Multiple Wavelength InGaAs Quantum Dot Lasers Using Ion Implantation Induced Intermixing

Multiple Wavelength InGaAs Quantum Dot Lasers Using Ion Implantation Induced Intermixing

<p>Abstract</p><p>We demonstrate multiple wavelength InGaAs quantum dot lasers using ion implantation induced intermixing. Proton implantation, followed by annealing is used to create differential interdiffusion in the active region of the devices. The characteristics (lasing-spect...

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Bibliographic Details
Main Authors: Buda M, Mokkapati S, Du Sichao, Fu L, Tan HH, Jagadish C
Format: Article
Language:English
Published: SpringerOpen 2007-01-01
Series:Nanoscale Research Letters
Subjects:
Quantum dot lasers
Ion implantation
Online Access:http://dx.doi.org/10.1007/s11671-007-9097-x

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