Polarisation analysing complementary metal-oxide semiconductor image sensor in 65-nm standard CMOS technology
In the present study, the authors demonstrate a complementary metal-oxide semiconductor (CMOS) image sensor implemented with on-chip polarisers using 65-nm standard CMOS technology. The polariser is composed of metal wire grids made of metal wires fabricated by the CMOS process. An extinction ratio...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2013-09-01
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| Series: | The Journal of Engineering |
| Subjects: | |
| Online Access: | http://digital-library.theiet.org/content/journals/10.1049/joe.2013.0033 |
| _version_ | 1818614141803298816 |
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| author | N. Wakama D. Okabayashi T. Noda K. Sasagawa T. Tokuda K. Kakiuchi J. Ohta |
| author_facet | N. Wakama D. Okabayashi T. Noda K. Sasagawa T. Tokuda K. Kakiuchi J. Ohta |
| author_sort | N. Wakama |
| collection | DOAJ |
| description | In the present study, the authors demonstrate a complementary metal-oxide semiconductor (CMOS) image sensor implemented with on-chip polarisers using 65-nm standard CMOS technology. The polariser is composed of metal wire grids made of metal wires fabricated by the CMOS process. An extinction ratio of 18.8 dB was obtained for a single pixel with an on-chip polariser, where the line/space widths have the finest pitch obtainable by 65-nm technology. Electrical crosstalk between pixels is reduced by over 25% using a guard ring structure. Polarisation imaging by the sensor was also performed. |
| first_indexed | 2024-12-16T16:13:18Z |
| format | Article |
| id | doaj.art-7b9bbf75b09f43ce8c10f62d095ed2c3 |
| institution | Directory Open Access Journal |
| issn | 2051-3305 |
| language | English |
| last_indexed | 2024-12-16T16:13:18Z |
| publishDate | 2013-09-01 |
| publisher | Wiley |
| record_format | Article |
| series | The Journal of Engineering |
| spelling | doaj.art-7b9bbf75b09f43ce8c10f62d095ed2c32022-12-21T22:25:09ZengWileyThe Journal of Engineering2051-33052013-09-0110.1049/joe.2013.0033Polarisation analysing complementary metal-oxide semiconductor image sensor in 65-nm standard CMOS technologyN. WakamaD. OkabayashiT. NodaK. SasagawaT. TokudaK. KakiuchiJ. OhtaIn the present study, the authors demonstrate a complementary metal-oxide semiconductor (CMOS) image sensor implemented with on-chip polarisers using 65-nm standard CMOS technology. The polariser is composed of metal wire grids made of metal wires fabricated by the CMOS process. An extinction ratio of 18.8 dB was obtained for a single pixel with an on-chip polariser, where the line/space widths have the finest pitch obtainable by 65-nm technology. Electrical crosstalk between pixels is reduced by over 25% using a guard ring structure. Polarisation imaging by the sensor was also performed.http://digital-library.theiet.org/content/journals/10.1049/joe.2013.0033CMOS image sensorscomplementary metal-oxide semiconductor image sensorCMOS image sensoron-chip polarisersmetal wire gridsline-space widthselectrical crosstalkguard ring structurepolarisation imagingsize 65 nm |
| spellingShingle | N. Wakama D. Okabayashi T. Noda K. Sasagawa T. Tokuda K. Kakiuchi J. Ohta Polarisation analysing complementary metal-oxide semiconductor image sensor in 65-nm standard CMOS technology The Journal of Engineering CMOS image sensors complementary metal-oxide semiconductor image sensor CMOS image sensor on-chip polarisers metal wire grids line-space widths electrical crosstalk guard ring structure polarisation imaging size 65 nm |
| title | Polarisation analysing complementary metal-oxide semiconductor image sensor in 65-nm standard CMOS technology |
| title_full | Polarisation analysing complementary metal-oxide semiconductor image sensor in 65-nm standard CMOS technology |
| title_fullStr | Polarisation analysing complementary metal-oxide semiconductor image sensor in 65-nm standard CMOS technology |
| title_full_unstemmed | Polarisation analysing complementary metal-oxide semiconductor image sensor in 65-nm standard CMOS technology |
| title_short | Polarisation analysing complementary metal-oxide semiconductor image sensor in 65-nm standard CMOS technology |
| title_sort | polarisation analysing complementary metal oxide semiconductor image sensor in 65 nm standard cmos technology |
| topic | CMOS image sensors complementary metal-oxide semiconductor image sensor CMOS image sensor on-chip polarisers metal wire grids line-space widths electrical crosstalk guard ring structure polarisation imaging size 65 nm |
| url | http://digital-library.theiet.org/content/journals/10.1049/joe.2013.0033 |
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