High Performance Predictable Quantum Efficient Detector Based on Induced-Junction Photodiodes Passivated with SiO<sub>2</sub>/SiN<sub>x</sub>

High Performance Predictable Quantum Efficient Detector Based on Induced-Junction Photodiodes Passivated with SiO<sub>2</sub>/SiN<sub>x</sub>

We performed a systematic study involving simulation and experimental techniques to develop induced-junction silicon photodetectors passivated with thermally grown SiO<sub>2</sub> and plasma-enhanced chemical vapor deposited (PECVD) SiN<sub>x</sub> thin films that show a reco...

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Bibliographic Details
Main Authors: Ozhan Koybasi, Ørnulf Nordseth, Trinh Tran, Marco Povoli, Mauro Rajteri, Carlo Pepe, Eivind Bardalen, Farshid Manoocheri, Anand Summanwar, Mikhail Korpusenko, Michael N. Getz, Per Ohlckers, Erkki Ikonen, Jarle Gran
Format: Article
Language:English
Published: MDPI AG 2021-11-01
Series:Sensors
Subjects:
silicon photodetector
inversion layer photodiode
induced-junction
surface passivation
PECVD silicon nitride
radiometry
Online Access:https://www.mdpi.com/1424-8220/21/23/7807

Internet

https://www.mdpi.com/1424-8220/21/23/7807

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