Multilevel Resistive Switching Memory Based on a CH3NH3PbI 3−x Cl x Film with Potassium Chloride Additives
Abstract High-quality CH3NH3PbI 3−x Cl x (MAPIC) films were prepared using potassium chloride (KCl) as an additive on indium tin oxide (ITO)-coated glass substrates using a simple one-step and low-temperature solution reaction. The Au/KCl-MAPIC/ITO/glass devices exhibited obvious multilevel resistiv...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2020-06-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://link.springer.com/article/10.1186/s11671-020-03356-3 |
| _version_ | 1797710842762887168 |
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| author | Fengzhen Lv Kang Ling Tingting Zhong Fuchi Liu Xiaoguang Liang Changming Zhu Jun Liu Wenjie Kong |
| author_facet | Fengzhen Lv Kang Ling Tingting Zhong Fuchi Liu Xiaoguang Liang Changming Zhu Jun Liu Wenjie Kong |
| author_sort | Fengzhen Lv |
| collection | DOAJ |
| description | Abstract High-quality CH3NH3PbI 3−x Cl x (MAPIC) films were prepared using potassium chloride (KCl) as an additive on indium tin oxide (ITO)-coated glass substrates using a simple one-step and low-temperature solution reaction. The Au/KCl-MAPIC/ITO/glass devices exhibited obvious multilevel resistive switching behavior, moderate endurance, and good retention performance. Electrical conduction analysis indicated that the resistive switching behavior of the KCl-doped MAPIC films was primarily attributed to the trap-controlled space-charge-limited current conduction that was caused by the iodine vacancies in the films. Moreover, the modulations of the barrier in the Au/KCl-MAPIC interface under bias voltages were thought to be responsible for the resistive switching in the carrier injection trapping/detrapping process. |
| first_indexed | 2024-03-12T06:58:09Z |
| format | Article |
| id | doaj.art-7da9c71051c943e08c801f3cdf6b9c5a |
| institution | Directory Open Access Journal |
| issn | 1556-276X |
| language | English |
| last_indexed | 2024-03-12T06:58:09Z |
| publishDate | 2020-06-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-7da9c71051c943e08c801f3cdf6b9c5a2023-09-02T23:56:23ZengSpringerOpenNanoscale Research Letters1556-276X2020-06-011511810.1186/s11671-020-03356-3Multilevel Resistive Switching Memory Based on a CH3NH3PbI 3−x Cl x Film with Potassium Chloride AdditivesFengzhen Lv0Kang Ling1Tingting Zhong2Fuchi Liu3Xiaoguang Liang4Changming Zhu5Jun Liu6Wenjie Kong7College of Physics and Technology, Guangxi Normal UniversityCollege of Physics and Technology, Guangxi Normal UniversityCollege of Physics and Technology, Guangxi Normal UniversityCollege of Physics and Technology, Guangxi Normal UniversityCollege of Physics and Technology, Guangxi Normal UniversityCollege of Physics and Technology, Guangxi Normal UniversityCollege of Physics and Technology, Guangxi Normal UniversityCollege of Physics and Technology, Guangxi Normal UniversityAbstract High-quality CH3NH3PbI 3−x Cl x (MAPIC) films were prepared using potassium chloride (KCl) as an additive on indium tin oxide (ITO)-coated glass substrates using a simple one-step and low-temperature solution reaction. The Au/KCl-MAPIC/ITO/glass devices exhibited obvious multilevel resistive switching behavior, moderate endurance, and good retention performance. Electrical conduction analysis indicated that the resistive switching behavior of the KCl-doped MAPIC films was primarily attributed to the trap-controlled space-charge-limited current conduction that was caused by the iodine vacancies in the films. Moreover, the modulations of the barrier in the Au/KCl-MAPIC interface under bias voltages were thought to be responsible for the resistive switching in the carrier injection trapping/detrapping process.http://link.springer.com/article/10.1186/s11671-020-03356-3Tri-state resistive switching behaviorKCl-doped MAPIC filmsIodine vacanciesTrap-controlled SCLC conduction mechanism |
| spellingShingle | Fengzhen Lv Kang Ling Tingting Zhong Fuchi Liu Xiaoguang Liang Changming Zhu Jun Liu Wenjie Kong Multilevel Resistive Switching Memory Based on a CH3NH3PbI 3−x Cl x Film with Potassium Chloride Additives Nanoscale Research Letters Tri-state resistive switching behavior KCl-doped MAPIC films Iodine vacancies Trap-controlled SCLC conduction mechanism |
| title | Multilevel Resistive Switching Memory Based on a CH3NH3PbI 3−x Cl x Film with Potassium Chloride Additives |
| title_full | Multilevel Resistive Switching Memory Based on a CH3NH3PbI 3−x Cl x Film with Potassium Chloride Additives |
| title_fullStr | Multilevel Resistive Switching Memory Based on a CH3NH3PbI 3−x Cl x Film with Potassium Chloride Additives |
| title_full_unstemmed | Multilevel Resistive Switching Memory Based on a CH3NH3PbI 3−x Cl x Film with Potassium Chloride Additives |
| title_short | Multilevel Resistive Switching Memory Based on a CH3NH3PbI 3−x Cl x Film with Potassium Chloride Additives |
| title_sort | multilevel resistive switching memory based on a ch3nh3pbi 3 x cl x film with potassium chloride additives |
| topic | Tri-state resistive switching behavior KCl-doped MAPIC films Iodine vacancies Trap-controlled SCLC conduction mechanism |
| url | http://link.springer.com/article/10.1186/s11671-020-03356-3 |
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