Electron-Beam Radiation Effects in Multilayer Structures Grown with the Periodical Deposition of Si and CaF<sub>2</sub> on Si(111)
The formation of CaSi<sub>2</sub> films on Si(111) with the molecular-beam epitaxy (MBE) of CaF<sub>2</sub> under fast electron-beam irradiation was investigated. The method of a high-planarity CaSi<sub>2</sub> film synthesis assisted by electron-beam irradiation...
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2023-05-01
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author | Anatoly V. Dvurechenskii Aleksey V. Kacyuba Gennady N. Kamaev Vladimir A. Volodin Natalia P. Stepina Aigul F. Zinovieva Vladimir A. Zinovyev |
author_facet | Anatoly V. Dvurechenskii Aleksey V. Kacyuba Gennady N. Kamaev Vladimir A. Volodin Natalia P. Stepina Aigul F. Zinovieva Vladimir A. Zinovyev |
author_sort | Anatoly V. Dvurechenskii |
collection | DOAJ |
description | The formation of CaSi<sub>2</sub> films on Si(111) with the molecular-beam epitaxy (MBE) of CaF<sub>2</sub> under fast electron-beam irradiation was investigated. The method of a high-planarity CaSi<sub>2</sub> film synthesis assisted by electron-beam irradiation was developed. We combined two approaches to reduce the film roughness: the post-growth electron irradiation and codeposition of additional Si during CaF<sub>2</sub> growth. The application of the solid-phase epitaxy technique at the initial stage of film growth allowed for us to reduce surface roughness down to 1–2 nm. |
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issn | 2673-4605 |
language | English |
last_indexed | 2024-03-10T22:30:05Z |
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series | Materials Proceedings |
spelling | doaj.art-7d44e4293d104be4b25a9b780705fc202023-11-19T11:47:12ZengMDPI AGMaterials Proceedings2673-46052023-05-011416810.3390/IOCN2023-14481Electron-Beam Radiation Effects in Multilayer Structures Grown with the Periodical Deposition of Si and CaF<sub>2</sub> on Si(111)Anatoly V. Dvurechenskii0Aleksey V. Kacyuba1Gennady N. Kamaev2Vladimir A. Volodin3Natalia P. Stepina4Aigul F. Zinovieva5Vladimir A. Zinovyev6Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk, RussiaRzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk, RussiaRzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk, RussiaRzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk, RussiaRzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk, RussiaRzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk, RussiaRzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk, RussiaThe formation of CaSi<sub>2</sub> films on Si(111) with the molecular-beam epitaxy (MBE) of CaF<sub>2</sub> under fast electron-beam irradiation was investigated. The method of a high-planarity CaSi<sub>2</sub> film synthesis assisted by electron-beam irradiation was developed. We combined two approaches to reduce the film roughness: the post-growth electron irradiation and codeposition of additional Si during CaF<sub>2</sub> growth. The application of the solid-phase epitaxy technique at the initial stage of film growth allowed for us to reduce surface roughness down to 1–2 nm.https://www.mdpi.com/2673-4605/14/1/68crystal structurenanostructureselectron-beam radiationmolecular-beam epitaxycalcium compoundssilicon |
spellingShingle | Anatoly V. Dvurechenskii Aleksey V. Kacyuba Gennady N. Kamaev Vladimir A. Volodin Natalia P. Stepina Aigul F. Zinovieva Vladimir A. Zinovyev Electron-Beam Radiation Effects in Multilayer Structures Grown with the Periodical Deposition of Si and CaF<sub>2</sub> on Si(111) Materials Proceedings crystal structure nanostructures electron-beam radiation molecular-beam epitaxy calcium compounds silicon |
title | Electron-Beam Radiation Effects in Multilayer Structures Grown with the Periodical Deposition of Si and CaF<sub>2</sub> on Si(111) |
title_full | Electron-Beam Radiation Effects in Multilayer Structures Grown with the Periodical Deposition of Si and CaF<sub>2</sub> on Si(111) |
title_fullStr | Electron-Beam Radiation Effects in Multilayer Structures Grown with the Periodical Deposition of Si and CaF<sub>2</sub> on Si(111) |
title_full_unstemmed | Electron-Beam Radiation Effects in Multilayer Structures Grown with the Periodical Deposition of Si and CaF<sub>2</sub> on Si(111) |
title_short | Electron-Beam Radiation Effects in Multilayer Structures Grown with the Periodical Deposition of Si and CaF<sub>2</sub> on Si(111) |
title_sort | electron beam radiation effects in multilayer structures grown with the periodical deposition of si and caf sub 2 sub on si 111 |
topic | crystal structure nanostructures electron-beam radiation molecular-beam epitaxy calcium compounds silicon |
url | https://www.mdpi.com/2673-4605/14/1/68 |
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