Ultra-high carrier mobility InSb film by rapid thermal annealing on glass substrate
InSb films were deposited on both mica and glass substrates using thermal evaporation and subjected to FA or RTA. Crystallinity, composition and electrical properties were investigated. High Hall electron mobility as high as 25,000 cm2/(Vs) was obtained with the capped InSb film by keeping the In:Sb...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2016-11-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4967287 |
| _version_ | 1818326802808963072 |
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| author | Charith Jayanada Koswaththage Tatsuya Okada Takashi Noguchi Shinichi Taniguchi Shokichi Yoshitome |
| author_facet | Charith Jayanada Koswaththage Tatsuya Okada Takashi Noguchi Shinichi Taniguchi Shokichi Yoshitome |
| author_sort | Charith Jayanada Koswaththage |
| collection | DOAJ |
| description | InSb films were deposited on both mica and glass substrates using thermal evaporation and subjected to FA or RTA. Crystallinity, composition and electrical properties were investigated. High Hall electron mobility as high as 25,000 cm2/(Vs) was obtained with the capped InSb film by keeping the In:Sb ratio after RTA at 520°C for 30 sec or more without adopting epitaxial growth on glass. |
| first_indexed | 2024-12-13T12:06:10Z |
| format | Article |
| id | doaj.art-7d5f8c1eba2d4b8e90cf9791a3deebfb |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-13T12:06:10Z |
| publishDate | 2016-11-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-7d5f8c1eba2d4b8e90cf9791a3deebfb2022-12-21T23:46:57ZengAIP Publishing LLCAIP Advances2158-32262016-11-01611115303115303-810.1063/1.4967287016611ADVUltra-high carrier mobility InSb film by rapid thermal annealing on glass substrateCharith Jayanada Koswaththage0Tatsuya Okada1Takashi Noguchi2Shinichi Taniguchi3Shokichi Yoshitome4Graduate School of Science and Engineering, University of the Ryukyus, 1 Senbaru, Okinawa 903-0213, JapanGraduate School of Science and Engineering, University of the Ryukyus, 1 Senbaru, Okinawa 903-0213, JapanGraduate School of Science and Engineering, University of the Ryukyus, 1 Senbaru, Okinawa 903-0213, Japane-tec Inc., Sadowara, Miyazaki 880-0303, Japane-tec Inc., Sadowara, Miyazaki 880-0303, JapanInSb films were deposited on both mica and glass substrates using thermal evaporation and subjected to FA or RTA. Crystallinity, composition and electrical properties were investigated. High Hall electron mobility as high as 25,000 cm2/(Vs) was obtained with the capped InSb film by keeping the In:Sb ratio after RTA at 520°C for 30 sec or more without adopting epitaxial growth on glass.http://dx.doi.org/10.1063/1.4967287 |
| spellingShingle | Charith Jayanada Koswaththage Tatsuya Okada Takashi Noguchi Shinichi Taniguchi Shokichi Yoshitome Ultra-high carrier mobility InSb film by rapid thermal annealing on glass substrate AIP Advances |
| title | Ultra-high carrier mobility InSb film by rapid thermal annealing on glass substrate |
| title_full | Ultra-high carrier mobility InSb film by rapid thermal annealing on glass substrate |
| title_fullStr | Ultra-high carrier mobility InSb film by rapid thermal annealing on glass substrate |
| title_full_unstemmed | Ultra-high carrier mobility InSb film by rapid thermal annealing on glass substrate |
| title_short | Ultra-high carrier mobility InSb film by rapid thermal annealing on glass substrate |
| title_sort | ultra high carrier mobility insb film by rapid thermal annealing on glass substrate |
| url | http://dx.doi.org/10.1063/1.4967287 |
| work_keys_str_mv | AT charithjayanadakoswaththage ultrahighcarriermobilityinsbfilmbyrapidthermalannealingonglasssubstrate AT tatsuyaokada ultrahighcarriermobilityinsbfilmbyrapidthermalannealingonglasssubstrate AT takashinoguchi ultrahighcarriermobilityinsbfilmbyrapidthermalannealingonglasssubstrate AT shinichitaniguchi ultrahighcarriermobilityinsbfilmbyrapidthermalannealingonglasssubstrate AT shokichiyoshitome ultrahighcarriermobilityinsbfilmbyrapidthermalannealingonglasssubstrate |