High-resistivity unintentionally carbon-doped GaN layers with nitrogen as nucleation layer carrier gas grown by metal-organic chemical vapor deposition
In this letter, high-resistivity unintentionally carbon-doped GaN layers with sheet resistivity greater than 106 Ω/□ have been grown on c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). We have observed that the growth of GaN nucleation layers (NLs) under N2 ambient lea...
| Main Authors: | , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2017-12-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4990099 |
| _version_ | 1811302992970776576 |
|---|---|
| author | Fu Chen Shichuang Sun Xuguang Deng Kai Fu Guohao Yu Liang Song Ronghui Hao Yaming Fan Yong Cai Baoshun Zhang |
| author_facet | Fu Chen Shichuang Sun Xuguang Deng Kai Fu Guohao Yu Liang Song Ronghui Hao Yaming Fan Yong Cai Baoshun Zhang |
| author_sort | Fu Chen |
| collection | DOAJ |
| description | In this letter, high-resistivity unintentionally carbon-doped GaN layers with sheet resistivity greater than 106 Ω/□ have been grown on c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). We have observed that the growth of GaN nucleation layers (NLs) under N2 ambient leads to a large full width at half maximum (FWHM) of (102) X-ray diffraction (XRD) line in the rocking curve about 1576 arc sec. Unintentional carbon incorporation can be observed in the secondary ion mass spectroscopy (SIMS) measurements. The results demonstrate the self-compensation mechanism is attributed to the increased density of edge-type threading dislocations and carbon impurities. The AlGaN/GaN HEMT grown on the high-resistivity GaN template has also been fabricated, exhibiting a maximum drain current of 478 mA/mm, a peak transconductance of 60.0 mS/mm, an ON/OFF ratio of 0.96×108 and a breakdown voltage of 621 V. |
| first_indexed | 2024-04-13T07:39:16Z |
| format | Article |
| id | doaj.art-7c2cc3d485994287b98d9b39e02a20ab |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-04-13T07:39:16Z |
| publishDate | 2017-12-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-7c2cc3d485994287b98d9b39e02a20ab2022-12-22T02:55:58ZengAIP Publishing LLCAIP Advances2158-32262017-12-01712125018125018-710.1063/1.4990099070712ADVHigh-resistivity unintentionally carbon-doped GaN layers with nitrogen as nucleation layer carrier gas grown by metal-organic chemical vapor depositionFu Chen0Shichuang Sun1Xuguang Deng2Kai Fu3Guohao Yu4Liang Song5Ronghui Hao6Yaming Fan7Yong Cai8Baoshun Zhang9Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123, ChinaKey Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123, ChinaKey Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123, ChinaKey Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123, ChinaKey Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123, ChinaKey Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123, ChinaKey Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123, ChinaKey Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123, ChinaKey Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123, ChinaKey Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123, ChinaIn this letter, high-resistivity unintentionally carbon-doped GaN layers with sheet resistivity greater than 106 Ω/□ have been grown on c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). We have observed that the growth of GaN nucleation layers (NLs) under N2 ambient leads to a large full width at half maximum (FWHM) of (102) X-ray diffraction (XRD) line in the rocking curve about 1576 arc sec. Unintentional carbon incorporation can be observed in the secondary ion mass spectroscopy (SIMS) measurements. The results demonstrate the self-compensation mechanism is attributed to the increased density of edge-type threading dislocations and carbon impurities. The AlGaN/GaN HEMT grown on the high-resistivity GaN template has also been fabricated, exhibiting a maximum drain current of 478 mA/mm, a peak transconductance of 60.0 mS/mm, an ON/OFF ratio of 0.96×108 and a breakdown voltage of 621 V.http://dx.doi.org/10.1063/1.4990099 |
| spellingShingle | Fu Chen Shichuang Sun Xuguang Deng Kai Fu Guohao Yu Liang Song Ronghui Hao Yaming Fan Yong Cai Baoshun Zhang High-resistivity unintentionally carbon-doped GaN layers with nitrogen as nucleation layer carrier gas grown by metal-organic chemical vapor deposition AIP Advances |
| title | High-resistivity unintentionally carbon-doped GaN layers with nitrogen as nucleation layer carrier gas grown by metal-organic chemical vapor deposition |
| title_full | High-resistivity unintentionally carbon-doped GaN layers with nitrogen as nucleation layer carrier gas grown by metal-organic chemical vapor deposition |
| title_fullStr | High-resistivity unintentionally carbon-doped GaN layers with nitrogen as nucleation layer carrier gas grown by metal-organic chemical vapor deposition |
| title_full_unstemmed | High-resistivity unintentionally carbon-doped GaN layers with nitrogen as nucleation layer carrier gas grown by metal-organic chemical vapor deposition |
| title_short | High-resistivity unintentionally carbon-doped GaN layers with nitrogen as nucleation layer carrier gas grown by metal-organic chemical vapor deposition |
| title_sort | high resistivity unintentionally carbon doped gan layers with nitrogen as nucleation layer carrier gas grown by metal organic chemical vapor deposition |
| url | http://dx.doi.org/10.1063/1.4990099 |
| work_keys_str_mv | AT fuchen highresistivityunintentionallycarbondopedganlayerswithnitrogenasnucleationlayercarriergasgrownbymetalorganicchemicalvapordeposition AT shichuangsun highresistivityunintentionallycarbondopedganlayerswithnitrogenasnucleationlayercarriergasgrownbymetalorganicchemicalvapordeposition AT xuguangdeng highresistivityunintentionallycarbondopedganlayerswithnitrogenasnucleationlayercarriergasgrownbymetalorganicchemicalvapordeposition AT kaifu highresistivityunintentionallycarbondopedganlayerswithnitrogenasnucleationlayercarriergasgrownbymetalorganicchemicalvapordeposition AT guohaoyu highresistivityunintentionallycarbondopedganlayerswithnitrogenasnucleationlayercarriergasgrownbymetalorganicchemicalvapordeposition AT liangsong highresistivityunintentionallycarbondopedganlayerswithnitrogenasnucleationlayercarriergasgrownbymetalorganicchemicalvapordeposition AT ronghuihao highresistivityunintentionallycarbondopedganlayerswithnitrogenasnucleationlayercarriergasgrownbymetalorganicchemicalvapordeposition AT yamingfan highresistivityunintentionallycarbondopedganlayerswithnitrogenasnucleationlayercarriergasgrownbymetalorganicchemicalvapordeposition AT yongcai highresistivityunintentionallycarbondopedganlayerswithnitrogenasnucleationlayercarriergasgrownbymetalorganicchemicalvapordeposition AT baoshunzhang highresistivityunintentionallycarbondopedganlayerswithnitrogenasnucleationlayercarriergasgrownbymetalorganicchemicalvapordeposition |