Charge-transport properties of as-grown Cd1-xZnxTe1-ySey by the traveling heater method

In this article, we report on the charge-transport characteristics of a new quaternary material Cd1-xZnxTe1-ySey (CZTS) grown by the Traveling Heater Method (THM). The as-grown CZTS material was found to possess fewer Te inclusions than CZT†. Moreover, high resistivity of ∼1-2x1010 ohm-cm was achiev...

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Main Authors: U. N. Roy, G. S. Camarda, Y. Cui, R. Gul, G. Yang, R. B. James
Format: Article
Language:English
Published: AIP Publishing LLC 2018-12-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5064373
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author U. N. Roy
G. S. Camarda
Y. Cui
R. Gul
G. Yang
R. B. James
author_facet U. N. Roy
G. S. Camarda
Y. Cui
R. Gul
G. Yang
R. B. James
author_sort U. N. Roy
collection DOAJ
description In this article, we report on the charge-transport characteristics of a new quaternary material Cd1-xZnxTe1-ySey (CZTS) grown by the Traveling Heater Method (THM). The as-grown CZTS material was found to possess fewer Te inclusions than CZT†. Moreover, high resistivity of ∼1-2x1010 ohm-cm was achieved, meeting the requirements of most gamma-ray detector applications. The mobility-lifetime product for electrons [(μτ)e] was measured to be ∼4x10-3 cm2/V. The energy resolution for the quasi-hemispherical detector fabricated from the as-grown CZTS ingot obtained was ∼2.8% (FWHM) at 662 keV.
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spelling doaj.art-7d8f472504074da28e28760352db18872022-12-22T00:54:36ZengAIP Publishing LLCAIP Advances2158-32262018-12-01812125015125015-510.1063/1.5064373069812ADVCharge-transport properties of as-grown Cd1-xZnxTe1-ySey by the traveling heater methodU. N. Roy0G. S. Camarda1Y. Cui2R. Gul3G. Yang4R. B. James5Brookhaven National Laboratory, Upton, New York 11973, USABrookhaven National Laboratory, Upton, New York 11973, USABrookhaven National Laboratory, Upton, New York 11973, USABrookhaven National Laboratory, Upton, New York 11973, USABrookhaven National Laboratory, Upton, New York 11973, USABrookhaven National Laboratory, Upton, New York 11973, USAIn this article, we report on the charge-transport characteristics of a new quaternary material Cd1-xZnxTe1-ySey (CZTS) grown by the Traveling Heater Method (THM). The as-grown CZTS material was found to possess fewer Te inclusions than CZT†. Moreover, high resistivity of ∼1-2x1010 ohm-cm was achieved, meeting the requirements of most gamma-ray detector applications. The mobility-lifetime product for electrons [(μτ)e] was measured to be ∼4x10-3 cm2/V. The energy resolution for the quasi-hemispherical detector fabricated from the as-grown CZTS ingot obtained was ∼2.8% (FWHM) at 662 keV.http://dx.doi.org/10.1063/1.5064373
spellingShingle U. N. Roy
G. S. Camarda
Y. Cui
R. Gul
G. Yang
R. B. James
Charge-transport properties of as-grown Cd1-xZnxTe1-ySey by the traveling heater method
AIP Advances
title Charge-transport properties of as-grown Cd1-xZnxTe1-ySey by the traveling heater method
title_full Charge-transport properties of as-grown Cd1-xZnxTe1-ySey by the traveling heater method
title_fullStr Charge-transport properties of as-grown Cd1-xZnxTe1-ySey by the traveling heater method
title_full_unstemmed Charge-transport properties of as-grown Cd1-xZnxTe1-ySey by the traveling heater method
title_short Charge-transport properties of as-grown Cd1-xZnxTe1-ySey by the traveling heater method
title_sort charge transport properties of as grown cd1 xznxte1 ysey by the traveling heater method
url http://dx.doi.org/10.1063/1.5064373
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