Photoluminescence and Electrical Properties of n-Ce-Doped ZnO Nanoleaf/p-Diamond Heterojunction

Photoluminescence and Electrical Properties of n-Ce-Doped ZnO Nanoleaf/p-Diamond Heterojunction

The n-type Ce:ZnO (NL) grown using a hydrothermal method was deposited on a p-type boron-doped nanoleaf diamond (BDD) film to fabricate an n-Ce:ZnO NL/p-BDD heterojunction. It shows a significant enhancement in photoluminescence (PL) intensity and a more pronounced blue shift of the UV emission peak...

Full description

Bibliographic Details
Main Authors: Qinglin Wang, Yu Yao, Xianhe Sang, Liangrui Zou, Shunhao Ge, Xueting Wang, Dong Zhang, Qingru Wang, Huawei Zhou, Jianchao Fan, Dandan Sang
Format: Article
Language:English
Published: MDPI AG 2022-10-01
Series:Nanomaterials
Subjects:
Ce-doped ZnO NLs
boron-doped diamond
heterojunction
photoluminescence
electrical transport behavior
high temperature
Online Access:https://www.mdpi.com/2079-4991/12/21/3773

Similar Items

Similar Items