A Discrete Electrical Model for Photovoltaic Solar Cells—d1MxP

Solar cell equivalent circuit modelling is usually based on continuous I-V models, with a set of data obtained by analytical expressions. This work proposes an almost discrete novel mathematical method and correspondent electrical model, based on the I-V curve adjustment at every two adjacent points...

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Main Authors: João Paulo N. Torres, Ricardo A. Marques Lameirinhas, Catarina P. Correia V. Bernardo, Helena Isabel Veiga, Pedro Mendonça dos Santos
Format: Article
Language:English
Published: MDPI AG 2023-02-01
Series:Energies
Subjects:
Online Access:https://www.mdpi.com/1996-1073/16/4/2018
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author João Paulo N. Torres
Ricardo A. Marques Lameirinhas
Catarina P. Correia V. Bernardo
Helena Isabel Veiga
Pedro Mendonça dos Santos
author_facet João Paulo N. Torres
Ricardo A. Marques Lameirinhas
Catarina P. Correia V. Bernardo
Helena Isabel Veiga
Pedro Mendonça dos Santos
author_sort João Paulo N. Torres
collection DOAJ
description Solar cell equivalent circuit modelling is usually based on continuous I-V models, with a set of data obtained by analytical expressions. This work proposes an almost discrete novel mathematical method and correspondent electrical model, based on the I-V curve adjustment at every two adjacent points. It is based on the discretisation of any diode model behaviour, such as the 1M5P (also known as 1D5P) or the 1M7P (also known as 2D7P). For this reason, the model is named d1MxP, meaning that it is a discrete (d) model (1M) with x parameters (xP). The modelling methodology validation process uses experimental data already published in the literature. According to the presented results, the proposed method shows increased accuracy when compared to the 1M5P or 1M7P equivalent models. The accuracy on the maximum power point and fill factor determination is relevant, resulting in an improvement of up to 3.34% in the maximum power, up to 5.70% in its voltage and up to 8.20% in its current, for the analysed data. Furthermore, Fill Factor values, have variation from up to 35.98%. The temperature influence on the silicon solar cell is also analysed, to validate the results. The proposed method allows highly accurate curve fitting to the (experimental) points and consequently, to obtain a more accurate model to analyse the performance of solar cells under different conditions.
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spelling doaj.art-7cf6dffe1ff746edba125d67b1b644fc2023-11-16T20:21:01ZengMDPI AGEnergies1996-10732023-02-01164201810.3390/en16042018A Discrete Electrical Model for Photovoltaic Solar Cells—d1MxPJoão Paulo N. Torres0Ricardo A. Marques Lameirinhas1Catarina P. Correia V. Bernardo2Helena Isabel Veiga3Pedro Mendonça dos Santos4Academia Militar/CINAMIL, Av. Conde Castro Guimarães, 2720-113 Amadora, PortugalInstituto de Telecomunicações, 1049-001 Lisbon, PortugalDepartment of Electrical and Computer Engineering, Instituto Superior Técnico, 1049-001 Lisbon, PortugalAcademia Militar/CINAMIL, Av. Conde Castro Guimarães, 2720-113 Amadora, PortugalAcademia Militar/CINAMIL, Av. Conde Castro Guimarães, 2720-113 Amadora, PortugalSolar cell equivalent circuit modelling is usually based on continuous I-V models, with a set of data obtained by analytical expressions. This work proposes an almost discrete novel mathematical method and correspondent electrical model, based on the I-V curve adjustment at every two adjacent points. It is based on the discretisation of any diode model behaviour, such as the 1M5P (also known as 1D5P) or the 1M7P (also known as 2D7P). For this reason, the model is named d1MxP, meaning that it is a discrete (d) model (1M) with x parameters (xP). The modelling methodology validation process uses experimental data already published in the literature. According to the presented results, the proposed method shows increased accuracy when compared to the 1M5P or 1M7P equivalent models. The accuracy on the maximum power point and fill factor determination is relevant, resulting in an improvement of up to 3.34% in the maximum power, up to 5.70% in its voltage and up to 8.20% in its current, for the analysed data. Furthermore, Fill Factor values, have variation from up to 35.98%. The temperature influence on the silicon solar cell is also analysed, to validate the results. The proposed method allows highly accurate curve fitting to the (experimental) points and consequently, to obtain a more accurate model to analyse the performance of solar cells under different conditions.https://www.mdpi.com/1996-1073/16/4/20181M5Pd1MxPphotovoltaic technologysolar cellsolar cell equivalent modelsolar energy
spellingShingle João Paulo N. Torres
Ricardo A. Marques Lameirinhas
Catarina P. Correia V. Bernardo
Helena Isabel Veiga
Pedro Mendonça dos Santos
A Discrete Electrical Model for Photovoltaic Solar Cells—d1MxP
Energies
1M5P
d1MxP
photovoltaic technology
solar cell
solar cell equivalent model
solar energy
title A Discrete Electrical Model for Photovoltaic Solar Cells—d1MxP
title_full A Discrete Electrical Model for Photovoltaic Solar Cells—d1MxP
title_fullStr A Discrete Electrical Model for Photovoltaic Solar Cells—d1MxP
title_full_unstemmed A Discrete Electrical Model for Photovoltaic Solar Cells—d1MxP
title_short A Discrete Electrical Model for Photovoltaic Solar Cells—d1MxP
title_sort discrete electrical model for photovoltaic solar cells d1mxp
topic 1M5P
d1MxP
photovoltaic technology
solar cell
solar cell equivalent model
solar energy
url https://www.mdpi.com/1996-1073/16/4/2018
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