrano, et al.
Foilsithe / Cruthaithe: (2022-01-01)

Demonstration of AlGaN/GaN MISHEMT on Si with low-temperature epitaxy grown AlN dielectric gate
de réir: Whiteside, Matthew, et al.
Foilsithe / Cruthaithe: (2021)

Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si
de réir: Liu, Siyu, et al.
Foilsithe / Cruthaithe: (2024)

Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact
de réir: Yannick Baines, et al.
Foilsithe / Cruthaithe: (2017-08-01)

Structural properties of GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxy
de réir: Agrawal, M., et al.
Foilsithe / Cruthaithe: (2013)

Use of Laser Interferometry to Determine the End Time of the Plasma-Chemical Etching of p-GaN and AlGaN Layers of the p-GaN/AlGaN/GaN Heterostructure with Two-Dimensional Electron Gas
de réir: A. D. Yunik, et al.
Foilsithe / Cruthaithe: (2022-12-01)