Negative-tone molecular glass photoresist for high-resolution electron beam lithography

A low molecular weight organic compound containing bis-phenol A backbone (BPA-6OH) is reported as a negative-tone photoresist. This material has a high glass transition temperature and excellent thermal stability. A good contrast, well-resolved line pattern around 73.4 nm and sensitivity of 52 µC cm...

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Main Authors: Yafei Wang, Long Chen, Jiating Yu, Xudong Guo, Shuangqing Wang, Guoqiang Yang
Format: Article
Language:English
Published: The Royal Society 2021-03-01
Series:Royal Society Open Science
Subjects:
Online Access:https://royalsocietypublishing.org/doi/pdf/10.1098/rsos.202132
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author Yafei Wang
Long Chen
Jiating Yu
Xudong Guo
Shuangqing Wang
Guoqiang Yang
author_facet Yafei Wang
Long Chen
Jiating Yu
Xudong Guo
Shuangqing Wang
Guoqiang Yang
author_sort Yafei Wang
collection DOAJ
description A low molecular weight organic compound containing bis-phenol A backbone (BPA-6OH) is reported as a negative-tone photoresist. This material has a high glass transition temperature and excellent thermal stability. A good contrast, well-resolved line pattern around 73.4 nm and sensitivity of 52 µC cm−2 can be received for negative-tone molecular glass photoresist upon exposure in electron beam lithography system. It indicates that the negative-tone molecular glass photoresist is one of the promising candidates for use in electron beam lithography.
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spelling doaj.art-7d1665b2456d435b83473c69a71a892b2022-12-21T23:30:12ZengThe Royal SocietyRoyal Society Open Science2054-57032021-03-018310.1098/rsos.202132202132Negative-tone molecular glass photoresist for high-resolution electron beam lithographyYafei WangLong ChenJiating YuXudong GuoShuangqing WangGuoqiang YangA low molecular weight organic compound containing bis-phenol A backbone (BPA-6OH) is reported as a negative-tone photoresist. This material has a high glass transition temperature and excellent thermal stability. A good contrast, well-resolved line pattern around 73.4 nm and sensitivity of 52 µC cm−2 can be received for negative-tone molecular glass photoresist upon exposure in electron beam lithography system. It indicates that the negative-tone molecular glass photoresist is one of the promising candidates for use in electron beam lithography.https://royalsocietypublishing.org/doi/pdf/10.1098/rsos.202132photoresistmolecular glass photoresistelectron beam lithographyphotolithographynegative-tone photoresist
spellingShingle Yafei Wang
Long Chen
Jiating Yu
Xudong Guo
Shuangqing Wang
Guoqiang Yang
Negative-tone molecular glass photoresist for high-resolution electron beam lithography
Royal Society Open Science
photoresist
molecular glass photoresist
electron beam lithography
photolithography
negative-tone photoresist
title Negative-tone molecular glass photoresist for high-resolution electron beam lithography
title_full Negative-tone molecular glass photoresist for high-resolution electron beam lithography
title_fullStr Negative-tone molecular glass photoresist for high-resolution electron beam lithography
title_full_unstemmed Negative-tone molecular glass photoresist for high-resolution electron beam lithography
title_short Negative-tone molecular glass photoresist for high-resolution electron beam lithography
title_sort negative tone molecular glass photoresist for high resolution electron beam lithography
topic photoresist
molecular glass photoresist
electron beam lithography
photolithography
negative-tone photoresist
url https://royalsocietypublishing.org/doi/pdf/10.1098/rsos.202132
work_keys_str_mv AT yafeiwang negativetonemolecularglassphotoresistforhighresolutionelectronbeamlithography
AT longchen negativetonemolecularglassphotoresistforhighresolutionelectronbeamlithography
AT jiatingyu negativetonemolecularglassphotoresistforhighresolutionelectronbeamlithography
AT xudongguo negativetonemolecularglassphotoresistforhighresolutionelectronbeamlithography
AT shuangqingwang negativetonemolecularglassphotoresistforhighresolutionelectronbeamlithography
AT guoqiangyang negativetonemolecularglassphotoresistforhighresolutionelectronbeamlithography