Influence of strain induced by AlN nucleation layer on the electrical properties of AlGaN/GaN heterostructures on Si(111) substrate

Influence of strain induced by AlN nucleation layer on the electrical properties of AlGaN/GaN heterostructures on Si(111) substrate

The crack-free metal-organic chemical vapor deposition (MOCVD) grown AlGaN/GaN heterostructures on Si substrate with modified growth conditions of AlN nucleation layer (NL) and its influence on the electrical and structural properties of conductive GaN layer are presented. From the Hall electrical m...

תיאור מלא

מידע ביבליוגרפי
Main Authors:	Dennis Christy, Arata Watanabe, Takashi Egawa
פורמט:	Article
שפה:	English
יצא לאור:	AIP Publishing LLC 2014-10-01
סדרה:	AIP Advances
גישה מקוונת:	http://dx.doi.org/10.1063/1.4897338

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