Hydrogen-induced anomalous Hall effect in Co-doped ZnO
The electrical transport characteristics and anomalous Hall effect (AHE) were investigated for a hydrogen-injected Co-doped ZnO thin film. Based on the measurements of resistivity and the Hall effect between 5 K and 300 K, the existence of Co-H-Co complexes was observed to introduce the AHE and enab...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
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IOP Publishing
2014-01-01
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| Series: | New Journal of Physics |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/1367-2630/16/7/073030 |
| _version_ | 1827874187281170432 |
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| author | Yong Chan Cho Seunghun Lee Ji Hun Park Won Kyoung Kim Ho-Hyun Nahm Chul Hong Park Se-Young Jeong |
| author_facet | Yong Chan Cho Seunghun Lee Ji Hun Park Won Kyoung Kim Ho-Hyun Nahm Chul Hong Park Se-Young Jeong |
| author_sort | Yong Chan Cho |
| collection | DOAJ |
| description | The electrical transport characteristics and anomalous Hall effect (AHE) were investigated for a hydrogen-injected Co-doped ZnO thin film. Based on the measurements of resistivity and the Hall effect between 5 K and 300 K, the existence of Co-H-Co complexes was observed to introduce the AHE and enable the AHE to persist up to room temperature. The observed H-induced AHE originates from the asymmetric scattering of carrier hopping between the localized states driven by ferromagnetic Co-H-Co complexes, and a theoretical study using first-principle calculations supports the experimental results well. This large ferromagnetic response of charge carriers by the hydrogen-induced AHE on semiconducting oxides will stimulate the further investigation of room-temperature spintronic applications. |
| first_indexed | 2024-03-12T16:48:40Z |
| format | Article |
| id | doaj.art-7c390275b262485b9307563a3aaafd31 |
| institution | Directory Open Access Journal |
| issn | 1367-2630 |
| language | English |
| last_indexed | 2024-03-12T16:48:40Z |
| publishDate | 2014-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | New Journal of Physics |
| spelling | doaj.art-7c390275b262485b9307563a3aaafd312023-08-08T11:27:42ZengIOP PublishingNew Journal of Physics1367-26302014-01-0116707303010.1088/1367-2630/16/7/073030Hydrogen-induced anomalous Hall effect in Co-doped ZnOYong Chan Cho0Seunghun Lee1Ji Hun Park2Won Kyoung Kim3Ho-Hyun Nahm4Chul Hong Park5Se-Young Jeong6Crystal Bank Institute, Pusan National University , Miryang 627–706, KoreaThe Institute of Basic Science, Korea University , Seoul 136–701, KoreaDepartment of Cogno-Mechatronics Engineering, Pusan National University , Miryang 627–706, KoreaDepartment of Cogno-Mechatronics Engineering, Pusan National University , Miryang 627–706, KoreaCenter for Correlated Electron Systems, Institute for Basic Science (IBS) & Department of Physics and Astronomy, Seoul National University , Seoul 151–747, KoreaDepartment of Physics Education, Pusan National University , Busan 609–735, KoreaCrystal Bank Institute, Pusan National University , Miryang 627–706, Korea; Department of Cogno-Mechatronics Engineering, Pusan National University , Miryang 627–706, KoreaThe electrical transport characteristics and anomalous Hall effect (AHE) were investigated for a hydrogen-injected Co-doped ZnO thin film. Based on the measurements of resistivity and the Hall effect between 5 K and 300 K, the existence of Co-H-Co complexes was observed to introduce the AHE and enable the AHE to persist up to room temperature. The observed H-induced AHE originates from the asymmetric scattering of carrier hopping between the localized states driven by ferromagnetic Co-H-Co complexes, and a theoretical study using first-principle calculations supports the experimental results well. This large ferromagnetic response of charge carriers by the hydrogen-induced AHE on semiconducting oxides will stimulate the further investigation of room-temperature spintronic applications.https://doi.org/10.1088/1367-2630/16/7/073030anomalous Hall effecthydrogen mediated ferromagnetismCo-doped ZnO |
| spellingShingle | Yong Chan Cho Seunghun Lee Ji Hun Park Won Kyoung Kim Ho-Hyun Nahm Chul Hong Park Se-Young Jeong Hydrogen-induced anomalous Hall effect in Co-doped ZnO New Journal of Physics anomalous Hall effect hydrogen mediated ferromagnetism Co-doped ZnO |
| title | Hydrogen-induced anomalous Hall effect in Co-doped ZnO |
| title_full | Hydrogen-induced anomalous Hall effect in Co-doped ZnO |
| title_fullStr | Hydrogen-induced anomalous Hall effect in Co-doped ZnO |
| title_full_unstemmed | Hydrogen-induced anomalous Hall effect in Co-doped ZnO |
| title_short | Hydrogen-induced anomalous Hall effect in Co-doped ZnO |
| title_sort | hydrogen induced anomalous hall effect in co doped zno |
| topic | anomalous Hall effect hydrogen mediated ferromagnetism Co-doped ZnO |
| url | https://doi.org/10.1088/1367-2630/16/7/073030 |
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