A Discrete Electrical Model for Photovoltaic Solar Cells—d1MxP
Solar cell equivalent circuit modelling is usually based on continuous I-V models, with a set of data obtained by analytical expressions. This work proposes an almost discrete novel mathematical method and correspondent electrical model, based on the I-V curve adjustment at every two adjacent points...
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MDPI AG
2023-02-01
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Series: | Energies |
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Online Access: | https://www.mdpi.com/1996-1073/16/4/2018 |
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author | João Paulo N. Torres Ricardo A. Marques Lameirinhas Catarina P. Correia V. Bernardo Helena Isabel Veiga Pedro Mendonça dos Santos |
author_facet | João Paulo N. Torres Ricardo A. Marques Lameirinhas Catarina P. Correia V. Bernardo Helena Isabel Veiga Pedro Mendonça dos Santos |
author_sort | João Paulo N. Torres |
collection | DOAJ |
description | Solar cell equivalent circuit modelling is usually based on continuous I-V models, with a set of data obtained by analytical expressions. This work proposes an almost discrete novel mathematical method and correspondent electrical model, based on the I-V curve adjustment at every two adjacent points. It is based on the discretisation of any diode model behaviour, such as the 1M5P (also known as 1D5P) or the 1M7P (also known as 2D7P). For this reason, the model is named d1MxP, meaning that it is a discrete (d) model (1M) with x parameters (xP). The modelling methodology validation process uses experimental data already published in the literature. According to the presented results, the proposed method shows increased accuracy when compared to the 1M5P or 1M7P equivalent models. The accuracy on the maximum power point and fill factor determination is relevant, resulting in an improvement of up to 3.34% in the maximum power, up to 5.70% in its voltage and up to 8.20% in its current, for the analysed data. Furthermore, Fill Factor values, have variation from up to 35.98%. The temperature influence on the silicon solar cell is also analysed, to validate the results. The proposed method allows highly accurate curve fitting to the (experimental) points and consequently, to obtain a more accurate model to analyse the performance of solar cells under different conditions. |
first_indexed | 2024-03-11T08:51:54Z |
format | Article |
id | doaj.art-7cf6dffe1ff746edba125d67b1b644fc |
institution | Directory Open Access Journal |
issn | 1996-1073 |
language | English |
last_indexed | 2024-03-11T08:51:54Z |
publishDate | 2023-02-01 |
publisher | MDPI AG |
record_format | Article |
series | Energies |
spelling | doaj.art-7cf6dffe1ff746edba125d67b1b644fc2023-11-16T20:21:01ZengMDPI AGEnergies1996-10732023-02-01164201810.3390/en16042018A Discrete Electrical Model for Photovoltaic Solar Cells—d1MxPJoão Paulo N. Torres0Ricardo A. Marques Lameirinhas1Catarina P. Correia V. Bernardo2Helena Isabel Veiga3Pedro Mendonça dos Santos4Academia Militar/CINAMIL, Av. Conde Castro Guimarães, 2720-113 Amadora, PortugalInstituto de Telecomunicações, 1049-001 Lisbon, PortugalDepartment of Electrical and Computer Engineering, Instituto Superior Técnico, 1049-001 Lisbon, PortugalAcademia Militar/CINAMIL, Av. Conde Castro Guimarães, 2720-113 Amadora, PortugalAcademia Militar/CINAMIL, Av. Conde Castro Guimarães, 2720-113 Amadora, PortugalSolar cell equivalent circuit modelling is usually based on continuous I-V models, with a set of data obtained by analytical expressions. This work proposes an almost discrete novel mathematical method and correspondent electrical model, based on the I-V curve adjustment at every two adjacent points. It is based on the discretisation of any diode model behaviour, such as the 1M5P (also known as 1D5P) or the 1M7P (also known as 2D7P). For this reason, the model is named d1MxP, meaning that it is a discrete (d) model (1M) with x parameters (xP). The modelling methodology validation process uses experimental data already published in the literature. According to the presented results, the proposed method shows increased accuracy when compared to the 1M5P or 1M7P equivalent models. The accuracy on the maximum power point and fill factor determination is relevant, resulting in an improvement of up to 3.34% in the maximum power, up to 5.70% in its voltage and up to 8.20% in its current, for the analysed data. Furthermore, Fill Factor values, have variation from up to 35.98%. The temperature influence on the silicon solar cell is also analysed, to validate the results. The proposed method allows highly accurate curve fitting to the (experimental) points and consequently, to obtain a more accurate model to analyse the performance of solar cells under different conditions.https://www.mdpi.com/1996-1073/16/4/20181M5Pd1MxPphotovoltaic technologysolar cellsolar cell equivalent modelsolar energy |
spellingShingle | João Paulo N. Torres Ricardo A. Marques Lameirinhas Catarina P. Correia V. Bernardo Helena Isabel Veiga Pedro Mendonça dos Santos A Discrete Electrical Model for Photovoltaic Solar Cells—d1MxP Energies 1M5P d1MxP photovoltaic technology solar cell solar cell equivalent model solar energy |
title | A Discrete Electrical Model for Photovoltaic Solar Cells—d1MxP |
title_full | A Discrete Electrical Model for Photovoltaic Solar Cells—d1MxP |
title_fullStr | A Discrete Electrical Model for Photovoltaic Solar Cells—d1MxP |
title_full_unstemmed | A Discrete Electrical Model for Photovoltaic Solar Cells—d1MxP |
title_short | A Discrete Electrical Model for Photovoltaic Solar Cells—d1MxP |
title_sort | discrete electrical model for photovoltaic solar cells d1mxp |
topic | 1M5P d1MxP photovoltaic technology solar cell solar cell equivalent model solar energy |
url | https://www.mdpi.com/1996-1073/16/4/2018 |
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