Polarisation analysing complementary metal-oxide semiconductor image sensor in 65-nm standard CMOS technology
In the present study, the authors demonstrate a complementary metal-oxide semiconductor (CMOS) image sensor implemented with on-chip polarisers using 65-nm standard CMOS technology. The polariser is composed of metal wire grids made of metal wires fabricated by the CMOS process. An extinction ratio...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2013-09-01
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| Series: | The Journal of Engineering |
| Subjects: | |
| Online Access: | http://digital-library.theiet.org/content/journals/10.1049/joe.2013.0033 |
| Summary: | In the present study, the authors demonstrate a complementary metal-oxide semiconductor (CMOS) image sensor implemented with on-chip polarisers using 65-nm standard CMOS technology. The polariser is composed of metal wire grids made of metal wires fabricated by the CMOS process. An extinction ratio of 18.8 dB was obtained for a single pixel with an on-chip polariser, where the line/space widths have the finest pitch obtainable by 65-nm technology. Electrical crosstalk between pixels is reduced by over 25% using a guard ring structure. Polarisation imaging by the sensor was also performed. |
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| ISSN: | 2051-3305 |