Photoluminescence and Electrical Properties of n-Ce-Doped ZnO Nanoleaf/p-Diamond Heterojunction

Photoluminescence and Electrical Properties of n-Ce-Doped ZnO Nanoleaf/p-Diamond Heterojunction

The n-type Ce:ZnO (NL) grown using a hydrothermal method was deposited on a p-type boron-doped nanoleaf diamond (BDD) film to fabricate an n-Ce:ZnO NL/p-BDD heterojunction. It shows a significant enhancement in photoluminescence (PL) intensity and a more pronounced blue shift of the UV emission peak...

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Bibliographic Details
Main Authors: Qinglin Wang, Yu Yao, Xianhe Sang, Liangrui Zou, Shunhao Ge, Xueting Wang, Dong Zhang, Qingru Wang, Huawei Zhou, Jianchao Fan, Dandan Sang
Format: Article
Language:English
Published: MDPI AG 2022-10-01
Series:Nanomaterials
Subjects:
Ce-doped ZnO NLs
boron-doped diamond
heterojunction
photoluminescence
electrical transport behavior
high temperature
Online Access:https://www.mdpi.com/2079-4991/12/21/3773
Description
Summary:The n-type Ce:ZnO (NL) grown using a hydrothermal method was deposited on a p-type boron-doped nanoleaf diamond (BDD) film to fabricate an n-Ce:ZnO NL/p-BDD heterojunction. It shows a significant enhancement in photoluminescence (PL) intensity and a more pronounced blue shift of the UV emission peak (from 385 nm to 365 nm) compared with the undoped heterojunction (n-ZnO/p-BDD). The prepared heterojunction devices demonstrate good thermal stability and excellent rectification characteristics at different temperatures. As the temperature increases, the turn-on voltage and ideal factor (<i>n</i>) of the device gradually decrease. The electronic transport behaviors depending on temperature of the heterojunction at different bias voltages are discussed using an equilibrium band diagram and semiconductor theoretical model.
ISSN:2079-4991

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