Three-Dimensional MoS<sub>2</sub> Nanosheet Structures: CVD Synthesis, Characterization, and Electrical Properties
The proposed study demonstrates a single-step CVD method for synthesizing three-dimensional vertical MoS<sub>2</sub> nanosheets. The postulated synthesizing approach employs a temperature ramp with a continuous N<sub>2</sub> gas flow during the deposition process. The distinc...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-03-01
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| Series: | Crystals |
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| Online Access: | https://www.mdpi.com/2073-4352/13/3/448 |
| _version_ | 1797612484636442624 |
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| author | Sobin Mathew Johannes Reiprich Shilpashree Narasimha Saadman Abedin Vladislav Kurtash Sebastian Thiele Bernd Hähnlein Theresa Scheler Dominik Flock Heiko O. Jacobs Jörg Pezoldt |
| author_facet | Sobin Mathew Johannes Reiprich Shilpashree Narasimha Saadman Abedin Vladislav Kurtash Sebastian Thiele Bernd Hähnlein Theresa Scheler Dominik Flock Heiko O. Jacobs Jörg Pezoldt |
| author_sort | Sobin Mathew |
| collection | DOAJ |
| description | The proposed study demonstrates a single-step CVD method for synthesizing three-dimensional vertical MoS<sub>2</sub> nanosheets. The postulated synthesizing approach employs a temperature ramp with a continuous N<sub>2</sub> gas flow during the deposition process. The distinctive signals of MoS<sub>2</sub> were revealed via Raman spectroscopy study, and the substantial frequency difference in the characteristic signals supported the bulk nature of the synthesized material. Additionally, XRD measurements sustained the material’s crystallinity and its 2H-MoS<sub>2</sub> nature. The FIB cross-sectional analysis provided information on the origin and evolution of the vertical MoS<sub>2</sub> structures and their growth mechanisms. The strain energy produced by the compression between MoS<sub>2</sub> islands is assumed to primarily drive the formation of vertical MoS<sub>2</sub> nanosheets. In addition, vertical MoS<sub>2</sub> structures that emerge from micro fissures (cracks) on individual MoS<sub>2</sub> islands were observed and examined. For the evaluation of electrical properties, field-effect transistor structures were fabricated on the synthesized material employing standard semiconductor technology. The lateral back-gated field-effect transistors fabricated on the synthesized material showed an n-type behavior with field-effect mobility of 1.46 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup> and an estimated carrier concentration of 4.5 × 10<sup>12</sup> cm<sup>−2</sup>. Furthermore, the effects of a back-gate voltage bias and channel dimensions on the hysteresis effect of FET devices were investigated and quantified. |
| first_indexed | 2024-03-11T06:42:51Z |
| format | Article |
| id | doaj.art-7bf73cb7bd864fccba7f84884aad79b8 |
| institution | Directory Open Access Journal |
| issn | 2073-4352 |
| language | English |
| last_indexed | 2024-03-11T06:42:51Z |
| publishDate | 2023-03-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Crystals |
| spelling | doaj.art-7bf73cb7bd864fccba7f84884aad79b82023-11-17T10:28:55ZengMDPI AGCrystals2073-43522023-03-0113344810.3390/cryst13030448Three-Dimensional MoS<sub>2</sub> Nanosheet Structures: CVD Synthesis, Characterization, and Electrical PropertiesSobin Mathew0Johannes Reiprich1Shilpashree Narasimha2Saadman Abedin3Vladislav Kurtash4Sebastian Thiele5Bernd Hähnlein6Theresa Scheler7Dominik Flock8Heiko O. Jacobs9Jörg Pezoldt10FG-Nanotechnologie, Institut für Mikro-und Nanoelektronik, Institut für Mikro-und Nanotechnologien MacroNano<sup>®</sup>, Institut für Werkstofftechnik, TU Ilmenau, Postfach 100565, 98684 Ilmenau, GermanyFG-Nanotechnologie, Institut für Mikro-und Nanoelektronik, Institut für Mikro-und Nanotechnologien MacroNano<sup>®</sup>, Institut für Werkstofftechnik, TU Ilmenau, Postfach 100565, 98684 Ilmenau, GermanyFG-Nanotechnologie, Institut für Mikro-und Nanoelektronik, Institut für Mikro-und Nanotechnologien MacroNano<sup>®</sup>, Institut für Werkstofftechnik, TU Ilmenau, Postfach 100565, 98684 Ilmenau, GermanyFG-Nanotechnologie, Institut für Mikro-und Nanoelektronik, Institut für Mikro-und Nanotechnologien MacroNano<sup>®</sup>, Institut für Werkstofftechnik, TU Ilmenau, Postfach 100565, 98684 Ilmenau, GermanyFG-Nanotechnologie, Institut für Mikro-und Nanoelektronik, Institut für Mikro-und Nanotechnologien MacroNano<sup>®</sup>, Institut für Werkstofftechnik, TU Ilmenau, Postfach 100565, 98684 Ilmenau, GermanyFG-Nanotechnologie, Institut für Mikro-und Nanoelektronik, Institut für Mikro-und Nanotechnologien MacroNano<sup>®</sup>, Institut für Werkstofftechnik, TU Ilmenau, Postfach 100565, 98684 Ilmenau, GermanyFG Technische Physik I, Institut für Physik, Institut für Mikro-und Nanotechnologien MacroNano<sup>®</sup>, Technische Universität Ilmenau, 98684 Ilmenau, GermanyFG-Werkstoffe der Elektrotechnik, Institut für Werkstofftechnik, Institut für Mikro- und Nanotechnologien MacroNano<sup>®</sup>, TU Ilmenau, Gustav-Kirchhoff-Straße 5, 98693 Ilmenau, GermanyFG-Werkstoffe der Elektrotechnik, Institut für Werkstofftechnik, Institut für Mikro- und Nanotechnologien MacroNano<sup>®</sup>, TU Ilmenau, Gustav-Kirchhoff-Straße 5, 98693 Ilmenau, GermanyFG-Nanotechnologie, Institut für Mikro-und Nanoelektronik, Institut für Mikro-und Nanotechnologien MacroNano<sup>®</sup>, Institut für Werkstofftechnik, TU Ilmenau, Postfach 100565, 98684 Ilmenau, GermanyFG-Nanotechnologie, Institut für Mikro-und Nanoelektronik, Institut für Mikro-und Nanotechnologien MacroNano<sup>®</sup>, Institut für Werkstofftechnik, TU Ilmenau, Postfach 100565, 98684 Ilmenau, GermanyThe proposed study demonstrates a single-step CVD method for synthesizing three-dimensional vertical MoS<sub>2</sub> nanosheets. The postulated synthesizing approach employs a temperature ramp with a continuous N<sub>2</sub> gas flow during the deposition process. The distinctive signals of MoS<sub>2</sub> were revealed via Raman spectroscopy study, and the substantial frequency difference in the characteristic signals supported the bulk nature of the synthesized material. Additionally, XRD measurements sustained the material’s crystallinity and its 2H-MoS<sub>2</sub> nature. The FIB cross-sectional analysis provided information on the origin and evolution of the vertical MoS<sub>2</sub> structures and their growth mechanisms. The strain energy produced by the compression between MoS<sub>2</sub> islands is assumed to primarily drive the formation of vertical MoS<sub>2</sub> nanosheets. In addition, vertical MoS<sub>2</sub> structures that emerge from micro fissures (cracks) on individual MoS<sub>2</sub> islands were observed and examined. For the evaluation of electrical properties, field-effect transistor structures were fabricated on the synthesized material employing standard semiconductor technology. The lateral back-gated field-effect transistors fabricated on the synthesized material showed an n-type behavior with field-effect mobility of 1.46 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup> and an estimated carrier concentration of 4.5 × 10<sup>12</sup> cm<sup>−2</sup>. Furthermore, the effects of a back-gate voltage bias and channel dimensions on the hysteresis effect of FET devices were investigated and quantified.https://www.mdpi.com/2073-4352/13/3/448molybdenum disulfidevertical nanosheetfield-effect transistorshysteresis area |
| spellingShingle | Sobin Mathew Johannes Reiprich Shilpashree Narasimha Saadman Abedin Vladislav Kurtash Sebastian Thiele Bernd Hähnlein Theresa Scheler Dominik Flock Heiko O. Jacobs Jörg Pezoldt Three-Dimensional MoS<sub>2</sub> Nanosheet Structures: CVD Synthesis, Characterization, and Electrical Properties Crystals molybdenum disulfide vertical nanosheet field-effect transistors hysteresis area |
| title | Three-Dimensional MoS<sub>2</sub> Nanosheet Structures: CVD Synthesis, Characterization, and Electrical Properties |
| title_full | Three-Dimensional MoS<sub>2</sub> Nanosheet Structures: CVD Synthesis, Characterization, and Electrical Properties |
| title_fullStr | Three-Dimensional MoS<sub>2</sub> Nanosheet Structures: CVD Synthesis, Characterization, and Electrical Properties |
| title_full_unstemmed | Three-Dimensional MoS<sub>2</sub> Nanosheet Structures: CVD Synthesis, Characterization, and Electrical Properties |
| title_short | Three-Dimensional MoS<sub>2</sub> Nanosheet Structures: CVD Synthesis, Characterization, and Electrical Properties |
| title_sort | three dimensional mos sub 2 sub nanosheet structures cvd synthesis characterization and electrical properties |
| topic | molybdenum disulfide vertical nanosheet field-effect transistors hysteresis area |
| url | https://www.mdpi.com/2073-4352/13/3/448 |
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