Influence of strain induced by AlN nucleation layer on the electrical properties of AlGaN/GaN heterostructures on Si(111) substrate
The crack-free metal-organic chemical vapor deposition (MOCVD) grown AlGaN/GaN heterostructures on Si substrate with modified growth conditions of AlN nucleation layer (NL) and its influence on the electrical and structural properties of conductive GaN layer are presented. From the Hall electrical m...
| Autors principals: | , , |
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| Format: | Article |
| Idioma: | English |
| Publicat: |
AIP Publishing LLC
2014-10-01
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| Col·lecció: | AIP Advances |
| Accés en línia: | http://dx.doi.org/10.1063/1.4897338 |