Generation of Tunable and Ultra-Broadband Microwave Frequency Combs Based on a Semiconductor Laser Subject to Pulse Injection From a Current Modulated Laser
We have experimentally demonstrated and characterized the generation of tunable and ultra-broadband microwave frequency combs (MFCs) based on a slave laser (SL) subject to regular pulse injection from a current modulated master laser (ML). Under modulation frequency f<sub>m</sub> = 1.2 G...
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IEEE
2018-01-01
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Online Access: | https://ieeexplore.ieee.org/document/8543585/ |
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author | Li Fan Guang-Qiong Xia Tao Deng Xi Tang Xiao-Dong Lin Zi-Ye Gao Zheng-Mao Wu |
author_facet | Li Fan Guang-Qiong Xia Tao Deng Xi Tang Xiao-Dong Lin Zi-Ye Gao Zheng-Mao Wu |
author_sort | Li Fan |
collection | DOAJ |
description | We have experimentally demonstrated and characterized the generation of tunable and ultra-broadband microwave frequency combs (MFCs) based on a slave laser (SL) subject to regular pulse injection from a current modulated master laser (ML). Under modulation frequency f<sub>m</sub> = 1.2 GHz and modulation power P<sub>m</sub> = 22 dBm, the current modulated ML is driven into a regular pulse state, and a seed MFC with 14.4 GHz bandwidth within a ±5 dB amplitude variation can be obtained. Such a seed MFC is then injected into the SL for producing final MFC with higher performances. For a fixed detuning frequency f<sub>i</sub> = 0 GHz and optimized injection power P<sub>i</sub> = 2060 μW, the bandwidth of the final MFC is increased to 33.6 GHz, and the single-sideband phase noises of all comb lines of the MFC within the bandwidth can be decreased to below -90.9 dBc/Hz@10 kHz. Additionally, the influences of P<sub>i</sub> and f<sub>m</sub> on the MFC bandwidth are also analyzed. The experimental results are in agreement with numerical simulations to a certain extent. |
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spelling | doaj.art-7cb42e19c19a4bb299bc600101f5d3fe2022-12-21T22:38:36ZengIEEEIEEE Photonics Journal1943-06552018-01-0110611010.1109/JPHOT.2018.28831118543585Generation of Tunable and Ultra-Broadband Microwave Frequency Combs Based on a Semiconductor Laser Subject to Pulse Injection From a Current Modulated LaserLi Fan0Guang-Qiong Xia1https://orcid.org/0000-0002-3920-6749Tao Deng2https://orcid.org/0000-0001-5824-273XXi Tang3Xiao-Dong Lin4https://orcid.org/0000-0002-4665-7126Zi-Ye Gao5https://orcid.org/0000-0001-5086-8287Zheng-Mao Wu6https://orcid.org/0000-0002-4331-8743School of Physical Science and Technology, Southwest University, Chongqing, ChinaSchool of Physical Science and Technology, Southwest University, Chongqing, ChinaSchool of Physical Science and Technology, Southwest University, Chongqing, ChinaSchool of Physical Science and Technology, Southwest University, Chongqing, ChinaSchool of Physical Science and Technology, Southwest University, Chongqing, ChinaSchool of Physical Science and Technology, Southwest University, Chongqing, ChinaSchool of Physical Science and Technology, Southwest University, Chongqing, ChinaWe have experimentally demonstrated and characterized the generation of tunable and ultra-broadband microwave frequency combs (MFCs) based on a slave laser (SL) subject to regular pulse injection from a current modulated master laser (ML). Under modulation frequency f<sub>m</sub> = 1.2 GHz and modulation power P<sub>m</sub> = 22 dBm, the current modulated ML is driven into a regular pulse state, and a seed MFC with 14.4 GHz bandwidth within a ±5 dB amplitude variation can be obtained. Such a seed MFC is then injected into the SL for producing final MFC with higher performances. For a fixed detuning frequency f<sub>i</sub> = 0 GHz and optimized injection power P<sub>i</sub> = 2060 μW, the bandwidth of the final MFC is increased to 33.6 GHz, and the single-sideband phase noises of all comb lines of the MFC within the bandwidth can be decreased to below -90.9 dBc/Hz@10 kHz. Additionally, the influences of P<sub>i</sub> and f<sub>m</sub> on the MFC bandwidth are also analyzed. The experimental results are in agreement with numerical simulations to a certain extent.https://ieeexplore.ieee.org/document/8543585/Semiconductor lasermicrowave frequency combscurrent modulationpulse injectiontunable and broadband |
spellingShingle | Li Fan Guang-Qiong Xia Tao Deng Xi Tang Xiao-Dong Lin Zi-Ye Gao Zheng-Mao Wu Generation of Tunable and Ultra-Broadband Microwave Frequency Combs Based on a Semiconductor Laser Subject to Pulse Injection From a Current Modulated Laser IEEE Photonics Journal Semiconductor laser microwave frequency combs current modulation pulse injection tunable and broadband |
title | Generation of Tunable and Ultra-Broadband Microwave Frequency Combs Based on a Semiconductor Laser Subject to Pulse Injection From a Current Modulated Laser |
title_full | Generation of Tunable and Ultra-Broadband Microwave Frequency Combs Based on a Semiconductor Laser Subject to Pulse Injection From a Current Modulated Laser |
title_fullStr | Generation of Tunable and Ultra-Broadband Microwave Frequency Combs Based on a Semiconductor Laser Subject to Pulse Injection From a Current Modulated Laser |
title_full_unstemmed | Generation of Tunable and Ultra-Broadband Microwave Frequency Combs Based on a Semiconductor Laser Subject to Pulse Injection From a Current Modulated Laser |
title_short | Generation of Tunable and Ultra-Broadband Microwave Frequency Combs Based on a Semiconductor Laser Subject to Pulse Injection From a Current Modulated Laser |
title_sort | generation of tunable and ultra broadband microwave frequency combs based on a semiconductor laser subject to pulse injection from a current modulated laser |
topic | Semiconductor laser microwave frequency combs current modulation pulse injection tunable and broadband |
url | https://ieeexplore.ieee.org/document/8543585/ |
work_keys_str_mv | AT lifan generationoftunableandultrabroadbandmicrowavefrequencycombsbasedonasemiconductorlasersubjecttopulseinjectionfromacurrentmodulatedlaser AT guangqiongxia generationoftunableandultrabroadbandmicrowavefrequencycombsbasedonasemiconductorlasersubjecttopulseinjectionfromacurrentmodulatedlaser AT taodeng generationoftunableandultrabroadbandmicrowavefrequencycombsbasedonasemiconductorlasersubjecttopulseinjectionfromacurrentmodulatedlaser AT xitang generationoftunableandultrabroadbandmicrowavefrequencycombsbasedonasemiconductorlasersubjecttopulseinjectionfromacurrentmodulatedlaser AT xiaodonglin generationoftunableandultrabroadbandmicrowavefrequencycombsbasedonasemiconductorlasersubjecttopulseinjectionfromacurrentmodulatedlaser AT ziyegao generationoftunableandultrabroadbandmicrowavefrequencycombsbasedonasemiconductorlasersubjecttopulseinjectionfromacurrentmodulatedlaser AT zhengmaowu generationoftunableandultrabroadbandmicrowavefrequencycombsbasedonasemiconductorlasersubjecttopulseinjectionfromacurrentmodulatedlaser |