Device Optimization of a Lead-Free Perovskite/Silicon Tandem Solar Cell with 24.4% Power Conversion Efficiency
In this work, simulations were performed to optimize the parameters of a lead-free perovskite/silicon tandem solar cell for the improved efficiency and stability of commercial devices. The top sub-cell is based on a lead-free perovskite with a large bandgap of 1.8 eV, an electron transport layer of...
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MDPI AG
2021-06-01
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| Series: | Energies |
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| Online Access: | https://www.mdpi.com/1996-1073/14/12/3383 |
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| author | Khaoula Amri Rabeb Belghouthi Michel Aillerie Rached Gharbi |
| author_facet | Khaoula Amri Rabeb Belghouthi Michel Aillerie Rached Gharbi |
| author_sort | Khaoula Amri |
| collection | DOAJ |
| description | In this work, simulations were performed to optimize the parameters of a lead-free perovskite/silicon tandem solar cell for the improved efficiency and stability of commercial devices. The top sub-cell is based on a lead-free perovskite with a large bandgap of 1.8 eV, an electron transport layer of SnO<sub>2</sub>/PCBM, which is known for its anti-hysteresis effect, and a hole transport layer of NiO to improve stability, whereas the bottom sub-cell is based on n-type silicon to increase the efficiency of the whole cell. First, the two sub-cells were simulated under standalone conditions for calibration purposes. Then, the current matching condition was obtained by optimizing the thicknesses of the absorber layers of both sub-cells and the doping concentration of the back surface field (BSF) layer of the silicon sub-cell. As a result of this optimization phase, thicknesses of 380 nm and 20 µm for the top and bottom sub-cells, respectively, and a doping concentration of 10<sup>22</sup> cm<sup>–3</sup> were used in the configuration of the tandem cell, yielding a large open-circuit voltage of 1.76 V and a power conversion efficiency of 24.4% for the whole cell. Finally, the effect of the working temperature was evaluated, and the results reveal that the high performance of lead-free perovskite sub-cells is less affected by an increase in temperature compared to lead-based solar cells, such as those based on CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> perovskite. |
| first_indexed | 2024-03-10T10:36:11Z |
| format | Article |
| id | doaj.art-7c64213b453349a69009738ab1ac861a |
| institution | Directory Open Access Journal |
| issn | 1996-1073 |
| language | English |
| last_indexed | 2024-03-10T10:36:11Z |
| publishDate | 2021-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Energies |
| spelling | doaj.art-7c64213b453349a69009738ab1ac861a2023-11-21T23:17:02ZengMDPI AGEnergies1996-10732021-06-011412338310.3390/en14123383Device Optimization of a Lead-Free Perovskite/Silicon Tandem Solar Cell with 24.4% Power Conversion EfficiencyKhaoula Amri0Rabeb Belghouthi1Michel Aillerie2Rached Gharbi3LMOPS, Université de Lorraine, CentraleSupélec, F-57000 Metz, FranceLMOPS, Université de Lorraine, CentraleSupélec, F-57000 Metz, FranceLMOPS, Université de Lorraine, CentraleSupélec, F-57000 Metz, FranceLISIER, Université de Tunis, Tunis 1008, TunisiaIn this work, simulations were performed to optimize the parameters of a lead-free perovskite/silicon tandem solar cell for the improved efficiency and stability of commercial devices. The top sub-cell is based on a lead-free perovskite with a large bandgap of 1.8 eV, an electron transport layer of SnO<sub>2</sub>/PCBM, which is known for its anti-hysteresis effect, and a hole transport layer of NiO to improve stability, whereas the bottom sub-cell is based on n-type silicon to increase the efficiency of the whole cell. First, the two sub-cells were simulated under standalone conditions for calibration purposes. Then, the current matching condition was obtained by optimizing the thicknesses of the absorber layers of both sub-cells and the doping concentration of the back surface field (BSF) layer of the silicon sub-cell. As a result of this optimization phase, thicknesses of 380 nm and 20 µm for the top and bottom sub-cells, respectively, and a doping concentration of 10<sup>22</sup> cm<sup>–3</sup> were used in the configuration of the tandem cell, yielding a large open-circuit voltage of 1.76 V and a power conversion efficiency of 24.4% for the whole cell. Finally, the effect of the working temperature was evaluated, and the results reveal that the high performance of lead-free perovskite sub-cells is less affected by an increase in temperature compared to lead-based solar cells, such as those based on CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> perovskite.https://www.mdpi.com/1996-1073/14/12/3383tandem solar celllead-free perovskiteSCAPS simulationhigh efficiency |
| spellingShingle | Khaoula Amri Rabeb Belghouthi Michel Aillerie Rached Gharbi Device Optimization of a Lead-Free Perovskite/Silicon Tandem Solar Cell with 24.4% Power Conversion Efficiency Energies tandem solar cell lead-free perovskite SCAPS simulation high efficiency |
| title | Device Optimization of a Lead-Free Perovskite/Silicon Tandem Solar Cell with 24.4% Power Conversion Efficiency |
| title_full | Device Optimization of a Lead-Free Perovskite/Silicon Tandem Solar Cell with 24.4% Power Conversion Efficiency |
| title_fullStr | Device Optimization of a Lead-Free Perovskite/Silicon Tandem Solar Cell with 24.4% Power Conversion Efficiency |
| title_full_unstemmed | Device Optimization of a Lead-Free Perovskite/Silicon Tandem Solar Cell with 24.4% Power Conversion Efficiency |
| title_short | Device Optimization of a Lead-Free Perovskite/Silicon Tandem Solar Cell with 24.4% Power Conversion Efficiency |
| title_sort | device optimization of a lead free perovskite silicon tandem solar cell with 24 4 power conversion efficiency |
| topic | tandem solar cell lead-free perovskite SCAPS simulation high efficiency |
| url | https://www.mdpi.com/1996-1073/14/12/3383 |
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