Light Guide Layer Thickness Optimization for Enhancement of the Light Extraction Efficiency of Ultraviolet Light–Emitting Diodes

Abstract Consider material machinability and lattice mismatch sapphire as substrates for the ultraviolet-C light-emitting diodes (UV-C LEDs) are commonly used, but their high refractive index can result in the total internal reflection (TIR) of light whereby some light is absorbed, therefore caused...

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Main Authors: Zhi Ting Ye, Yuan-Heng Cheng, Li-Wei Hung, Kung-Hsieh Hsu, Yu Chang Hu
Format: Article
Language:English
Published: SpringerOpen 2021-06-01
Series:Nanoscale Research Letters
Subjects:
Online Access:https://doi.org/10.1186/s11671-021-03563-6
_version_ 1797706929006444544
author Zhi Ting Ye
Yuan-Heng Cheng
Li-Wei Hung
Kung-Hsieh Hsu
Yu Chang Hu
author_facet Zhi Ting Ye
Yuan-Heng Cheng
Li-Wei Hung
Kung-Hsieh Hsu
Yu Chang Hu
author_sort Zhi Ting Ye
collection DOAJ
description Abstract Consider material machinability and lattice mismatch sapphire as substrates for the ultraviolet-C light-emitting diodes (UV-C LEDs) are commonly used, but their high refractive index can result in the total internal reflection (TIR) of light whereby some light is absorbed, therefore caused reducing light extraction efficiency (LEE). In this study, we propose a method to optimize the thickness of a sapphire substrate light guide layer through first-order optical design which used the optical simulation software Ansys SPEOS to simulate and evaluate the light extraction efficiency. AlGaN UV-C LEDs wafers with a light guide layer thickness of 150–700 μm were used. The simulation proceeded under a center wavelength of 275 nm to determine the optimal thickness design of the light guide layer. Finally, the experimental results demonstrated that the initial light guide layer thickness of 150 μm the reference output power of 13.53 mW, and an increased thickness of 600 um resulted in output power of 20.58 mW. The LEE can be increased by 1.52 times through light guide layer thickness optimization. We propose a method to optimize the thickness of a sapphire substrate light guide layer through first-order optical design. AlGaN UV-C LEDs wafers with a light guide layer thickness of 150–700 μm were used. Finally, the experimental results demonstrated that the LEE can be increased by 1.52 times through light guide layer thickness optimization.
first_indexed 2024-03-12T05:58:39Z
format Article
id doaj.art-7c3d9cd7bfcb448f990288f8985f7ceb
institution Directory Open Access Journal
issn 1556-276X
language English
last_indexed 2024-03-12T05:58:39Z
publishDate 2021-06-01
publisher SpringerOpen
record_format Article
series Nanoscale Research Letters
spelling doaj.art-7c3d9cd7bfcb448f990288f8985f7ceb2023-09-03T04:20:49ZengSpringerOpenNanoscale Research Letters1556-276X2021-06-011611810.1186/s11671-021-03563-6Light Guide Layer Thickness Optimization for Enhancement of the Light Extraction Efficiency of Ultraviolet Light–Emitting DiodesZhi Ting Ye0Yuan-Heng Cheng1Li-Wei Hung2Kung-Hsieh Hsu3Yu Chang Hu4Department of Mechanical Engineering, Advanced Institute of Manufacturing With High-Tech Innovations, National Chung Cheng UniversityDepartment of Mechanical Engineering, Advanced Institute of Manufacturing With High-Tech Innovations, National Chung Cheng UniversityDepartment of Process Development Division, EPILEDS TECHNOLOGIESDepartment of Process Development Division, EPILEDS TECHNOLOGIESDepartment of R&D Division, Harvatek CorporationAbstract Consider material machinability and lattice mismatch sapphire as substrates for the ultraviolet-C light-emitting diodes (UV-C LEDs) are commonly used, but their high refractive index can result in the total internal reflection (TIR) of light whereby some light is absorbed, therefore caused reducing light extraction efficiency (LEE). In this study, we propose a method to optimize the thickness of a sapphire substrate light guide layer through first-order optical design which used the optical simulation software Ansys SPEOS to simulate and evaluate the light extraction efficiency. AlGaN UV-C LEDs wafers with a light guide layer thickness of 150–700 μm were used. The simulation proceeded under a center wavelength of 275 nm to determine the optimal thickness design of the light guide layer. Finally, the experimental results demonstrated that the initial light guide layer thickness of 150 μm the reference output power of 13.53 mW, and an increased thickness of 600 um resulted in output power of 20.58 mW. The LEE can be increased by 1.52 times through light guide layer thickness optimization. We propose a method to optimize the thickness of a sapphire substrate light guide layer through first-order optical design. AlGaN UV-C LEDs wafers with a light guide layer thickness of 150–700 μm were used. Finally, the experimental results demonstrated that the LEE can be increased by 1.52 times through light guide layer thickness optimization.https://doi.org/10.1186/s11671-021-03563-6Deep-ultraviolet light-emitting diodesLight extraction efficiencyLight guide layerFirst-order optical design
spellingShingle Zhi Ting Ye
Yuan-Heng Cheng
Li-Wei Hung
Kung-Hsieh Hsu
Yu Chang Hu
Light Guide Layer Thickness Optimization for Enhancement of the Light Extraction Efficiency of Ultraviolet Light–Emitting Diodes
Nanoscale Research Letters
Deep-ultraviolet light-emitting diodes
Light extraction efficiency
Light guide layer
First-order optical design
title Light Guide Layer Thickness Optimization for Enhancement of the Light Extraction Efficiency of Ultraviolet Light–Emitting Diodes
title_full Light Guide Layer Thickness Optimization for Enhancement of the Light Extraction Efficiency of Ultraviolet Light–Emitting Diodes
title_fullStr Light Guide Layer Thickness Optimization for Enhancement of the Light Extraction Efficiency of Ultraviolet Light–Emitting Diodes
title_full_unstemmed Light Guide Layer Thickness Optimization for Enhancement of the Light Extraction Efficiency of Ultraviolet Light–Emitting Diodes
title_short Light Guide Layer Thickness Optimization for Enhancement of the Light Extraction Efficiency of Ultraviolet Light–Emitting Diodes
title_sort light guide layer thickness optimization for enhancement of the light extraction efficiency of ultraviolet light emitting diodes
topic Deep-ultraviolet light-emitting diodes
Light extraction efficiency
Light guide layer
First-order optical design
url https://doi.org/10.1186/s11671-021-03563-6
work_keys_str_mv AT zhitingye lightguidelayerthicknessoptimizationforenhancementofthelightextractionefficiencyofultravioletlightemittingdiodes
AT yuanhengcheng lightguidelayerthicknessoptimizationforenhancementofthelightextractionefficiencyofultravioletlightemittingdiodes
AT liweihung lightguidelayerthicknessoptimizationforenhancementofthelightextractionefficiencyofultravioletlightemittingdiodes
AT kunghsiehhsu lightguidelayerthicknessoptimizationforenhancementofthelightextractionefficiencyofultravioletlightemittingdiodes
AT yuchanghu lightguidelayerthicknessoptimizationforenhancementofthelightextractionefficiencyofultravioletlightemittingdiodes