Investigation of ON-State Breakdown Mechanism in AlGaN/GaN HEMTs with AlGaN Back Barrier
The temperature-dependent ON-state breakdown <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi>B</mi><msub><mi>V</mi><mrow><mi>O</mi><mi>N</mi>...
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MDPI AG
2022-04-01
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| Series: | Electronics |
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| Online Access: | https://www.mdpi.com/2079-9292/11/9/1331 |
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| author | Yuchen Li Sen Huang Xinhua Wang Qimeng Jiang Xinyu Liu |
| author_facet | Yuchen Li Sen Huang Xinhua Wang Qimeng Jiang Xinyu Liu |
| author_sort | Yuchen Li |
| collection | DOAJ |
| description | The temperature-dependent ON-state breakdown <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi>B</mi><msub><mi>V</mi><mrow><mi>O</mi><mi>N</mi></mrow></msub></mrow></semantics></math></inline-formula> loci of AlGaN/GaN high-electron-mobility transistors (HEMTs) with an AlGaN back barrier were investigated using the gate current extraction technique. The impact ionization of acceptor-like traps was revealed to be responsible for the ON-state breakdown in HEMTs as a 2D electron gas (2DEG) channel is marginally turned on. The characteristic electric field <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>E</mi><mi>i</mi></msub></semantics></math></inline-formula> of impact ionization was extracted, exhibiting a U-shaped temperature dependence from 40 to −30 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mrow></mrow><mo>∘</mo></msup></semantics></math></inline-formula>C, with minimum <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>E</mi><mi>i</mi></msub></semantics></math></inline-formula> occurring at −10 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mrow></mrow><mo>∘</mo></msup></semantics></math></inline-formula>C. The impurity scattering effect of acceptor-like traps in AlGaN/GaN heterostructures is suggested to be responsible for the negative temperature dependence of <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi>B</mi><msub><mi>V</mi><mrow><mi>O</mi><mi>N</mi></mrow></msub></mrow></semantics></math></inline-formula> and <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>E</mi><mi>i</mi></msub></semantics></math></inline-formula> below −10 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mrow></mrow><mo>∘</mo></msup></semantics></math></inline-formula>C. |
| first_indexed | 2024-03-10T04:15:05Z |
| format | Article |
| id | doaj.art-7c73b858a3804beb8448e953b44c36a6 |
| institution | Directory Open Access Journal |
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| language | English |
| last_indexed | 2024-03-10T04:15:05Z |
| publishDate | 2022-04-01 |
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| series | Electronics |
| spelling | doaj.art-7c73b858a3804beb8448e953b44c36a62023-11-23T08:02:02ZengMDPI AGElectronics2079-92922022-04-01119133110.3390/electronics11091331Investigation of ON-State Breakdown Mechanism in AlGaN/GaN HEMTs with AlGaN Back BarrierYuchen Li0Sen Huang1Xinhua Wang2Qimeng Jiang3Xinyu Liu4R&D Center of High-Frequency & High-Voltage Device and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, ChinaR&D Center of High-Frequency & High-Voltage Device and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, ChinaR&D Center of High-Frequency & High-Voltage Device and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, ChinaR&D Center of High-Frequency & High-Voltage Device and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, ChinaR&D Center of High-Frequency & High-Voltage Device and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, ChinaThe temperature-dependent ON-state breakdown <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi>B</mi><msub><mi>V</mi><mrow><mi>O</mi><mi>N</mi></mrow></msub></mrow></semantics></math></inline-formula> loci of AlGaN/GaN high-electron-mobility transistors (HEMTs) with an AlGaN back barrier were investigated using the gate current extraction technique. The impact ionization of acceptor-like traps was revealed to be responsible for the ON-state breakdown in HEMTs as a 2D electron gas (2DEG) channel is marginally turned on. The characteristic electric field <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>E</mi><mi>i</mi></msub></semantics></math></inline-formula> of impact ionization was extracted, exhibiting a U-shaped temperature dependence from 40 to −30 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mrow></mrow><mo>∘</mo></msup></semantics></math></inline-formula>C, with minimum <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>E</mi><mi>i</mi></msub></semantics></math></inline-formula> occurring at −10 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mrow></mrow><mo>∘</mo></msup></semantics></math></inline-formula>C. The impurity scattering effect of acceptor-like traps in AlGaN/GaN heterostructures is suggested to be responsible for the negative temperature dependence of <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi>B</mi><msub><mi>V</mi><mrow><mi>O</mi><mi>N</mi></mrow></msub></mrow></semantics></math></inline-formula> and <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>E</mi><mi>i</mi></msub></semantics></math></inline-formula> below −10 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mrow></mrow><mo>∘</mo></msup></semantics></math></inline-formula>C.https://www.mdpi.com/2079-9292/11/9/1331gallium nitrideHEMTelectric breakdownON-state breakdown |
| spellingShingle | Yuchen Li Sen Huang Xinhua Wang Qimeng Jiang Xinyu Liu Investigation of ON-State Breakdown Mechanism in AlGaN/GaN HEMTs with AlGaN Back Barrier Electronics gallium nitride HEMT electric breakdown ON-state breakdown |
| title | Investigation of ON-State Breakdown Mechanism in AlGaN/GaN HEMTs with AlGaN Back Barrier |
| title_full | Investigation of ON-State Breakdown Mechanism in AlGaN/GaN HEMTs with AlGaN Back Barrier |
| title_fullStr | Investigation of ON-State Breakdown Mechanism in AlGaN/GaN HEMTs with AlGaN Back Barrier |
| title_full_unstemmed | Investigation of ON-State Breakdown Mechanism in AlGaN/GaN HEMTs with AlGaN Back Barrier |
| title_short | Investigation of ON-State Breakdown Mechanism in AlGaN/GaN HEMTs with AlGaN Back Barrier |
| title_sort | investigation of on state breakdown mechanism in algan gan hemts with algan back barrier |
| topic | gallium nitride HEMT electric breakdown ON-state breakdown |
| url | https://www.mdpi.com/2079-9292/11/9/1331 |
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