Silicon Nanowire Field-Effect Transistor as Label-Free Detection of Hepatitis B Virus Proteins with Opposite Net Charges

The prevalence of hepatitis B virus (HBV) is a global healthcare threat, particularly chronic hepatitis B (CHB) that might lead to hepatocellular carcinoma (HCC) should not be neglected. Although many types of HBV diagnosis detection methods are available, some technical challenges, such as the high...

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Main Authors: Suh Kuan Yong, Shang-Kai Shen, Chia-Wei Chiang, Ying-Ya Weng, Ming-Pei Lu, Yuh-Shyong Yang
Format: Article
Language:English
Published: MDPI AG 2021-11-01
Series:Biosensors
Subjects:
Online Access:https://www.mdpi.com/2079-6374/11/11/442
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author Suh Kuan Yong
Shang-Kai Shen
Chia-Wei Chiang
Ying-Ya Weng
Ming-Pei Lu
Yuh-Shyong Yang
author_facet Suh Kuan Yong
Shang-Kai Shen
Chia-Wei Chiang
Ying-Ya Weng
Ming-Pei Lu
Yuh-Shyong Yang
author_sort Suh Kuan Yong
collection DOAJ
description The prevalence of hepatitis B virus (HBV) is a global healthcare threat, particularly chronic hepatitis B (CHB) that might lead to hepatocellular carcinoma (HCC) should not be neglected. Although many types of HBV diagnosis detection methods are available, some technical challenges, such as the high cost or lack of practical feasibility, need to be overcome. In this study, the polycrystalline silicon nanowire field-effect transistors (pSiNWFETs) were fabricated through commercial process technology and then chemically functionalized for sensing hepatitis B virus surface antigen (HBsAg) and hepatitis B virus X protein (HBx) at the femto-molar level. These two proteins have been suggested to be related to the HCC development, while the former is also the hallmark for HBV diagnosis, and the latter is an RNA-binding protein. Interestingly, these two proteins carried opposite net charges, which could serve as complementary candidates for evaluating the charge-based sensing mechanism in the pSiNWFET. The measurements on the threshold voltage shifts of pSiNWFETs showed a consistent correspondence to the polarity of the charges on the proteins studied. We believe that this report can pave the way towards developing an approachable tool for biomedical applications.
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spelling doaj.art-7c1f0187e6204a90b9fda2ae69706a9c2023-11-22T22:36:13ZengMDPI AGBiosensors2079-63742021-11-01111144210.3390/bios11110442Silicon Nanowire Field-Effect Transistor as Label-Free Detection of Hepatitis B Virus Proteins with Opposite Net ChargesSuh Kuan Yong0Shang-Kai Shen1Chia-Wei Chiang2Ying-Ya Weng3Ming-Pei Lu4Yuh-Shyong Yang5Department of Biological Science and Technology, National Yang Ming Chiao Tung University, Hsinchu 300, TaiwanInstitute of Biomedical Engineering, National Yang Ming Chiao Tung University, Hsinchu 300, TaiwanInstitute of Biomedical Engineering, National Yang Ming Chiao Tung University, Hsinchu 300, TaiwanInstitute of Biomedical Engineering, National Yang Ming Chiao Tung University, Hsinchu 300, TaiwanTaiwan Semiconductor Research Institute, National Applied Research Laboratories, Hsinchu 300, TaiwanDepartment of Biological Science and Technology, National Yang Ming Chiao Tung University, Hsinchu 300, TaiwanThe prevalence of hepatitis B virus (HBV) is a global healthcare threat, particularly chronic hepatitis B (CHB) that might lead to hepatocellular carcinoma (HCC) should not be neglected. Although many types of HBV diagnosis detection methods are available, some technical challenges, such as the high cost or lack of practical feasibility, need to be overcome. In this study, the polycrystalline silicon nanowire field-effect transistors (pSiNWFETs) were fabricated through commercial process technology and then chemically functionalized for sensing hepatitis B virus surface antigen (HBsAg) and hepatitis B virus X protein (HBx) at the femto-molar level. These two proteins have been suggested to be related to the HCC development, while the former is also the hallmark for HBV diagnosis, and the latter is an RNA-binding protein. Interestingly, these two proteins carried opposite net charges, which could serve as complementary candidates for evaluating the charge-based sensing mechanism in the pSiNWFET. The measurements on the threshold voltage shifts of pSiNWFETs showed a consistent correspondence to the polarity of the charges on the proteins studied. We believe that this report can pave the way towards developing an approachable tool for biomedical applications.https://www.mdpi.com/2079-6374/11/11/442hepatitis B virushepatitis B virus surface antigen (HBsAg)hepatitis B virus X protein (HBx)chronic hepatitis B (CHB)hepatocellular carcinoma (HCC)biomarker
spellingShingle Suh Kuan Yong
Shang-Kai Shen
Chia-Wei Chiang
Ying-Ya Weng
Ming-Pei Lu
Yuh-Shyong Yang
Silicon Nanowire Field-Effect Transistor as Label-Free Detection of Hepatitis B Virus Proteins with Opposite Net Charges
Biosensors
hepatitis B virus
hepatitis B virus surface antigen (HBsAg)
hepatitis B virus X protein (HBx)
chronic hepatitis B (CHB)
hepatocellular carcinoma (HCC)
biomarker
title Silicon Nanowire Field-Effect Transistor as Label-Free Detection of Hepatitis B Virus Proteins with Opposite Net Charges
title_full Silicon Nanowire Field-Effect Transistor as Label-Free Detection of Hepatitis B Virus Proteins with Opposite Net Charges
title_fullStr Silicon Nanowire Field-Effect Transistor as Label-Free Detection of Hepatitis B Virus Proteins with Opposite Net Charges
title_full_unstemmed Silicon Nanowire Field-Effect Transistor as Label-Free Detection of Hepatitis B Virus Proteins with Opposite Net Charges
title_short Silicon Nanowire Field-Effect Transistor as Label-Free Detection of Hepatitis B Virus Proteins with Opposite Net Charges
title_sort silicon nanowire field effect transistor as label free detection of hepatitis b virus proteins with opposite net charges
topic hepatitis B virus
hepatitis B virus surface antigen (HBsAg)
hepatitis B virus X protein (HBx)
chronic hepatitis B (CHB)
hepatocellular carcinoma (HCC)
biomarker
url https://www.mdpi.com/2079-6374/11/11/442
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