Thermo-optic epsilon-near-zero effects
Abstract Nonlinear epsilon-near-zero (ENZ) nanodevices featuring vanishing permittivity and CMOS-compatibility are attractive solutions for large-scale-integrated systems-on-chips. Such confined systems with unavoidable heat generation impose critical challenges for semiconductor-based ENZ performan...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2024-01-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-024-45054-z |
| _version_ | 1797276405545828352 |
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| author | Jiaye Wu Marco Clementi Chenxingyu Huang Feng Ye Hongyan Fu Lei Lu Shengdong Zhang Qian Li Camille-Sophie Brès |
| author_facet | Jiaye Wu Marco Clementi Chenxingyu Huang Feng Ye Hongyan Fu Lei Lu Shengdong Zhang Qian Li Camille-Sophie Brès |
| author_sort | Jiaye Wu |
| collection | DOAJ |
| description | Abstract Nonlinear epsilon-near-zero (ENZ) nanodevices featuring vanishing permittivity and CMOS-compatibility are attractive solutions for large-scale-integrated systems-on-chips. Such confined systems with unavoidable heat generation impose critical challenges for semiconductor-based ENZ performances. While their optical properties are temperature-sensitive, there is no systematic analysis on such crucial dependence. Here, we experimentally report the linear and nonlinear thermo-optic ENZ effects in indium tin oxide. We characterize its temperature-dependent optical properties with ENZ frequencies covering the telecommunication O-band, C-band, and 2-μm-band. Depending on the ENZ frequency, it exhibits an unprecedented 70–93-THz-broadband 660–955% enhancement over the conventional thermo-optic effect. The ENZ-induced fast-varying large group velocity dispersion up to 0.03–0.18 fs2nm−1 and its temperature dependence are also observed for the first time. Remarkably, the thermo-optic nonlinearity demonstrates a 1113–2866% enhancement, on par with its reported ENZ-enhanced Kerr nonlinearity. Our work provides references for packaged ENZ-enabled photonic integrated circuit designs, as well as a new platform for nonlinear photonic applications and emulations. |
| first_indexed | 2024-03-07T15:27:50Z |
| format | Article |
| id | doaj.art-7d3996d97f334980a58f2390c9766562 |
| institution | Directory Open Access Journal |
| issn | 2041-1723 |
| language | English |
| last_indexed | 2024-03-07T15:27:50Z |
| publishDate | 2024-01-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Nature Communications |
| spelling | doaj.art-7d3996d97f334980a58f2390c97665622024-03-05T16:35:28ZengNature PortfolioNature Communications2041-17232024-01-011511910.1038/s41467-024-45054-zThermo-optic epsilon-near-zero effectsJiaye Wu0Marco Clementi1Chenxingyu Huang2Feng Ye3Hongyan Fu4Lei Lu5Shengdong Zhang6Qian Li7Camille-Sophie Brès8École Polytechnique Fédérale de Lausanne (EPFL), Photonic Systems Laboratory (PHOSL), STI-IEMÉcole Polytechnique Fédérale de Lausanne (EPFL), Photonic Systems Laboratory (PHOSL), STI-IEMSchool of Electronic and Computer Engineering, Peking UniversitySchool of Electronic and Computer Engineering, Peking UniversityTsinghua Shenzhen International Graduate School, Tsinghua UniversitySchool of Electronic and Computer Engineering, Peking UniversitySchool of Electronic and Computer Engineering, Peking UniversitySchool of Electronic and Computer Engineering, Peking UniversityÉcole Polytechnique Fédérale de Lausanne (EPFL), Photonic Systems Laboratory (PHOSL), STI-IEMAbstract Nonlinear epsilon-near-zero (ENZ) nanodevices featuring vanishing permittivity and CMOS-compatibility are attractive solutions for large-scale-integrated systems-on-chips. Such confined systems with unavoidable heat generation impose critical challenges for semiconductor-based ENZ performances. While their optical properties are temperature-sensitive, there is no systematic analysis on such crucial dependence. Here, we experimentally report the linear and nonlinear thermo-optic ENZ effects in indium tin oxide. We characterize its temperature-dependent optical properties with ENZ frequencies covering the telecommunication O-band, C-band, and 2-μm-band. Depending on the ENZ frequency, it exhibits an unprecedented 70–93-THz-broadband 660–955% enhancement over the conventional thermo-optic effect. The ENZ-induced fast-varying large group velocity dispersion up to 0.03–0.18 fs2nm−1 and its temperature dependence are also observed for the first time. Remarkably, the thermo-optic nonlinearity demonstrates a 1113–2866% enhancement, on par with its reported ENZ-enhanced Kerr nonlinearity. Our work provides references for packaged ENZ-enabled photonic integrated circuit designs, as well as a new platform for nonlinear photonic applications and emulations.https://doi.org/10.1038/s41467-024-45054-z |
| spellingShingle | Jiaye Wu Marco Clementi Chenxingyu Huang Feng Ye Hongyan Fu Lei Lu Shengdong Zhang Qian Li Camille-Sophie Brès Thermo-optic epsilon-near-zero effects Nature Communications |
| title | Thermo-optic epsilon-near-zero effects |
| title_full | Thermo-optic epsilon-near-zero effects |
| title_fullStr | Thermo-optic epsilon-near-zero effects |
| title_full_unstemmed | Thermo-optic epsilon-near-zero effects |
| title_short | Thermo-optic epsilon-near-zero effects |
| title_sort | thermo optic epsilon near zero effects |
| url | https://doi.org/10.1038/s41467-024-45054-z |
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