Linear Characterization and Modeling of GaN-on-Si HEMT Technologies with 100 nm and 60 nm Gate Lengths

Linear Characterization and Modeling of GaN-on-Si HEMT Technologies with 100 nm and 60 nm Gate Lengths

Motivated by the growing interest towards low-cost, restriction-free MMIC processes suitable for multi-function, possibly space-qualified applications, this contribution reports the extraction of reliable linear models for two advanced GaN-on-Si HEMT technologies, namely OMMIC’s D01GH (100 nm gate l...

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Bibliographic Details
Main Authors: Sergio Colangeli, Walter Ciccognani, Patrick Ettore Longhi, Lorenzo Pace, Julien Poulain, Rémy Leblanc, Ernesto Limiti
Format: Article
Language:English
Published: MDPI AG 2021-01-01
Series:Electronics
Subjects:
gallium nitride on silicon
HEMT
characterization
modeling
scalable SSEC
noise temperatures
Online Access:https://www.mdpi.com/2079-9292/10/2/134

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