High Performance Flip-Structure Enhancement-Mode HEMT with Face-to-Face Double Gates

High Performance Flip-Structure Enhancement-Mode HEMT with Face-to-Face Double Gates

Abstract A novel double gates flip-structure enhancement-mode (E-mode) high electron mobility transistor with step field plate (DFF HEMT) is proposed. It features face-to-face double gates, including a top trench MIS gate with a step field plate and a bottom planar MIS gate, which is shorted togethe...

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Bibliographic Details
Main Authors: Siyu Deng, Jie Wei, Cheng Zhang, Dezun Liao, Tao Sun, Kemeng Yang, Lufan Xi, Bo Zhang, Xiaorong Luo
Format: Article
Language:English
Published: SpringerOpen 2022-08-01
Series:Nanoscale Research Letters
Subjects:
AlGaN/GaN HEMT
Enhancement-mode
Double gates
Flip-structure
Breakdown voltage
Online Access:https://doi.org/10.1186/s11671-022-03713-4

Internet

https://doi.org/10.1186/s11671-022-03713-4

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