Multiple Wavelength InGaAs Quantum Dot Lasers Using Ion Implantation Induced Intermixing
<p>Abstract</p><p>We demonstrate multiple wavelength InGaAs quantum dot lasers using ion implantation induced intermixing. Proton implantation, followed by annealing is used to create differential interdiffusion in the active region of the devices. The characteristics (lasing-spect...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2007-01-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1007/s11671-007-9097-x |
| _version_ | 1827836595464568832 |
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| author | Buda M Mokkapati S Du Sichao Fu L Tan HH Jagadish C |
| author_facet | Buda M Mokkapati S Du Sichao Fu L Tan HH Jagadish C |
| author_sort | Buda M |
| collection | DOAJ |
| description | <p>Abstract</p><p>We demonstrate multiple wavelength InGaAs quantum dot lasers using ion implantation induced intermixing. Proton implantation, followed by annealing is used to create differential interdiffusion in the active region of the devices. The characteristics (lasing-spectra, threshold currents and slope efficiencies) of the multi-wavelength devices are compared to those of as-grown devices and the differences are explained in terms of altered energy level spacing in the annealed quantum dots.</p> |
| first_indexed | 2024-03-12T06:29:03Z |
| format | Article |
| id | doaj.art-7ba2a63c2d3a46598969878f32414a4e |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T06:29:03Z |
| publishDate | 2007-01-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-7ba2a63c2d3a46598969878f32414a4e2023-09-03T01:43:53ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2007-01-01211550553Multiple Wavelength InGaAs Quantum Dot Lasers Using Ion Implantation Induced IntermixingBuda MMokkapati SDu SichaoFu LTan HHJagadish C<p>Abstract</p><p>We demonstrate multiple wavelength InGaAs quantum dot lasers using ion implantation induced intermixing. Proton implantation, followed by annealing is used to create differential interdiffusion in the active region of the devices. The characteristics (lasing-spectra, threshold currents and slope efficiencies) of the multi-wavelength devices are compared to those of as-grown devices and the differences are explained in terms of altered energy level spacing in the annealed quantum dots.</p>http://dx.doi.org/10.1007/s11671-007-9097-xQuantum dot lasersIon implantation |
| spellingShingle | Buda M Mokkapati S Du Sichao Fu L Tan HH Jagadish C Multiple Wavelength InGaAs Quantum Dot Lasers Using Ion Implantation Induced Intermixing Nanoscale Research Letters Quantum dot lasers Ion implantation |
| title | Multiple Wavelength InGaAs Quantum Dot Lasers Using Ion Implantation Induced Intermixing |
| title_full | Multiple Wavelength InGaAs Quantum Dot Lasers Using Ion Implantation Induced Intermixing |
| title_fullStr | Multiple Wavelength InGaAs Quantum Dot Lasers Using Ion Implantation Induced Intermixing |
| title_full_unstemmed | Multiple Wavelength InGaAs Quantum Dot Lasers Using Ion Implantation Induced Intermixing |
| title_short | Multiple Wavelength InGaAs Quantum Dot Lasers Using Ion Implantation Induced Intermixing |
| title_sort | multiple wavelength ingaas quantum dot lasers using ion implantation induced intermixing |
| topic | Quantum dot lasers Ion implantation |
| url | http://dx.doi.org/10.1007/s11671-007-9097-x |
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