High-Power Supersymmetric Semiconductor Laser with a Narrow Linewidth
We have designed and fabricated a kind of supersymmetric slotted Fabry–Perot semiconductor laser near 1550 nm to achieve a single-mode, high-power, and narrow-linewidth operation. The structure of the laser is composed of an electrically pumped broad ridge waveguide in the middle to provide optical...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-02-01
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| Series: | Photonics |
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| Online Access: | https://www.mdpi.com/2304-6732/10/3/238 |
| _version_ | 1797609503932284928 |
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| author | Yuanbo Xu Ting Fu Jian Fan Wenzhen Liu Hongwei Qu Mingjin Wang Wanhua Zheng |
| author_facet | Yuanbo Xu Ting Fu Jian Fan Wenzhen Liu Hongwei Qu Mingjin Wang Wanhua Zheng |
| author_sort | Yuanbo Xu |
| collection | DOAJ |
| description | We have designed and fabricated a kind of supersymmetric slotted Fabry–Perot semiconductor laser near 1550 nm to achieve a single-mode, high-power, and narrow-linewidth operation. The structure of the laser is composed of an electrically pumped broad ridge waveguide in the middle to provide optical gain, a group of periodic slots etched near the front facet to suppress the extra longitudinal modes and achieve a narrow linewidth, and a pair of passive superpartner waveguides located on both sides to filter out the high-order lateral modes in the broad waveguide. The device measured under the temperature of 25 °C shows an output power of 113 mW, a single-lobe lateral far-field distribution with the full width at half maximum of 7.8°, a peak wavelength of 1559.7 nm with the side-mode suppression ratio of 48.5 dB, and an intrinsic linewidth of 230 kHz at the bias current of 800 mA. The device is a promising candidate for cost-effective light sources for coherent communication systems and LiDARs. |
| first_indexed | 2024-03-11T06:01:18Z |
| format | Article |
| id | doaj.art-7d35e42845184111894bcbdf6d0f2796 |
| institution | Directory Open Access Journal |
| issn | 2304-6732 |
| language | English |
| last_indexed | 2024-03-11T06:01:18Z |
| publishDate | 2023-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Photonics |
| spelling | doaj.art-7d35e42845184111894bcbdf6d0f27962023-11-17T13:18:13ZengMDPI AGPhotonics2304-67322023-02-0110323810.3390/photonics10030238High-Power Supersymmetric Semiconductor Laser with a Narrow LinewidthYuanbo Xu0Ting Fu1Jian Fan2Wenzhen Liu3Hongwei Qu4Mingjin Wang5Wanhua Zheng6Laboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaLaboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaLaboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaLaboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaLaboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaLaboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaLaboratory of Solid State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaWe have designed and fabricated a kind of supersymmetric slotted Fabry–Perot semiconductor laser near 1550 nm to achieve a single-mode, high-power, and narrow-linewidth operation. The structure of the laser is composed of an electrically pumped broad ridge waveguide in the middle to provide optical gain, a group of periodic slots etched near the front facet to suppress the extra longitudinal modes and achieve a narrow linewidth, and a pair of passive superpartner waveguides located on both sides to filter out the high-order lateral modes in the broad waveguide. The device measured under the temperature of 25 °C shows an output power of 113 mW, a single-lobe lateral far-field distribution with the full width at half maximum of 7.8°, a peak wavelength of 1559.7 nm with the side-mode suppression ratio of 48.5 dB, and an intrinsic linewidth of 230 kHz at the bias current of 800 mA. The device is a promising candidate for cost-effective light sources for coherent communication systems and LiDARs.https://www.mdpi.com/2304-6732/10/3/238supersymmetric semiconductor laserhigh powersingle modenarrow linewidth |
| spellingShingle | Yuanbo Xu Ting Fu Jian Fan Wenzhen Liu Hongwei Qu Mingjin Wang Wanhua Zheng High-Power Supersymmetric Semiconductor Laser with a Narrow Linewidth Photonics supersymmetric semiconductor laser high power single mode narrow linewidth |
| title | High-Power Supersymmetric Semiconductor Laser with a Narrow Linewidth |
| title_full | High-Power Supersymmetric Semiconductor Laser with a Narrow Linewidth |
| title_fullStr | High-Power Supersymmetric Semiconductor Laser with a Narrow Linewidth |
| title_full_unstemmed | High-Power Supersymmetric Semiconductor Laser with a Narrow Linewidth |
| title_short | High-Power Supersymmetric Semiconductor Laser with a Narrow Linewidth |
| title_sort | high power supersymmetric semiconductor laser with a narrow linewidth |
| topic | supersymmetric semiconductor laser high power single mode narrow linewidth |
| url | https://www.mdpi.com/2304-6732/10/3/238 |
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