Controllable growth α-In2Se3 flakes by chemical vapor deposition
Boosting large-scale application of two-dimensional ferroelectric materials as memory transistors has stimulated intensive research interest. Layered α-In2Se3 features strikingly ferroelectric properties, which allows unique opportunities for the engineering of functional ferroelectric devices. Howe...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2023-08-01
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| Series: | Results in Physics |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379723004369 |
| _version_ | 1797755010859139072 |
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| author | Kemeng Yang Jiapeng Wang Lin Wu Yafei Yan Xi Tang Wei Gan Liang Li Yang Li Hui Han Hui Li |
| author_facet | Kemeng Yang Jiapeng Wang Lin Wu Yafei Yan Xi Tang Wei Gan Liang Li Yang Li Hui Han Hui Li |
| author_sort | Kemeng Yang |
| collection | DOAJ |
| description | Boosting large-scale application of two-dimensional ferroelectric materials as memory transistors has stimulated intensive research interest. Layered α-In2Se3 features strikingly ferroelectric properties, which allows unique opportunities for the engineering of functional ferroelectric devices. However, the large-scale and controllable growth of the α-In2Se3 has remained a challenge due to the complexity of indium-selenium growth phase diagram. Here, we report the controllable growth of α-In2Se3 flakes using the developed confined-space modulated chemical vapor deposition (CVD) method. The α-In2Se3 flakes are preferred to be deposited on the inner surfaces of the confined space while the β-In2Se3 flakes are mainly grown on the outer surfaces of the confined space. In addition, the grown α-In2Se3 flake possesses a large size of ∼ 60 μm, uniform thickness of ∼ 2.8 nm and distinct ferroelectric properties. Our findings offer an effective and easily accessible method for controllable growth of two-dimensional layered materials and hold promise for further insight into the fascinating physical properties and potential practical devices applications of van der Waal crystals. |
| first_indexed | 2024-03-12T17:41:45Z |
| format | Article |
| id | doaj.art-7d278a1bf8934811889e78217d9fb541 |
| institution | Directory Open Access Journal |
| issn | 2211-3797 |
| language | English |
| last_indexed | 2024-03-12T17:41:45Z |
| publishDate | 2023-08-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Results in Physics |
| spelling | doaj.art-7d278a1bf8934811889e78217d9fb5412023-08-04T05:47:06ZengElsevierResults in Physics2211-37972023-08-0151106643Controllable growth α-In2Se3 flakes by chemical vapor depositionKemeng Yang0Jiapeng Wang1Lin Wu2Yafei Yan3Xi Tang4Wei Gan5Liang Li6Yang Li7Hui Han8Hui Li9Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, ChinaSchool of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, ChinaInstitute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, ChinaInstitute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, ChinaInstitute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, ChinaInstitute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, ChinaKey Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, ChinaSchool of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, ChinaInstitute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China; Corresponding authors.Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, China; Corresponding authors.Boosting large-scale application of two-dimensional ferroelectric materials as memory transistors has stimulated intensive research interest. Layered α-In2Se3 features strikingly ferroelectric properties, which allows unique opportunities for the engineering of functional ferroelectric devices. However, the large-scale and controllable growth of the α-In2Se3 has remained a challenge due to the complexity of indium-selenium growth phase diagram. Here, we report the controllable growth of α-In2Se3 flakes using the developed confined-space modulated chemical vapor deposition (CVD) method. The α-In2Se3 flakes are preferred to be deposited on the inner surfaces of the confined space while the β-In2Se3 flakes are mainly grown on the outer surfaces of the confined space. In addition, the grown α-In2Se3 flake possesses a large size of ∼ 60 μm, uniform thickness of ∼ 2.8 nm and distinct ferroelectric properties. Our findings offer an effective and easily accessible method for controllable growth of two-dimensional layered materials and hold promise for further insight into the fascinating physical properties and potential practical devices applications of van der Waal crystals.http://www.sciencedirect.com/science/article/pii/S2211379723004369α-In2Se3Confined spaceControllable growthFerroelectricityChemical vapor deposition |
| spellingShingle | Kemeng Yang Jiapeng Wang Lin Wu Yafei Yan Xi Tang Wei Gan Liang Li Yang Li Hui Han Hui Li Controllable growth α-In2Se3 flakes by chemical vapor deposition Results in Physics α-In2Se3 Confined space Controllable growth Ferroelectricity Chemical vapor deposition |
| title | Controllable growth α-In2Se3 flakes by chemical vapor deposition |
| title_full | Controllable growth α-In2Se3 flakes by chemical vapor deposition |
| title_fullStr | Controllable growth α-In2Se3 flakes by chemical vapor deposition |
| title_full_unstemmed | Controllable growth α-In2Se3 flakes by chemical vapor deposition |
| title_short | Controllable growth α-In2Se3 flakes by chemical vapor deposition |
| title_sort | controllable growth α in2se3 flakes by chemical vapor deposition |
| topic | α-In2Se3 Confined space Controllable growth Ferroelectricity Chemical vapor deposition |
| url | http://www.sciencedirect.com/science/article/pii/S2211379723004369 |
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