Sol-Gel Composites-Based Flexible and Transparent Amorphous Indium Gallium Zinc Oxide Thin-Film Synaptic Transistors for Wearable Intelligent Electronics
In this study, we propose the fabrication of sol-gel composite-based flexible and transparent synaptic transistors on polyimide (PI) substrates. Because a low thermal budget process is essential for the implementation of high-performance synaptic transistors on flexible PI substrates, microwave anne...
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| Format: | Article |
| Language: | English |
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MDPI AG
2021-11-01
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| Series: | Molecules |
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| Online Access: | https://www.mdpi.com/1420-3049/26/23/7233 |
| _version_ | 1797507363368861696 |
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| author | Jin-Gi Min Won-Ju Cho |
| author_facet | Jin-Gi Min Won-Ju Cho |
| author_sort | Jin-Gi Min |
| collection | DOAJ |
| description | In this study, we propose the fabrication of sol-gel composite-based flexible and transparent synaptic transistors on polyimide (PI) substrates. Because a low thermal budget process is essential for the implementation of high-performance synaptic transistors on flexible PI substrates, microwave annealing (MWA) as a heat treatment process suitable for thermally vulnerable substrates was employed and compared to conventional thermal annealing (CTA). In addition, a solution-processed wide-bandgap amorphous In-Ga-Zn (2:1:1) oxide (<i>a</i>-IGZO) channel, an organic polymer chitosan electrolyte-based electric double layer (EDL), and a high-<i>k</i> Ta<sub>2</sub>O<sub>5</sub> thin-film dielectric layer were applied to achieve high flexibility and transparency. The essential synaptic plasticity of the flexible and transparent synaptic transistors fabricated with the MWA process was demonstrated by single spike, paired-pulse facilitation, multi-spike facilitation excitatory post-synaptic current (EPSC), and three-cycle evaluation of potentiation and depression behaviors. Furthermore, we verified the mechanical robustness of the fabricated device through repeated bending tests and demonstrated that the electrical properties were stably maintained. As a result, the proposed sol-gel composite-based synaptic transistors are expected to serve as transparent and flexible intelligent electronic devices capable of stable neural operation. |
| first_indexed | 2024-03-10T04:47:27Z |
| format | Article |
| id | doaj.art-7cd536662aa442d6bb385ee3612df5f0 |
| institution | Directory Open Access Journal |
| issn | 1420-3049 |
| language | English |
| last_indexed | 2024-03-10T04:47:27Z |
| publishDate | 2021-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Molecules |
| spelling | doaj.art-7cd536662aa442d6bb385ee3612df5f02023-11-23T02:49:26ZengMDPI AGMolecules1420-30492021-11-012623723310.3390/molecules26237233Sol-Gel Composites-Based Flexible and Transparent Amorphous Indium Gallium Zinc Oxide Thin-Film Synaptic Transistors for Wearable Intelligent ElectronicsJin-Gi Min0Won-Ju Cho1Department of Electronic Materials Engineering, Kwangwoon University, Gwangun-ro 20, Nowon-gu, Seoul 01897, KoreaDepartment of Electronic Materials Engineering, Kwangwoon University, Gwangun-ro 20, Nowon-gu, Seoul 01897, KoreaIn this study, we propose the fabrication of sol-gel composite-based flexible and transparent synaptic transistors on polyimide (PI) substrates. Because a low thermal budget process is essential for the implementation of high-performance synaptic transistors on flexible PI substrates, microwave annealing (MWA) as a heat treatment process suitable for thermally vulnerable substrates was employed and compared to conventional thermal annealing (CTA). In addition, a solution-processed wide-bandgap amorphous In-Ga-Zn (2:1:1) oxide (<i>a</i>-IGZO) channel, an organic polymer chitosan electrolyte-based electric double layer (EDL), and a high-<i>k</i> Ta<sub>2</sub>O<sub>5</sub> thin-film dielectric layer were applied to achieve high flexibility and transparency. The essential synaptic plasticity of the flexible and transparent synaptic transistors fabricated with the MWA process was demonstrated by single spike, paired-pulse facilitation, multi-spike facilitation excitatory post-synaptic current (EPSC), and three-cycle evaluation of potentiation and depression behaviors. Furthermore, we verified the mechanical robustness of the fabricated device through repeated bending tests and demonstrated that the electrical properties were stably maintained. As a result, the proposed sol-gel composite-based synaptic transistors are expected to serve as transparent and flexible intelligent electronic devices capable of stable neural operation.https://www.mdpi.com/1420-3049/26/23/7233chitosanmicrowave annealingflexible substratesolution-processed <i>a</i>-IGZO channelsynaptic transistors |
| spellingShingle | Jin-Gi Min Won-Ju Cho Sol-Gel Composites-Based Flexible and Transparent Amorphous Indium Gallium Zinc Oxide Thin-Film Synaptic Transistors for Wearable Intelligent Electronics Molecules chitosan microwave annealing flexible substrate solution-processed <i>a</i>-IGZO channel synaptic transistors |
| title | Sol-Gel Composites-Based Flexible and Transparent Amorphous Indium Gallium Zinc Oxide Thin-Film Synaptic Transistors for Wearable Intelligent Electronics |
| title_full | Sol-Gel Composites-Based Flexible and Transparent Amorphous Indium Gallium Zinc Oxide Thin-Film Synaptic Transistors for Wearable Intelligent Electronics |
| title_fullStr | Sol-Gel Composites-Based Flexible and Transparent Amorphous Indium Gallium Zinc Oxide Thin-Film Synaptic Transistors for Wearable Intelligent Electronics |
| title_full_unstemmed | Sol-Gel Composites-Based Flexible and Transparent Amorphous Indium Gallium Zinc Oxide Thin-Film Synaptic Transistors for Wearable Intelligent Electronics |
| title_short | Sol-Gel Composites-Based Flexible and Transparent Amorphous Indium Gallium Zinc Oxide Thin-Film Synaptic Transistors for Wearable Intelligent Electronics |
| title_sort | sol gel composites based flexible and transparent amorphous indium gallium zinc oxide thin film synaptic transistors for wearable intelligent electronics |
| topic | chitosan microwave annealing flexible substrate solution-processed <i>a</i>-IGZO channel synaptic transistors |
| url | https://www.mdpi.com/1420-3049/26/23/7233 |
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