High Performance Flip-Structure Enhancement-Mode HEMT with Face-to-Face Double Gates
Abstract A novel double gates flip-structure enhancement-mode (E-mode) high electron mobility transistor with step field plate (DFF HEMT) is proposed. It features face-to-face double gates, including a top trench MIS gate with a step field plate and a bottom planar MIS gate, which is shorted togethe...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2022-08-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | https://doi.org/10.1186/s11671-022-03713-4 |
| _version_ | 1797758032912842752 |
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| author | Siyu Deng Jie Wei Cheng Zhang Dezun Liao Tao Sun Kemeng Yang Lufan Xi Bo Zhang Xiaorong Luo |
| author_facet | Siyu Deng Jie Wei Cheng Zhang Dezun Liao Tao Sun Kemeng Yang Lufan Xi Bo Zhang Xiaorong Luo |
| author_sort | Siyu Deng |
| collection | DOAJ |
| description | Abstract A novel double gates flip-structure enhancement-mode (E-mode) high electron mobility transistor with step field plate (DFF HEMT) is proposed. It features face-to-face double gates, including a top trench MIS gate with a step field plate and a bottom planar MIS gate, which is shorted together. In the on-state, the double gates not only can restore the 2DEG by the higher electric potential, but also can form the electron accumulation layers, and thus increase the saturation output current and reduce the on-resistance. The face-to-face double gates together deplete the 2DEG by using the work function difference to realize E-mode, instead of by etching the AlGaN layer under the gate for the conventional MIS gate E-mode HEMT. The double-gate structure not only avoids etch damage, but also maintains both high threshold voltage and low on-resistance. Meanwhile, the step gate field plate modulates E-field distribution to increase the BV. In order to easily fabricate, the trench gate with step field plate must be located on the top of device, forming the flip-structure. The flip-structure is also beneficial to decrease the leakage current in the substrate. The simulated V th, BV and I d of the DFF HEMT are 0.8 V, 465 V and 494 mA/mm, respectively. The FOM of the DFF HEMT is 79.8% and 444.2% higher than those of the conventional MIS-FP HEMT and MIS HEMT. |
| first_indexed | 2024-03-12T18:23:58Z |
| format | Article |
| id | doaj.art-7d93a4a6e7ac410f8ed7f07ab9944224 |
| institution | Directory Open Access Journal |
| issn | 1556-276X |
| language | English |
| last_indexed | 2024-03-12T18:23:58Z |
| publishDate | 2022-08-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-7d93a4a6e7ac410f8ed7f07ab99442242023-08-02T08:37:35ZengSpringerOpenNanoscale Research Letters1556-276X2022-08-011711910.1186/s11671-022-03713-4High Performance Flip-Structure Enhancement-Mode HEMT with Face-to-Face Double GatesSiyu Deng0Jie Wei1Cheng Zhang2Dezun Liao3Tao Sun4Kemeng Yang5Lufan Xi6Bo Zhang7Xiaorong Luo8The State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of ChinaThe State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of ChinaThe State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of ChinaThe State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of ChinaThe State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of ChinaThe State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of ChinaThe State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of ChinaThe State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of ChinaThe State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of ChinaAbstract A novel double gates flip-structure enhancement-mode (E-mode) high electron mobility transistor with step field plate (DFF HEMT) is proposed. It features face-to-face double gates, including a top trench MIS gate with a step field plate and a bottom planar MIS gate, which is shorted together. In the on-state, the double gates not only can restore the 2DEG by the higher electric potential, but also can form the electron accumulation layers, and thus increase the saturation output current and reduce the on-resistance. The face-to-face double gates together deplete the 2DEG by using the work function difference to realize E-mode, instead of by etching the AlGaN layer under the gate for the conventional MIS gate E-mode HEMT. The double-gate structure not only avoids etch damage, but also maintains both high threshold voltage and low on-resistance. Meanwhile, the step gate field plate modulates E-field distribution to increase the BV. In order to easily fabricate, the trench gate with step field plate must be located on the top of device, forming the flip-structure. The flip-structure is also beneficial to decrease the leakage current in the substrate. The simulated V th, BV and I d of the DFF HEMT are 0.8 V, 465 V and 494 mA/mm, respectively. The FOM of the DFF HEMT is 79.8% and 444.2% higher than those of the conventional MIS-FP HEMT and MIS HEMT.https://doi.org/10.1186/s11671-022-03713-4AlGaN/GaN HEMTEnhancement-modeDouble gatesFlip-structureBreakdown voltage |
| spellingShingle | Siyu Deng Jie Wei Cheng Zhang Dezun Liao Tao Sun Kemeng Yang Lufan Xi Bo Zhang Xiaorong Luo High Performance Flip-Structure Enhancement-Mode HEMT with Face-to-Face Double Gates Nanoscale Research Letters AlGaN/GaN HEMT Enhancement-mode Double gates Flip-structure Breakdown voltage |
| title | High Performance Flip-Structure Enhancement-Mode HEMT with Face-to-Face Double Gates |
| title_full | High Performance Flip-Structure Enhancement-Mode HEMT with Face-to-Face Double Gates |
| title_fullStr | High Performance Flip-Structure Enhancement-Mode HEMT with Face-to-Face Double Gates |
| title_full_unstemmed | High Performance Flip-Structure Enhancement-Mode HEMT with Face-to-Face Double Gates |
| title_short | High Performance Flip-Structure Enhancement-Mode HEMT with Face-to-Face Double Gates |
| title_sort | high performance flip structure enhancement mode hemt with face to face double gates |
| topic | AlGaN/GaN HEMT Enhancement-mode Double gates Flip-structure Breakdown voltage |
| url | https://doi.org/10.1186/s11671-022-03713-4 |
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