Resonant multilevel optical switching with phase change material GST
We demonstrate a multilevel optical memristive switch based on a silicon Fabry–Perot resonator. The resonator is constructed by a pair of waveguide Bragg gratings at the ends of a multimode interferometer (MMI) covered with sub-micrometer-size Ge2Sb2Te5 (GST) thin film on top. The interaction betwee...
| Príomhchruthaitheoirí: | , , , , , , |
|---|---|
| Formáid: | Alt |
| Teanga: | English |
| Foilsithe / Cruthaithe: |
De Gruyter
2022-06-01
|
| Sraith: | Nanophotonics |
| Ábhair: | |
| Rochtain ar líne: | https://doi.org/10.1515/nanoph-2022-0276 |
| _version_ | 1826963971254517760 |
|---|---|
| author | Wu Di Yang Xing Wang Ningning Lu Liangjun Chen Jianping Zhou Linjie Rahman B. M. Azizur |
| author_facet | Wu Di Yang Xing Wang Ningning Lu Liangjun Chen Jianping Zhou Linjie Rahman B. M. Azizur |
| author_sort | Wu Di |
| collection | DOAJ |
| description | We demonstrate a multilevel optical memristive switch based on a silicon Fabry–Perot resonator. The resonator is constructed by a pair of waveguide Bragg gratings at the ends of a multimode interferometer (MMI) covered with sub-micrometer-size Ge2Sb2Te5 (GST) thin film on top. The interaction between the optical field and GST is greatly enhanced due to the resonant effect. The GST phase transition is triggered by applying electrical pulses to the doped-silicon microheater. Light is transmitted when GST is amorphous while it is highly absorbed by the crystalline GST at the resonance wavelength, leading to a higher on-off extinction ratio (ER) compared to the non-resonant device. The resonant device achieves a maximum transmission contrast of 10.29 dB and a total of 38 distinct nonvolatile switching levels. Our work provides an effective solution to improving the multilevel switching performance of phase-change devices and paves the way for future nonvolatile silicon photonics devices. |
| first_indexed | 2024-04-10T21:33:46Z |
| format | Article |
| id | doaj.art-7c10a3f1bdde4ac29ce5ae1552af241e |
| institution | Directory Open Access Journal |
| issn | 2192-8614 |
| language | English |
| last_indexed | 2025-02-18T02:48:36Z |
| publishDate | 2022-06-01 |
| publisher | De Gruyter |
| record_format | Article |
| series | Nanophotonics |
| spelling | doaj.art-7c10a3f1bdde4ac29ce5ae1552af241e2024-11-25T11:19:07ZengDe GruyterNanophotonics2192-86142022-06-0111153437344610.1515/nanoph-2022-0276Resonant multilevel optical switching with phase change material GSTWu Di0Yang Xing1Wang Ningning2Lu Liangjun3Chen Jianping4Zhou Linjie5Rahman B. M. Azizur6Key Laboratory of Advanced Optical Communication Systems and Networks, Shanghai Key Lab of Navigation and Location Services, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, ChinaKey Laboratory of Advanced Optical Communication Systems and Networks, Shanghai Key Lab of Navigation and Location Services, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, ChinaKey Laboratory of Advanced Optical Communication Systems and Networks, Shanghai Key Lab of Navigation and Location Services, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, ChinaKey Laboratory of Advanced Optical Communication Systems and Networks, Shanghai Key Lab of Navigation and Location Services, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, ChinaKey Laboratory of Advanced Optical Communication Systems and Networks, Shanghai Key Lab of Navigation and Location Services, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, ChinaKey Laboratory of Advanced Optical Communication Systems and Networks, Shanghai Key Lab of Navigation and Location Services, Department of Electronic Engineering, Shanghai Jiao Tong University, Shanghai 200240, ChinaSchool of Engineering & Mathematical Sciences, City University of London, London EC1V 0HB, UKWe demonstrate a multilevel optical memristive switch based on a silicon Fabry–Perot resonator. The resonator is constructed by a pair of waveguide Bragg gratings at the ends of a multimode interferometer (MMI) covered with sub-micrometer-size Ge2Sb2Te5 (GST) thin film on top. The interaction between the optical field and GST is greatly enhanced due to the resonant effect. The GST phase transition is triggered by applying electrical pulses to the doped-silicon microheater. Light is transmitted when GST is amorphous while it is highly absorbed by the crystalline GST at the resonance wavelength, leading to a higher on-off extinction ratio (ER) compared to the non-resonant device. The resonant device achieves a maximum transmission contrast of 10.29 dB and a total of 38 distinct nonvolatile switching levels. Our work provides an effective solution to improving the multilevel switching performance of phase-change devices and paves the way for future nonvolatile silicon photonics devices.https://doi.org/10.1515/nanoph-2022-0276integrated opticsoptical memristive switchphase change materialsilicon photonics |
| spellingShingle | Wu Di Yang Xing Wang Ningning Lu Liangjun Chen Jianping Zhou Linjie Rahman B. M. Azizur Resonant multilevel optical switching with phase change material GST Nanophotonics integrated optics optical memristive switch phase change material silicon photonics |
| title | Resonant multilevel optical switching with phase change material GST |
| title_full | Resonant multilevel optical switching with phase change material GST |
| title_fullStr | Resonant multilevel optical switching with phase change material GST |
| title_full_unstemmed | Resonant multilevel optical switching with phase change material GST |
| title_short | Resonant multilevel optical switching with phase change material GST |
| title_sort | resonant multilevel optical switching with phase change material gst |
| topic | integrated optics optical memristive switch phase change material silicon photonics |
| url | https://doi.org/10.1515/nanoph-2022-0276 |
| work_keys_str_mv | AT wudi resonantmultilevelopticalswitchingwithphasechangematerialgst AT yangxing resonantmultilevelopticalswitchingwithphasechangematerialgst AT wangningning resonantmultilevelopticalswitchingwithphasechangematerialgst AT luliangjun resonantmultilevelopticalswitchingwithphasechangematerialgst AT chenjianping resonantmultilevelopticalswitchingwithphasechangematerialgst AT zhoulinjie resonantmultilevelopticalswitchingwithphasechangematerialgst AT rahmanbmazizur resonantmultilevelopticalswitchingwithphasechangematerialgst |